參考文獻 |
[1]. P. Smulders, “Exploiting the 60 GHz Band for Local Wireless Multimedia Access: Prospects and Future directions”, IEEE Commun. Mag., Vol. 2, No. 1, pp. 140-147, Jan. 2002.
[2]. Federal Communications Commission, “Amendment of Parts 2, 15 and 97 of the Commission's Rules to Permit Use of Radio Frequencies Above 40 GHz for New Radio Applications”, FCC 95-499, ET Docket No. 94-124, RM-8308, Dec. 15, 1995.
[3]. H. Zarei and D. Allstot, “A low-loss phase shifter in 180 nm CMOS formultiple-antenna receivers,” in IEEE ISSCC Dig. Tech. Paper, Feb. 2004, pp. 392–393.
[4]. D. Kang, H. Lee, C. Kim, and S. Hong, “Ku-band MMIC phase shifter using a parallel resonator with 0.18- ?m CMOS technology,” IEEE Trans. Microw. Theory Tech., vol. 54, no. 1, pp. 294–301, Jan. 2006.
[5]. P. S. Wu, H. Y. Chang, M. D. Tsai, T. W. Huang, and H. Wang, “New miniature 15–20-GHz continuous-phase/amplitude control MMICs using 0.18- m CMOS technology,” IEEE Trans. Microw. Theory Tech., vol. 54, no. 1, pp. 10–19, Jan. 2006.
[6]. M. A. Morton, J. P. Comeau, J. D. Cressler, M. Mitchell, and J. Papapolymerou, “Sources of phase error and design considerations for silicon-based monolithic high-pass/low-pass microwave phase shifters,” IEEE Trans. Microw. Theory Tech., vol. 54, no. 12, pp. 4032–4040, Dec. 2006.
[7]. A. Natarajan, B. Floyd and A. Hajimili, “A bidirectional RF-combining 60GHz phased-array front-end,” in IEEE ISSCC Dig. Tech. Paper, Feb. 2007, pp. 202-203.
[8]. H. Zarei, S. Kodama, C. T. Charles, and D. J. Allstot, “Reflective-type phase shifters for multiple-antenna transceivers,” IEEE Trans. Circuits Syst. I, Reg. Papers, vol. 54, no. 8, pp. 1647–1656, Aug. 2007.
[9]. Jen-Chieh Wu, Ting-Yueh Chin, Sheng-Fuh Chang, and Chia-Chan Chang,“2.45-GHz CMOS Reflection-Type Phase-Shifter MMICs With Minimal Loss Variation Over Quadrants of Phase-Shift Range” Microwave Theory and Techniques, IEEE Transactions on Volume 56, , Oct. 2008 pp. 2180 - 2189
[10]. F. Ellinger, R. Vogt, and W. Bachtold, “Compact reflective-type phase-shifter MMIC for C-band using a lumped-element coupler,” IEEE Trans. Microw. Theory Tech., vol. 49, no. 5, pp. 913–917, May 2001.
[11]. C.-H. Wu, C.-S. Liu and S.-I. Liu “A 2-GHz CMOS variable-gain amplifier with 50-dB linear-in-magnitude controlled gain range for 10GBase-LX4 ethernet” IEEE ISSCC Dig. Tech. Paper, pp.484 -541, Feb. 2004.
[12]. Ken Long Feng “Dual-band high-linearity variable-gain low-noise amplifiers for wireless applications” IEEE ISSCC Dig. Tech. Paper, pp. 224 -225, Feb.1999.
[13]. J. Xiao, I. Mehr and J. Silva-Martinez ”A high dynamic range CMOS variable gain amplifier for mobile DTV tuner,” IEEE J. Solid-State Circuit, vol. 42, pp. 292-301, Feb. 2007.
[14]. J.D. Jin, S.S. Hsu, “A 0.18-μm CMOS balanced amplifier for 24-GHz applications,” IEEE J. Solid-State Circuits, vol. 43, pp.1047-1054, May 2007
[15]. K.-W. Yu, Y.-L. Lu, D.-C. Chang, V. Liang, and M. F. Chang, “K-band low-noise amplifiers using 0.18µm CMOS technology,” IEEE Microw. Wireless Compon. Lett., vol. 14, no. 3, pp. 106–108, Mar. 2004.
