參考文獻 |
[1] C. Cao, Y. Ding, X. Yang, J. J. Lin, H. T. Wu, A. K. Verma, J. Lin, F. Martin and K. K. O “A 24-GHz transmitter with on-chip dipole antenna in 0.13-?m CMOS,” IEEE J. Solid-State Circuits, vol. 43, no. 6, pp. 1394-1402, June 2008.
[2] C. Lu, A. V. H. Pham, M. Shaw and C. Saint, “Linearization of CMOS broadband power amplifiers through combined multigated transistors and capacitance compensation ,” IEEE Trans. Microw. Theory Tech., vol. 55, no. 11, pp. 2320-2328, Nov., 2007.
[3] S. Kang, B. Choi and B. Kim, “Linearity analysis of CMOS for RF application,” IEEE Trans. Microw. Theory Tech., vol. 51, no. 3, pp. 972-977, Mar., 2003.
[4] K. H. Liang, C. H. Lin, H. Y. Chang and Y. J. Chan, “A new linearization technique for CMOS RF mixer using third-order transconductance cancellation,” IEEE Microw. Wireless Compon. Lett., vol. 18, no. 5, pp. 350-352, May, 2008.
[5] J. Rogers and C. Plett, “Radio Frequency Integrated Circuit Design, ” Artech House, 2003.
[6] 杜至庸, “ 線性化射頻功率放大器之數位基頻預失真技術之研究 A study of digital baseband predistortion technique for linearizing RF power amplifiers, ” 國立中山大學電機工程研究所碩士論文, 民國96年七月.
[7] 梁恭豪,“ 高線性度低功率金氧半場效電晶體射頻混波器應用於無線通訊系統 High linearity and low-power RF CMOS mixers for wireless communication, ” 國立中央大學電機工程研究所博士論文, 民國97年九月.
[8] C. Karnfelt, P. Hallbjorner, H. Zirath and A. Alping, “Hign gain active microstrip antenna for 60-GHz WLAN/WPAN applicaion,” IEEE Trans. Microw. Theory Tech., vol. 54, no. 6, pp. 2593-2602, June, 2006.
[9] I-J. Chen, H. Wang, P. Hsu, “A V-band quasi-optical GaAs HEMT monolithic integrated antenna and receiver front-end,” IEEE Trans. on Microwave Theory and Techniques, vol. 51, no.12, pp. 2461-2468, Dec. 2003.
[10] C.-H. Wang, Y.-H. Cho, C.-S. Lin, H. Wang, C.-H. Chen, D.-C. Niu, J. Yeh, C.-Y. Lee, and J. Chern, “A 60GHz transmitter with integrated antenna in 0.18μm SiGe BiCMOS Technology,” 2006 International Solid-State Circuit Conference, San Francisco, Feb. 2006, pp. 659-668.
[11] H. Hashemi, X. Guan, A. Komijani and A. Hajimiri, “A 24-GHz SiGe phased-array receiver-LO phase-shifting approach,” IEEE J. Solid-State Circuits, vol. 53, no. 2, pp. 614-626, Feb. 2005.
[12] A. Babakhani, X. Guan, A. Komijani, A. Natarajan and A. Hajimiri, “A 77-GHz phased-array transceiver with on-chip antennas in silicon: receiver and antennas,” IEEE J. Solid-State Circuits, vol. 41, no. 12, pp. 2795-2806, Dec. 2006.
[13] M. Tutt, D. Pavlidis, G. I. Ng, M. Weiss and J. L. Cazauxt, “Monolithic Integrated Circuit Applications of InGaAs/InAlAs HEMTs,” 1988 Gallium Arsenide Integrated Circuits (GaAs IC) Symposium, pp. 293-296, Nov. 1988.
[14] Raymond S. Pengelly, “Early GaAs FET monolithic microwave integrated circuit developments for radar applications at Plessey, UK,” 2008 International Microwave Symposium Digest, pp. 827-830, June 2008.
[15] T. H. Oxley, K. J. Ming, G. H. Swallow, B. J. Climer and M. J. Sisson, “Hybrid Microwave Integrated Circuits For Millimeter Wavelengths,” 1972 International Microwave Symposium Digest, pp. 224-226, May 1972.
