奈米碳管元件之製作與分析

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鄭木棋(Mu-Chin Cheng) 查詢紙本館藏

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機械工程學系

論文名稱

奈米碳管元件之製作與分析
(Fabrication and Characterization of Carbon Nanotube Device)

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摘要(中)

利用微波電漿化學氣相沉積(Microwave Plasma Chemical Vapor Deposition, MPCVD)以金屬Ni來當作觸媒在基板溫度400℃下，成長出圖案化多壁奈米碳管(Multiwall Carbon Nanotube, MWCNT)。
利用IC圖案化製程和MPCVD，在Vias結構中成長出直徑為20-40nm的多壁奈米碳管，來當作積體電路內連線中的材料。
以拉曼散射光譜(Raman Spectroscopy)和場發射量測儀器(Field Emission Measurement)，來探討不同製程參數對於奈米碳管的場發射和石墨化性質影響。

摘要(英)

Well-patterned multi-walled carbon nanotubes were grown by microwave plasma chemical vapor deposition with Ni as catalyst at 400℃.
The resulting multi-walled carbon nanotubes with 20-40nm in diameter were used as interconnect material in vias by microwave plasma chemical vapor deposition and patterning process.
Effects of growth parameters on the field emission and the graphitize of multi-walled carbon nanotube were analyzed by raman spectroscopy and field emission measurement.

關鍵字(中)

★ 奈米碳管
★ 場發射
★ 內連線

關鍵字(英)

★ Interconnect
★ Field emission
★ Carbon nanotube

論文目次

目錄
摘要 i
目錄 ii
圖表目錄 iv
第一章緒論
1.1 前言 1
1.2 研究動機 3
第二章奈米碳管介紹
2.1奈米碳管的製備方法 6
2.2微波電漿觸媒化學氣相沉積 7
2.3奈米碳管的晶體結構 9
2.4奈米碳管電子應用 12
第三章實驗方法
3.1 以微波電漿觸媒化學氣相沉積成長奈米碳管 22
3.2 整合奈米碳管到金屬內連線 23
3.3 奈米碳管二極體元件製作 23
3.4 奈米碳管場發射二極體元件製作和量測 24
3.5 實驗儀器簡介 25
第四章結果與討論
4.1多壁奈米碳管的結構 34
4.2 Vias 結構中成長奈米碳管 36
4.3 奈米碳管二極體元件製作 38
4.4 製程參數對奈米碳管的場發射、石墨化影響 40
第五章結論 70
參考文獻 71
圖目錄
圖1-1 多壁奈米碳管TEM成像 4
圖1-2 單壁奈米碳管TEM成像 4
圖1-3 奈米碳管的同素異構體 5
圖1-4 想像石墨片捲成單壁奈米碳管 5
圖 2-1成長奈米碳管方法 16
圖2-2 MPCVD示意圖 17
圖2-3 奈米碳管結構示意圖 17
圖2-4 奈米碳管二維平面示意圖 18
圖2-5 奈米碳管的螺旋性 18
圖2-6 奈米碳管金屬、半導體性質 19
圖2-7 金屬在真空系統中的能階圖 19
圖2-8 積體電路內連線的RC時間延遲示意圖 20
圖2-9 內連線金屬材料性質 20
圖2-10奈米碳管用於金屬內連線 21
圖3-1 MPCVD成長奈米碳管的流程 28
圖3-2 金屬內連線的示意圖 29
流程圖3-3 以MPCVD 在Vias結構中成長奈米碳管 30
流程圖3-4 以 MPCVD 來製造奈米碳管二極體元件 31
圖3-5場發射量測儀器示意圖 32
圖3-6 拉曼原理示意圖 32
圖3-7 拉曼量測儀器圖示 32
圖3-8 ID/IG 積分圖示 33
圖4-1 高準直度的奈米碳管膜 45
圖4-2 定位成長的奈米碳管陣列 45
圖4-3 奈米碳管TEM成像圖 46
圖4-4 奈米碳管中空竹節狀結構 47
圖4-5 IC圖案化後Vias 結構SEM圖 48
圖4-6為不同尺寸奈米碳管Via結構所形成的陣列 49
圖4-7 Vias結構尺寸為2μm 49
圖4-8 Vias結構尺寸為0.2μm 49
圖4-9 大面積的在Vias 結構中成長奈米碳管 50
圖4-10 定義Vias結構中奈米碳管形態參數 51
圖4-11 不同成長電漿功率對奈米碳管形態的影響 51
圖4-12不同Vias 剖面尺寸對奈米碳管的影響 52
圖4-13 成長電漿功率對奈米碳管形態的影響 53
圖4-14 濺渡金屬Ta作上電極 54
圖 4-15量測Vias結構元件電壓-電流值 54
圖4-16 不同剖面尺寸的Ni催化金屬塊 55
圖4-17 剖面尺寸對奈米碳管形態的影響 56
圖4-18成長溫度對奈米碳管形態影響 57
圖4-19 成長電漿功率對奈米碳管形態影響 58
圖4-20 奈米碳管場發射元件和場發射參數設定 59
圖4-21 成長時間對奈米碳管場發射和拉曼分析 60
圖4-22 不同成長時間的Eth Ere 和 ID/IG 61
圖4-23不同甲烷流量速率比對奈米碳管形態影響 62
圖4-24甲烷流量比對奈米碳管場發射和拉曼分析 63
圖4-25不同甲烷流量比的Eth Ere 和 ID/IG 64
圖4-26不同氮氣流量比對場發射和拉曼分析 65
圖4-27不同氮氣流量比的Eth Ere 和ID/IG 66
圖4-28ID/IG 和Eth Ere關係 67
圖4-29 不同ID/IG 和電流上升速度的關係 68
表目錄
表1 Vias結構中成長奈米碳管 69
表2 成長時間對奈米碳管場發射特性影響 69
表3 甲烷流量比對奈米碳管場發射特性影響 69
表4 氮氣流量對奈米碳管場發射特性影響 69

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指導教授

黃豐元(Fuang-Yuan Huang)

審核日期

2004-7-10

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