[16]. S.-C. Shin, M.-D. Tsai, R.-C. Liu, K.-Y. Lin, and H.Wang, “A 24-GHz 3.9-dB NF low-noise amplifier using 0.18µm CMOS technology,” IEEE Microw. Wireless Compon. Lett., vol. 15, no. 7, pp. 448–450, Jul.2005.
[17]. X. Guo and K. K. O, “A power efficient differential 20-GHz low noise amplifier with 5.3-GHz 3-dB bandwidth,” IEEE Microw. Wireless Compon. Lett., vol. 15, no. 9, pp. 603–605, Sep. 2005.
[18]. S.C. Shin, S.F. Lai, K.Y. Lin, M.D. Tsai, H. Wang, C.S. Chang, Y.C. Tsai, “18-26 GHz low-noise amplifiers using 130- and 90-nm bulk CMOS technologies,” in Proc. IEEE RFIC Symp., 2005, pp. 47–50.
[19]. P.J. Riemer, J.F. Prairie, B.R. Buhrow, C.L. Chen, C.L. Keast, P.W. Wyatt, B.A. Randall, B.K. Gilbert, E.S. Daniel, “Ka-band (35 GHz) low-noise 180 nm SOI CMOS amplifier,” in IEEE SOI Conference, Oct. 2006 ,pp.125–126
[20]. L. Aspemyr, H. Jacobsson, M. Bao, H. Sjoland, M. Ferndahl, and G. Carchon, “A 15 GHz and a 20 GHz low noise amplifier in 90 nm RF-CMOS,” in Silicon Monolith. Integr. Circuits RF Syst. (SiRF), Tech. Dig., Jan. 2006, pp. 387–390.
[21]. H.Y. Liao, K.C. Liang, H.K. Chiou, “A compact and low power consumption K-band differential low noise amplifier design using transformer feedback technique,” in Asia-Pacific Microwave Conference (APMC), Dec. 2007, pp.571–574
[22]. A. Sayag, S. Levin, D. Regev, D. Zfira, S. Shapira, D. Goren, D. Ritter, “A 25 GHz 3.3 dB NF low noise amplifier based upon slow wave transmission lines and the 0.18µm CMOS technology,” in Proc. IEEE RFIC Symp., 2008, pp. 373–376.
[23]. Y.L. Wei, S.S. Hsu, and J.D. Jin, “A low-power low-noise amplifier for K-band applications,” IEEE Microw. Wireless Compon. Lett., vol. 19, no. 2, pp. 116–118, Feb. 2009.
[24]. W.C. Wang, Z.D. Huang, G. Carchon, A. Mercha, S. Decoutere, W. De Raedt, C.Y. Wu, “ A 1 V 23 GHz low-noise amplifier in 45 nm planar bulk-CMOS technology with high-Q above-IC inductors,” IEEE Microw. Wireless Compon. Lett., vol. 19, no. 5, pp. 326–328, May 2009.
[25]. T.H. Lee, “The Design of CMOS Radio-Frequency Integrated Circuits,” Cambridge University Press, 2004.
[26]. H. T. Friis, “Noise figure of radio receivers,” Proceedings on IRE, Vol. 32, No. 7, pp. 419-422, July 1944.
[27]. H.L. Tu, T.Y. Yang, K.H. Liang, and H.K. Chiou ” A 30-GHz 10-dB low noise amplifier using standard 0.18-m CMOS technology” Microwave and optical technology letters / Vol. 49, No. 3, March 2007 page 647~649.
[28]. C.C. Chen, Y.S. Lin, J.F. Chang, and J.H. Lee ” A K-band low-noise amplifier using shunt RC-feedback and series inductive-peaking techniques” Microwave and optical technology letters, Vol. 50, No. 5, May 2008 page 1148~1151
[29]. T.S.D. Cheung, J.R. Long, K. Vaed, R. Volant, A. Chinthakindi, C.M. Schnabel, J. Florkey, K. Stein, “On-chip interconnect for mm-wave applications using an all-copper technology and wavelength reduction,” in IEEE ISSCC Dig. Tech. Papers., Feb. 2003, pp. 396–397.
[30]. T. Yao, M. Q. Gordon, K. K. W. Tang, K. H. K. Yau, M.-T. Yang, P. Schvan, S. P. Voinigescu, “Algorithmic Design of CMOS LNAs and PAs for 60-GHz Radio” in IEEE J. of Solid-State Circuits, pp. 1044 - 1057 May 2007 .