[16] K. Tsukamoto, and et al, “Development of gigabit millimeter-wave broadband wireless access system -system overview,” 2003 Asia Pacific Microwave Conference Proceeding, vol. 2, pp. 957-960.
[17] E. A. Monastyrev, O. Y. Malakhovskiy, S. L. Kevruh, and M. A. Korablin, “71–76 GHz wireless bridge for ethernet networks,” in Proc.15th Int. Crimean Conf. Microw. Telecommun. Technol., Oct. 2005, pp.78–79.
[18] Charles W. T. Nicholls, “Extension of the frequency range of ceramic resonator oscillators using push-push circuit topology,” 2001 IEEE International Frequency Control Symposium and PDA Exhibition, pp. 728-733.
[19] PPC-100 Series Wireless LAN Bridge Brochure, ElvaLin LLC Corporation,Solon, OH, Jun. 2004.
[20] L. H. Chu, E. Y. Chang, S. H. Chen, Y. C. Lien, and C. Y. Chang, “2 V-operated InGaP-AlGaAs-InGaAs enhancement-mode pseudomorphic HEMT,” IEEE Electron Device. Lett. vol. 26, no. 2, pp. 53-55, Feb. 2005.
[21] T. Chong, “A low-noise, high-linearity balanced amplifier in enhancement-mode GaAs pHEMT technology for wireless base-stations,” 2005 European Gallium Arsenide and Other Semiconductor Application Symposium, Oct. 2005, pp.461-464.
[22] K. W. Kobayashi, “A novel e-mode PHEMT linearized Darlington cascade amplifier,” 2006 IEEE CSIC Symposium Digest, Oct. 2006, pp.153-156.
[23] WIN Semiconductors, “0.5 ?m InGaAs PHEMT enhancement / depletion-model device (E/D-mode) device model handbook,” ver.1.0.1, May, 2006.
[24] G. Gonzales, Microwave Transistor Amplifiers Analysis and Design, 2nd ed. Upper Saddle River, NJ:Prentice-Hall, 1997, ch. 5.
[25] 邱景鴻,“應用於毫米波射頻接收機前端積體電路之研製 Design and Implementation of RF Receiver Front-end Integrated Circuits for Millimeter-wave Applications, ” 國立中央大學電機工程研究所碩士論文, 民國95年六月.
[26] K. W. Kobayashi, A. K. Oki, L. T. Tran, J. C. Cowles, A. G. Aitken, F. Yamada, T. R. Block and D. C. Streit, “A 108-GHz InP-HBT Monolithic Push-Push VCO with Low Phase Noise and Wide Tuning Bandwidth,” IEEE J. Solid-State Circuits, vol. 34, no. 9, pp. 1225-1232, Sept. 1999.
[27] 張傳生,數位通訊原理,初版,儒林書局,臺北市,民國八十一年。
[28] 賈志靜,數位類比通信系統,初版,全華書局,臺北市,民國八十八年。
[29] Z. Lao, J. Jensen, K. Guinn and M. Sokolich, “80-GHz Differential VCO in InP SHBTs,” IEEE Microw. Wireless Compon. Lett., vol. 14, no. 9, pp. 407-409, Sept. 2004.
[30] R. Wanner, H. Schafer, R. Lachner, G. R. Olbrich and P. Russer, “A Fully Integrated SiGe Low Phase Noise Push-Push VCO for 82 GHz,” European Gallium Arsenide and Other Semiconductor Application Symposium, pp. 249-252, Oct. 2005.
[31] H. Li, H. M. Rein, T. Suttorp and J. Bock, “Fully integrated SiGe VCOs with powerful output buffer for 77-GHz automotive radar systems and applications around 100 GHz,” IEEE J. Solid-State Circuits, vol. 39, no. 10, pp. 1650-1658, Oct. 2004.
[32] W. Winkler, J. Brorngraber, B. Heinemann and P. Weger, “60 GHz and 76 GHz oscillators in 0.25 ?m SiGe: C BiCMOS,” in Proc. Int. Solid-State Circuit Conf., San Francisco, CA, Feb. 2003, pp.454-455.
