異質接面雙極性電晶體之特性探討與溫度補償電路設計

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姓名

張程毓(Chen-Yu Chang) 查詢紙本館藏

畢業系所

電機工程學系

論文名稱

異質接面雙極性電晶體之特性探討與溫度補償電路設計
(A Study on Characteristics of Heterojunction Bipolar Transistor and design circuit for temperature compensation)

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摘要(中)

因為異質接面電晶體 (HBT) 擁有高電流處理能力、高截止頻率與高最大震盪頻率，故其被廣泛地應用在微波電路上。其中，對設計功率放大器者而言，最大的阻礙即是自發熱效應的問題，而自發熱效應將減低元件之特性，嚴重的話將產生熱跑脫現象(thermal runaway)，進而將元件燒毀。通常使用射極分佈電指的結構和外接壓艙電阻以穩定熱效應對元件的影響。所以本報告將針對兩種方向去加以討論和分析: (1) 在相同的射極總面積與壓艙電阻下，不同的射極長度對熱的影響。(2) 在相同的異質接面雙極性電晶體的大小下，不同的壓艙電阻值對熱的影響。
本論文中，亦利用一套簡單萃取最佳化壓艙電阻之理論與方法，並成功的利用此最佳化壓艙電阻值模擬出最佳化後的I-V曲線圖。
此外，本論文中亦提出一溫度補償電路，其應用在電路上將使得其功率元件特性變好。而此電路當模擬在操作環境溫度變化範圍在-450C~850C時亦或是偏壓電路供給電壓變動範圍在2.6V~3.2V，其模擬之結果皆可達到增益固定之功能。

摘要(英)

Because Heterojunction Bipolar Transistors has the characteristics of high current handling capability, high cutoff frequency and high maximum frequency for oscillation, HBT have been widely accepted by the microwave engineering as an excellent candidate for many high-frequencies applications. A major obstacle for the employment of HBT for high power and high frequency applications is self-heating effect, which is even more serious with the downscaling of the chip .The self-heating effects degenerate the electrical characteristics of transistors leading to DC bias shifting and the thermal runaway. To avoid the thermal runaway phenomenon, we usually use multi-finger or ballastinging resistor. We want to discuss in view of two kinds of sides: (1) same device emitter area 、ballastinging resistor and different emitter length to thermal stable (2) same device area and different ballastinging resistor to thermal stable.
We induce the ballastinginging resistor in this thesis. The optimized ballastinginging resistor which built in the HBT in series can eliminate the thermal instability and improve RF performance.
Therefore, we design the temperature-compensation bias circuits to further improve the performance with a wide temperature range operating from -450C to 850C. Additionally, the designed circuits also can achieve the low variations for RF characteristic under the bias voltage ranging from 2.6V to 3.2V.

關鍵字(中)

★ 異質接面雙極性電晶體
★ 溫度補償

關鍵字(英)

★ Heterojunction Bipolar Transistor
★ Temperature compensation

論文目次

第一章導論......................................................................................... 1
1-1 研究動機............................................................................ 1
1-2 論文架構............................................................................ 2
第二章射極長度、壓艙電阻(Ballastinging Resistor)對異質接面電晶體之研究與探討.................................................................5
2-1 簡介...................................................................................... 5
2-2 異質接面電晶體之射極長度對熱穩定的探討.................. 6
2-2-1 簡介………………………………………….……6
2-2-2 元件規格…………………………………….……6
2-2-3 直流量測與分析…………………………….……7
2-2-4 微波功率量測與探討………………..…….……10
2-2-5 元件之溫度特性...................................................12
2-2-5-1 熱電阻萃取..........................................12
2-2-5-2 溫度對直流特性分析..........................13
2-2-5-3 溫度對頻率響應分析..........................14
2-2-5-4 溫度對功率分析..................................15
2-2-6 結論………..…………...….…….……………...18
2-3 異質接面電晶體之壓艙電阻對熱穩定的探討...............18
2-3-1 元件規格...........................................................18
2-3-2 直流量測與分析...............................................19
2-3-3 微波功率量測與探討.......................................22
2-3-4 元件之溫度特性...............................................25
2-3-4-1 熱電阻萃取.........................................25
2-3-4-2 溫度對直流特性分析.........................29
2-3-4-3 溫度對頻率響應分析.........................29
2-3-4-4 溫度對功率分析.................................31
2-4 壓艙電阻最佳化...............................................................32
2-4-1 壓艙電阻最佳化之理論...................................33
2-4-2 計算壓艙電阻最佳化之參數意義...................34
2-4-3 壓艙電阻最佳化值...........................................35
2-5 結論..................................................................................35
第三章異質接面電晶體VBIC模型建立與最佳化壓艙電阻模擬.36
3-1 簡介..................................................................................36
3-2 異質接面電晶體小訊號模型建立..................................36
3-2-1 寄生電感和接觸電阻之萃取...........................38
3-2-2 寄生電容之萃取...............................................41
3-2-3 內部參數之萃取...............................................42
3-2-4 小訊號模擬結果...............................................51
3-3 VBIC 模型建立...............................................................52
3-3-1 VBIC模型介紹................................................ 52
3-3-2 使用儀器...........................................................55
3-3-3 寄生電阻量測與萃取.......................................55
3-3-3-1 射極寄生電阻之萃取....................56
3-3-3-2 集極寄生電阻之萃取....................57
3-3-3-3 基極寄生電阻之萃取....................58
3-3-4 順向與逆向 Gummel plot 參數萃取..............59
3-3-5 類飽和效應 ( quasi-saturation ) 萃取……….65
3-3-6 自我加熱效應 ( self-heating ) 萃取................67
3-3-7 接面電容萃取...................................................68
3-3-8 傳輸時間參數萃取...........................................70
3-3-9 微波功率特性之驗證.......................................72
3-4 最佳化壓艙電阻模擬.......................................................74
3-5 結論...................................................................................84
第四章溫度補償電路設計..................................................................85
4-1 簡介..................................................................................85
4-2 偏壓原理..........................................................................86
4-3 溫度補償電路一..............................................................87
4-3-1 偏壓電路一之架構...........................................87
4-3-2 偏壓電路一之模擬結果...................................89
4-3-3 偏壓電路一之結果與討論...............................99
4-4 溫度補償電路二..............................................................99
4-4-1 偏壓電路二之架構...........................................99
4-4-2 偏壓電路二之模擬結果.................................100
4-4-3 偏壓電路二之結果與討論.............................110
第五章結論......................................................................................111
參考文獻................................................................................................113

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指導教授

詹益仁

審核日期

2008-7-16

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