[31]. C. H. Doan, S. Emami, A. M. Niknejad, and R. W. Brodersen, “Mil-limeter-wave CMOS design,” IEEE J. Solid-State Circuits, vol. 40, no.1, pp. 144–155, Jan. 2005.
[32]. C. M. Lo, C. S. Lin, and H. Wang, “A miniature V-band 3-stage cascode LNA in 0.13 ?m CMOS,” in IEEE ISSCC Dig. Tech. Papers, 2006, pp. 1254–1263.
[33]. C. Y. Wu; P. H. Chen “A Low Power V-band Low Noise Amplifier Using 0.13-μm CMOS Technology”. ICECS 2007. Dec. 2007 pp.1328 - 1331
[34]. J. W. Huang; C. S. Wang; C. K. Wang; S. H. Yeh “Vertical-Ground-Plane Transmission Lines for Miniaturized Silicon-Based MMICs,” in Proc. IEEE RFIC Symp., 2007, pp. 563 - 566.
[35]. T. P. Wang and H. Wang, “A broadband 42–63 GHz amplifier using0.13 mm CMOS technology,” in IEEE MTT-S Int. Dig., Honolulu, HI,Jun. 2007, pp. 1779–1782.
[36]. B. Heydari, M. Bohsali, E. Adabi and A.M. Niknejad, “Low-power mm-wave components up to 104GHz in 90nm CMOS” in IEEE ISSCC Dig. Tech. Papers, 2007, pp. 200-201.
[37]. S. Pellerano ; Y. Palaskas ; K. Soumyanath , “A 64 GHz LNA With 15.5 dB Gain and 6.5 dB NF in 90 nm CMOS,” IEEE J. Solid-State Circuits, vol. 43, pp. 1542 - 1552, July. 2008
[38]. T. Mitomo ; R. Fujimoto ; N. Ono ; R. Tachibana ; H. Hoshino ; Y. Yoshihara ; Y. Tsutsumi ; I.Seto, “A 60-GHz CMOS Receiver Front-End With Frequency Synthesizer,” IEEE J. Solid-State Circuits, vol. 43, pp. 1030-1037, April. 2008.
[39]. M. Varonen ; M. Karkkainen ; M. Kantanen ; K. Halonen, “Millimeter-Wave Integrated Circuits in 65-nm CMOS,” IEEE J. Solid-State Circuits, vol. 43, pp. 1991 - 2002, Sept. 2008.
[40]. A. Hajimiri and T. H. Lee, “A General Theory of Phase Noise in Electrical Oscillators,” IEEE J. Solid-State Circuits, vol. 33, no. 2, pp. 179-194, Feb. 1998.
[41]. Q. Huang, “Phase noise to carrier ratio in LC oscillators,” IEEE Trans. Circuits Syst. I, Reg. Paper, vol. 47, no. 7, pp. 965-980, Jul 2000.
[42]. K. Kwok and H. C. Luong, “ Ultra-Low- Voltage High-Performance CMOS VCOs Using Transformer Feedback” IEEE J. of Solid-State Circuits, vol. 40, no. 3, pp.652-660, March 2005.
[43]. S. Ko, J.-G. Kim, T. Song, E. Yoon, and S. Hong, “K- and Q-bands CMOS frequency sources with X-band quadrature VCO,” IEEE Trans. Microw. Theory Tech., vol. 53, no. 9, pp. 2789–2800, Sep. 2005
[44]. H.-H. Hsieh and L.-H. Lu, “A low-phase-noise K-band CMOS VCO,”IEEE Microw. Wireless Compon. Lett., vol. 16, no. 10, pp. 552–554,Oct. 2006.
[45]. D. Ozis, N. Neihart, and D. Allstot, “Differential VCO and passive fre-quency doubler in 0.18?m CMOS for 24 GHz applications,” in IEEE RFIC Symp. Dig., Jun. 2006, pp. 11–13.
[46]. C.-C. Li, T.-P. Wang,, C.-C. Kuo, M.-C. Chuang, and H. Wang , “A 21 GHz Complementary TransformerCoupled CMOS VCO,” IEEE Microw. Wireless Compon. Lett vol. 18, no. 4, april 2008
[47]. H.-H. Hsieh, Y.-H. Chen, and L.-H. Lu, “A Millimeter-Wave CMOS LC-Tank VCO With an Admittance-Transforming Technique,” IEEE Trans. Microwave Theory Tech., vol. 55, no.9, pp. 1854–1861, September. 2007
[48]. http://www.itrs.net/
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