[33] F. Lenk, M. Schott, J. Hilsenbeck, J. Wurfl and W. Heinrich, “Low Phase-Noise Monolithic GaInP/GaAs-HBT VCO for 77 GHz ,” IEEE MTT-S Digest, vol. 2, pp. 8-13, June 2003.
[34] N. Zhang and K. K. O, “94 GHz Voltage Controlled Oscillator With 5.8% Tuning Range in Bulk CMOS,” IEEE Microw. Wireless Compon. Lett., vol. 18, no. 8, pp. 548-550, Aug., 2008.
[35] Y. Baeyens, C. Dorschky, N.Weimann, Q. Lee, R. Kopf, G. Georgiou, J. P. Mattia, R. Hamm and Y. K. Chen, “Compact InP-Based HBT VCOs with a Wide Tuning Range at W- and D-Band,” IEEE Trans. Microw. Theory Tech., vol. 48, no. 12, pp. 2403-2408, Dec., 2000.
[36] C. Cao and K. K. O, “A 140-GHz Fundamental Mode Voltage-Controlled Oscillator in 90-nm CMOS Technology,” IEEE Microw. Wireless Compon. Lett., vol. 16, no. 10, pp. 555-557, Oct., 2006.
[37] E. Seok, C. Cao, D. Shim, D. J. Arenas, D. B. Tanner, C. M. Hung and K. K. O, “A 410 GHz CMOS push-push oscillator with an on-chip patch antenna,” in Proc. Int. Solid-State Circuit Conf., San Francisco, CA, Feb. 2008, pp.472-473.
[38] E. Laskin, M. Khanpour, R. Aroca, K. W. Tang, P. Garcia and S. P. Voinigescu, “A 95 GHz receiver with fundamental-frequency VCO and static frequency divider in 65 nm digital CMOS,” in Proc. Int. Solid-State Circuit Conf., San Francisco, CA, Feb. 2008, pp. 180-181.
[39] R. Weber, M. Kuri, M. Lang, A. Tessmann, M. S. Eggebert and A. Leuther, “A PLL-Stabilized W-Band MHEMT Push-Push VCO with Integrated Frequency Divider Circuit,” IEEE MTT-S Digest, pp. 653-656 , June 2007.
[40] R. E. Makon, R. Driad, K. Schneider, R. Aidam, M. Schlechtweg and G. Weimann, “Fundamental W-Band InP DHBT-Based VCOs With Low Phase Noise and Wide Tuning Range,” IEEE MTT-S Digest, pp. 649-652 , June 2007.
[41] P. C. Huang, R. C. Liu, H. Y. Chang, C. S. Lin, M. F. Lei, H. Wang, C. Y. Su and C. L. Chang, “A 131 GHz push-push VCO in 90-nm CMOS technology,” in IEEE RFIC Symp. Dig., Long Beach, CA, Jun. 2005, pp. 131-134.
[42] Z. M. Tsai, C. S. Lin, C. F. Huang, J. G. J. Chern and H. Wang, “A fundamental 90-GHz CMOS VCO using new ring-coupled quad,” IEEE Microw. Wireless Compon. Lett., vol. 17, no. 3, pp. 226-228, Mar. 2007.
[43] H.-Y. Chang and H. Wang, “A 98/196 GHz low phase noise voltage controlled oscillator with a mode selector using a 90 nm CMOS process,” IEEE Microw. Wireless Compon. Lett., vol. 19, no. 3, pp. 170-172, Mar. 2009.
[44] P. C. Huang, M. D. Tsai, G. D. Vendelin, H. Wang, C. H. Chen and C. S. Chang, “A Low-Power 114-GHz Push-Push CMOS VCO Using LC Source Degeneration,” IEEE J. Solid-State Circuits, vol. 42, no. 6, pp. 1230-1238, June. 2007.
[45] C. Cao and K. K. O, “A 90-GHz voltage-controlled oscillator with a 2.2-GHz tuning rand in a 130-nm CMOS technology,” in VLSI Symp. Dig., Kyoto, Japan, Jun. 2005, pp. 242-243.
[46] K. Chang, RF and Microwave Wireless Systems, John Wiley & Sons, 2000.
