以砷化鎵為基材在1060nm波段側向接面超螢光白光二極體

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陳岳毅(Yueh-Yi Chen) 查詢紙本館藏

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電機工程學系

論文名稱

以砷化鎵為基材在1060nm波段側向接面超螢光白光二極體
(GaAs-based transverse current injection light emitting diodes at the wavelength 1060nm)

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摘要(中)

在本論文裡，我們比較了側向p-n接面與一般垂直p-n接面元件之特性，一般的垂直接面發光二極體，在多重量子井中會有載子分佈不均勻的問題，可藉由側向接面元件消除，側向接面元件展現了穩定且平坦的光譜頻寬，在大偏壓電流操作下，3-dB頻寬為165nm，中心波長在1060nm附近，其3-dB頻寬對擴散深度及加入的偏壓電流不敏感，且頻寬有飽和之現象，此說明載子均勻分佈之重要性。

摘要(英)

In this thesis, we compared performance of our demonstrated transverse p-n junction devices to those traditional vertical ones. The nonuniform carrier distribution problem that occurs in the multiple quantum wells (MQWs) of traditional vertical p-n junction LEDs can be totally eliminated by introducing a transverse p-n junction with MQWs combining with different emission wavelengths. These devices exhibit stable, flattened, and invariant broadband optical spectrum with maximum 3-dB bandwidth of 165nm around the wavelength of 1.06μm under a large bias current operation. The bandwidths of devices are not sensitive to diffusion depth and bias currents, revealing the improvement of uniform distribution of carriers.

關鍵字(中)

★ 側向接面
★ 超螢光發光二極體
★ 砷化鎵

關鍵字(英)

★ superluminescent diode
★ GaAs
★ transverse junction

論文目次

摘要 i
Abstract ii
誌謝 iii
目錄 iv
圖目錄 v
表目錄 vii
第一章簡介 1
1-1 光學同調斷層攝影(Optical Coherence Tomography，OCT) 3
1-2 光學同調斷層攝影光源波長 5
第二章理論 7
2-1 超螢光二極體基本考量 8
2-2 使用側向接面之目的 11
2-3 量子井設計 15
第三章元件製程 18
第四章量測結果與分析 25
4-1 不同擴散時間的發光二極體特性 26
4-2 側向接面雷射 31
第五章結論 35
參考文獻 36

參考文獻

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指導教授

許晉瑋(Jin-Wei Shi)

審核日期

2007-7-24

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