博碩士論文 87323083 詳細資訊




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姓名 劉哲銘(C-M Liu)  查詢紙本館藏   畢業系所 機械工程學系
論文名稱 以熱交換器法生長氧化鋁單晶與晶體檢測
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摘要(中) 本研究也針對利用熱交換器法所生長出之Sapphire晶體作一系列的檢測,例如利用穿透式及反射式光學顯微鏡(Optical-Microscope)及掃描式電子顯微鏡(Scanning-Electron-Microscope)觀察晶體之微觀組織,比較在不同的生長條件下其結構組織之不同,並與品質良好之氧化鋁單晶做比較,同時探討晶體中缺陷產生之原因,另外還利用能譜儀(Energy-Dispersive-Spectrometer)來對晶體之成分做分析,以確定污染物之種類及分佈狀況,且為了要了解晶體缺陷對晶體硬度之影響,還利用微硬度測試儀來測試所生長出之晶體硬度,比較與單晶的差異,希望能藉這些檢測來作為改善晶體品質之依據,以期能生長出高品質、高純度之晶體。
關鍵字(中) ★ 熱交換器法
★ 氧化鋁
★ 晶體
關鍵字(英) ★ HEM
★ Sapphire
★ Crystal
論文目次 摘要..................................................I
致謝..................................................II
目錄..................................................III
圖表目錄..............................................V
第一章 序論...........................................1
1.1熱交換器法之簡介.................................1
1.2氧化鋁晶體性質與應用..........................2
1.3 文獻回顧..........................................3
1.4 研究動機..........................................5
第二章晶體生長........................................6
2.1實驗設備...........................................6
2.2實驗...............................................8
2.2.1實驗前之準備工作...............................8
2.2.2實驗步驟.........................................9
2.2.3長晶過程及現象之探討.......................10
2.3 長晶結果..........................................12
2.3.1 利用降溫來生長晶體..........................13
2.3.2 利用增加氦氣流量生長晶體.............15
2.4 結論............................................................16
第三章 晶體之檢測及缺陷之研究............17
3.1 缺陷之種類........................................17
3.2檢測之方法.........................................17
3.3缺陷分析...........................................18
3.3.1氣孔分析.........................................18
3.3.2 樹枝狀結構分析..................................19
3.3.3 差排分析........................................20
3.4晶種之檢測.........................................20
3.5晶體之檢測.........................................21
3.6結論...............................................23
第四章 總結論.........................................24
4.1 結論..............................................24
4.2 未來方向..........................................24
參考文獻..............................................58
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[42] C. P. Khattak and F. Schmid , “ Growth and characterization of 200 kg multicrysalline silicon ingots by HEM ” , IEEE (1997) 111
[43] J. H. Wang , D. H. Kim , J. S. Huh , “ Modeling of crystal growth process in heat exchanger method ” , Journal of Crystal Growth 174 (1997) 13
[44] Y. Z. Zhou , “ Growth of high quality large Nd:YAG crystals by temperature gradient technique ” , Journal of Crystal Growth 78 (1986) 31
[44] Y. Z. Zhou , “ Growth of high quality large Nd:YAG crystals by temperature gradient technique ” , Journal of Crystal Growth 78 (1986) 31
[44] Y. Z. Zhou , “ Growth of high quality large Nd:YAG crystals by temperature gradient technique ” , Journal of Crystal Growth 78 (1986) 31
[44] Y. Z. Zhou , “ Growth of high quality large Nd:YAG crystals by temperature gradient technique ” , Journal of Crystal Growth 78 (1986) 31
[44] Y. Z. Zhou , “ Growth of high quality large Nd:YAG crystals by temperature gradient technique ” , Journal of Crystal Growth 78 (1986) 31
指導教授 陳志臣(Jyh-Chen Chen) 審核日期 2000-7-17
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