高速, 低耗能, 單模態 850nm波段面射型雷射在光連結上應用

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陳建成(Chien-Cheng Chen) 查詢紙本館藏

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論文名稱

高速, 低耗能, 單模態 850nm波段面射型雷射在光連結上應用
(High-Speed, Low-Power-Consumption, and Single-Mode 850nmVertical-Cavity Surface-Emitting Lasersfor The Application of Optical Interconnect)

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摘要(中)

我們製作一個高效能鋅擴散850nm波段的單模態面射型雷射。其元件擁有較低的臨限電流0.5mA、較高的微分量子效率（80%）及電流調制效率為8.2 GHz/mA1/2，從低的臨限電流至高的飽和電流下元件皆維持穩定的單模態操作，而最大的輸出光功率達到7.3mW。其元件在一個小的操作電流(1.8mA)及較小信號偏壓（0.5Vp-p）就可以使10 Gb/s的眼圖打開及其元件的傳輸量比功率消耗率為6.5 Gps/mW。
然而此高功率單模面射型雷射依然存在空間電洞不足問題，此效應使元件之頻寬在低頻時即有滑落之現象；欲改善此問題，我們製作了三種具有不同鋅擴散深度的元件，進而比較其直流及高頻特性，實驗後發現擴散深度介於中間之元件，可以改善先前所提及之低頻滑落現象，而其激發之光點可在空間中保持單模態操作，與多模態操作之元件相比有一個較好的對準誤差，因此此元件在具有多模態雷射之高頻特性下，亦同時擁有單模態雷射之高對準誤差，同時藉由通過10 Gb/s的眼圖，更證明此最佳化元件可達到高速、低消耗功率的目標。

摘要(英)

We demonstrate a high-performance Zn-diffusion single-mode 850nm vertical-cavity surface-emitting laser, which has a low threshold current （0.5 mA）, high differential efficiency（80%）, high modulation current efficiency （8.2 GHz/mA1/2）, and can sustain the single fundamental-mode output with a maximum output power of 7.3 mW under the full range of bias currents. With this device we can achieve 10 Gb/s eye-opening at a low bias current （1.8 mA） and a peak-to-peak driving-voltage of 0.5 V, which corresponds to a very high data-rate/power-dissipation ratio of 6.5 Gps/mW.
However, this device still suffers form the low-frequency roll-off caused by the spatial hole burning (SHB) effect, and degrades the speed performance. In order to solve the mentioned problem, we fabricated the devices with three different depth of Zn-diffusion to compare their DC and RF characteristics. According to our experiment results, we can find that minimization of low-frequency roll-off has been observed in the device with middle depth of Zn-diffusion, and the lasing spot can still maintain spatial single-mode which the alignment tolerance is larger then the multimode device. Therefore, the demonstrated device can have high speed performance of multimode device and the large alignment tolerance of single mode device at the same time. In light of the clearly opened eye-pattern at 10 Gb/s operating speed, we can further evidence that our device can achieve high-speed, low power-dissipation performance.

關鍵字(中)

★ 面射型雷射
★ 高速
★ 半導體雷射

關鍵字(英)

★ High speed
★ VCSEL
★ semiconductor laser

論文目次

摘要.....................................................i
Abstract.................................................ii
致謝....................................................iii
目錄.....................................................v
圖目錄..................................................vii
表目錄...................................................xi
第一章序論..............................................1
1-1 簡介.........................................1
1-2 面射型雷射（VCSEL）簡介......................3
1-3 高速單模態面射型雷射製作.....................4
第二章理論..............................................7
2-1 VCSEL的磊晶結構..............................7
2-2 鋅擴散於DBR..................................9
2-3 VCSEL的選擇性水氧化理論.....................11
2-4 發散角......................................13
第三章理論.............................................16
3-1 鋅擴散製程..................................16
3-2 水氣氧化....................................18
3-3 製作電極以及金屬回火(Annealing).............19
3-4平坦化及製作金屬接線.........................22
第四章量測結果與討論....................................24
4.1量測系統.....................................24
4.1.1. 電流對電壓(I-V)的量測系統................24
4.1.2. 光功率對電流(L-I)之量測系統..............24
4.1.3. 遠場(Far field)之量測系統................25
4.1.4. 近場(Near field)投影之量測系統...........25
4.1.5. 頻譜(Spectrum) 之量測系統................26
4.1.6. 頻寬(Bandwidth)之量測系統................26
4.1.7. 眼圖(Eye pattern)之量測系統..............27
4.2 單模態型VCSEL量測結果.......................28
4.2.1. 電流對電壓（I-V）曲線....................28
4.2.2. 輸出光功率對電流（L-I）曲線..............28
4.2.3 近場（Near field）投影....................30
4.2.4 遠場（Far field）發散角...................30
4.2.5 光頻譜(Optical spectra)圖.................31
4.2.6. 頻寬(Bandwidth) 和D係數（D-factor）......32
4.2.7. S11、S21參數模擬.........................35
4.2.8. K參數(K parameter).......................37
4.2.9. 眼圖(eye pattern)量測....................39
4.3 VCSEL最佳化擴散深度分析.....................40
4.3.1. VCSEL元件結構圖..........................40
4.3.2. 電流對電壓曲線和光功率對電流曲線.........41
4.3.3. 近場投影和光頻譜圖.......................43
4.3.4. 遠場(Far field)發散角....................46
4.3.5. 調準限度(Alignment tolerance）...........48
4.3.6. 頻寬(Bandwidth)..........................49
4.3.7. D係數（D-factor）K參數(K-parameter)......51
4.3.8. 眼圖（eye pattern）比較..................52
第五章結論與未來研究....................................54
參考資料.................................................56

參考文獻

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指導教授

許晉瑋(Jin-Wei Shi)

審核日期

2008-7-22

推文