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姓名 廖俊傑(Jyun-jie Liao) 查詢紙本館藏 畢業系所 材料科學與工程研究所 論文名稱 不同能量的Ar+與N2+離子束轟擊GaAs(100)表面的光輻射現象
(Light emission from a GaAs(100) target during several keV Ar+ and N2+ ions sputtering)相關論文 檔案 [Endnote RIS 格式]
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摘要(中) 由於一加速離子射束與固體表面碰撞時產生的受激粒子,會經由非輻射降激 (radiationless deexcitation) 或輻射降激釋放出光子的方式回到穩定態,以9keV, 6keV, 3keV的Ar+離子束及N2+離子束轟擊乾淨GaAs(100)表面時,我們可探討入射離子能量及種類與GaI三條原子光譜線GaI417.2nm, GaI403.3nm, GaI294.4nm輻射強度的關係;另外研究報告指出,不論是輻射降激或非輻射降激過程都與表面的化學狀態有很密切的關係,例如有氧氣分子的存在會增強鋁靶在離子轟打下光輻射的強度,實驗中分別以9keV Ar+離子束及9keV N2+離子束轟擊GaAs(100)表面,觀察GaI的三條原子光譜線輻射強度在腔體含有不同壓力的氧氣或氮氣下的變化,並計算氧的附著率及氧的濺射率。
摘要(英) The interaction of energetic ions with solid surfaces results in the emission of excited ions. The excited particles decay either by a radiationless deexcitation process or by radiative photon emission. In this study, we use 9keV, 6keV and 3keV Ar+ ions and N2+ ions bombard clean GaAs(100) target separately. Results of the measurements on the projectile energy and ion type dependences of Ga I 417.2nm, 403.3nm and 294.4nm lines are presented. It is known that the process of radiationless and radiative deexcitation are highly sensitive to the chemical state of the surface. For example, the presence of oxygen has been found to enhance the light emission from aluminium target under ion impact. In this study, we use 9keV Ar+ ions and N2+ ions bombard GaAs(100) to measure the light intensities are as a function of O2 or N2 pressure. Also, the oxygen sputtering coefficient So and oxygen sticking probability Cs are studied.
關鍵字(中) ★ 砷化鎵
★ 光輻射
★ 濺射關鍵字(英) ★ light emission
★ sputtering
★ gallium arsenide論文目次 摘要.....................................................Ⅰ
目錄.....................................................Ⅱ
圖目錄...................................................Ⅳ
表目錄...................................................Ⅶ
第一章 緒論......................................1
1.1簡介.............................................1
1.2各章摘要.........................................2
第二章 基本原理..................................4
2.1濺射粒子的產生型式...............................5
2.2濺射粒子產生光輻射現象成因.......................7
2.3影響光子產率的因子...............................7
2.4能量與光子產率的關係.............................9
第三章 實驗設備與步驟...........................12
3.1實驗設備........................................12
3.1.1真空系統......................................12
3.1.2離子源系統....................................13
3.1.3光源偵測系統..................................14
3.2實驗步驟........................................15
3.2.1準備實驗階段..................................16
3.2.2正式實驗階段..................................17
第四章 數據結果與分析...........................26
4.1離子束以不同角度入射對GaI譜線強度的影響........26
4.2不同離子能量對GaI譜線強度的影響................26
4.3不同曝氣壓力對GaI譜線強度的影響................27
4.4氧的濺射率與附著率的計算........................29
第五章 結論.....................................46
參考資料...........................................47
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[2] Sputtering by Particle Bombardment III (eds. R. Behrisch and K. Wittmaack;Springer-Verlog Berlin Heidelberg New York 1991) p.1~11.
[3] G. E. Thomas, Surface Science, 90, 381 (1979).
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[7] P. Sigmund, Inelastic Ion-Surface Collision (eds. N. H. Tolk, J. C. Tully, W. Heiland and C. W. White;Academic Press, Inc. New York San Francisco London 1977) p.121.
[8] H. G. Prival, Surface Science, 16, 443 (1978) .
[9] I. S. T. Tsong, Inelastic Particle-Surface Collision (eds. E. Taglauer and W. Heiland;Springer-Verlog Berlin Heidelberg New York 1981) p.258.
[10] R. B. Wright and D. M. Gruen, J. Chem. Phys., 73, 664 (1980).
[11] R. Kelly, Inelastic Particle-Surface Collision (eds. E. Taglauer and W. Heiland;Springer-Verlog Berlin Heidelberg New York 1981) p.292.
[12] R. S. Bhattacharya, J. F. Van der Veen, C. B. W. Kerkdijk, and F. W. Saris, Radiat. Eff. 32, 25 (1977)
[13] D. Ghose, Vacuum, 46, 13 (1995).
[14] D. Ghose, U. Brinkmann and R. Hippler, Surface Science, 327, 53 (1995).
指導教授 李敬萱(Chin-Shuang Lee) 審核日期 2009-7-20 推文 plurk
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