[47] 黃胤年,電波傳播與天線,初版,五南書局,臺北市,民國九十二年。
[48] W. L. Stutzman and G. A. Thiele, Antenna theory and design, 2nd ed. John Wiley & Sons, 1998.
[49] X. Chen, W. Zhang, R. Ma, J. Zhang and J. Gao, “Ultra-wideband CPW-fed antenna with round corner rectangular slot and partial circular patch,” IET Microwaves Antennas Propagat., vol. 1, pp. 847-851, Aug. 2007.
[50] P. B. Kenington, Hing-Linearity RF Amplifier Design, Norwood, MA: Artech House, 2000.
[51] B. Razavi, RF microelectronics, Upper Saddle River, NJ:Prentice-Hall, 1998.
[52] 拉薩維(Behzad Razavi)著,類比CMOS積體電路設計,李俊霣譯,麥格羅希爾出版:滄海總經銷,臺北市,民國九十一年。
[53] C. Lu, A. V. H. Pham, M. Shaw and C. Saint, “Linearization of CMOS Broadband Power Amplifiers Through Combined Multigated Transistor and Capacitance Compensation,” IEEE Trans. Microw. Theory Tech.,vol. 55, no. 11, pp. 2320–2328, Nov. 2007.
[54] J. D. Jin and S. S. Hsu, “A 0.18-mm CMOS balanced amplifier for 24-GHz applications,” IEEE J. Solid-State Circuits, vol. 43, pp.1047-1054, May 2007.
[55] S. C. Shin, M. D. Tsai, R. C. Liu, K. Y. Lin and H. Wang, “A 24-GHz 3.9-dB NF Low-Noise Amplifier Using 0.18?m CMOS Technology,” IEEE Microw. Wireless Compon. Lett., vol. 15, no. 7, pp. 448-450, July, 2005.
[56] Y. L. Wei, S. S. H. Hsu and J. D. Jin, “A low-power low-noise amplifier for K-band applications”, IEEE Microw. Wireless Compon. Lett., vol. 19, no. 2, pp. 116-118, Feb. 2009.
[57] K. W. Yu, Y. L. Lu, D. C. Chang, V. Liang and M. F. Chang, “K-Band low-noise amplifiers using 0.18?m CMOS technology”, IEEE Microw. Wireless Compon. Lett., vol. 14, no. 3, pp. 106-108, Mar. 2004.
[58] L. M. Franca-Neto, B. A. Bloechel and K. Soumyanath, “17 GHz and 24 GHz LNA Designs based on Extended-S-parameter with Microstrip –on –Die 0.18mm Logic CMOS Technology,” in IEEE, vol. 50, no. 9, pp. 149-152, Sep. 2003.
[59] X. Guan and A. Hajimiri, “A 24GHz CMOS front-end”, IEEE J. Solid- State Circuits, vol. 39, no. 2, pp. 368–373, Feb. 2004.
[60] H.-Y. Liao, K. C. Liang and H. K. Chiou, “A compact and low power consumption K-band differential low noise amplifier design using transformer feedback technique”, Proc. 19th Asia-Pacific Microwave Conf. (APMC 2007),Bangkok, Thailand, 11-14 Dec. 2007, pp. 571–574.
[61] H.-Y. Chang, P. S. Wu, T. W. Huang, H. Wang, C. L. Chang and J. G. J. Chern, “Design and Analysis of CMOS Broad-Band Compact High-Linearity Modulator for Gigabit Microwave/Millimeter-Wave Applications,” IEEE Trans. Microwave Theory Tech., vol. 54, no. 1, pp. 20-30, Jan. 2006.
[62] A. E. Ashtiani, S. I. Nam, A. D. Espona, S. Lucyszyn and I. D. Robertson, “Direct multilevel carrier modulation using millimeter-wave balanced vector modulators,” IEEE Trans. Microwave Theory Tech., vol. 46, no. 12, pp. 2611-2619, Dec. 1998.
[63] H.-Y. Chang, “Design of broadband highly linear IQ modulator using a 0.5-mm E/D-PHEMT process for willimeter-wave applications,” IEEE Microw. Wireless Compon. Lett., vol. 18, no. 7, pp. 491-493, July 2008.
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