熱化學氣相沉積法成長橫向碳奈米管之電性研究

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陳志豪(Chih-Hao Chen) 查詢紙本館藏

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機械工程學系

論文名稱

熱化學氣相沉積法成長橫向碳奈米管之電性研究
(Electrical characterization of laterally grown carbon nanotube by thermal CVD)

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摘要(中)

本實驗利用化學氣相沉積法(Thermal Chemical Vapor Deposition)成長橫向碳奈米管(Carbon nanotubes, CNTs)於二極元件上，且探討碳源供給型態、載氣型態及成長時間對碳管整合之二極元件的電性影響，並利用參數的控制來達到少根碳管橋接於兩極之間。在載氣中若增加氮氣含量，可有效提高碳管石墨化，但也使碳奈米管成長數量大幅減少，因此在考慮碳管高石墨化下，並得到少根碳管橋接又不至於使元件斷路，選擇含氮量為50%為最佳參數。利用此組參數於三極元件上，並成功在不同間距成長少根碳管懸接，在搭配三條獨立方程式輕易求解出橋接於不同間距中各碳奈米管之內電阻，與碳奈米管/金屬電極接面之接觸電阻，並透過退火步驟，碳奈米管之內電阻變化不是太大，但接觸電阻在連續退火至900℃會有最低值，其值由幾百KΩ下降至十幾KΩ，並且從室溫至40K下作測量電性，可發現碳管電阻值會因為環境溫度下降，而有升高之趨勢，但接觸電阻則無明顯的變化。

摘要(英)

The objective of this disquisition presented that laterally grown carbon nanotubes (CNTs) on diode devices by thermal chemical vapor deposition (Thermal CVD). Follow growing, the electrical characterization of various parameters including carbon source, carrier gas and grown time on carbon nanotube growth was discussed. Singular or few carbon nantubes were bridged on diode device by controlling the proper parameters. As nitrogen concentration increased, number of bridged CNTs reduced. Addition of N2 enhanced the degree of graphitization of CNTs but the diode device was an open circuit and length of CNTs was shorter at the nitrogen concentration of 60%. The proper nitrogen concentration was 50%. Using the parameter on triode device, it was formed a metal /carbon nanotube /metal /carbon nanotube /metal structure. Contact resistance, Rc , and tow net resistances, RCNT1 and RCNT2, were determined from three equations. In the triode device, the effect of annealing on the resistances of CNT itself was not noticeable. The contact resistance between CNTs and metal electrode could be reduced most after 900 C annealing process. From 40 K to room temperature, resistances of CNTs themselves decreased with temperature while the contact resistance between CNTs and metal electrode remained unchanged.

關鍵字(中)

★ 碳奈米管
★ 接觸電阻
★ 退火
★ 低溫量測

關鍵字(英)

★ Carbon Nanotube
★ Contact Resistance
★ Annealing
★ Low Temperature Measurement

論文目次

目錄
中文摘要 I
英文摘要 II
謝誌 III
目錄 IV
圖目錄 VI
表目錄 XI
符號說明 XII
第一章緒論 1
1.1 前言 1
1.2 研究動機 3
第二章碳奈米管與文獻回顧 5
2.1 碳奈米管的發現與特性 5
2.2 碳奈米管的晶體結構與排列 9
2.3 碳奈米管的合成方法與成長機制 13
2.4 碳奈米管電性與接觸電阻 18
2.5 碳奈米管之相關應用 19
第三章實驗內容 23
3.1 實驗方法 23
3.2 實驗流程 25
3.3 橫向碳管元件整合與製作 26
3.3.1 光罩設計 27
3.3.2 元件製作步驟 28
3.4 碳奈米管鑑定方法 31
3.5 橫向成長碳奈米管整合元件之電性分析 33
3.6 實驗儀器簡介 36
第四章結果與討論 39
4.1 島塊結構與成長碳奈米管 39
4.2 尺寸結構對於成長碳奈米管的影響 42
4.3 二極元件在不同成長參數的電性 45
4.3.1 碳源中乙烯比例對總電阻的影響 45
4.3.2 載氣中氮氣比例對總電阻的影響 53
4.3.3 成長時間對總電阻的影響 58
4.4 利用三極元件作碳奈米管之電性探討 63
4.4.1 退火後碳奈米管之電性 68
4.4.2 在低溫環境下碳奈米管之電性 74
第五章結論 80
第六章未來工作與展望 82
參考文獻 83

參考文獻

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指導教授

黃豐元(Fuang-Yuan Huang)

審核日期

2006-7-18

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