微陽極導引電鍍銅其組織及底部覆蓋範圍之探討

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姓名

賴格源(Ge-Yuan Lai) 查詢紙本館藏

畢業系所

機械工程學系

論文名稱

微陽極導引電鍍銅其組織及底部覆蓋範圍之探討
(Research of the morphology and deposition region of Cu microstructure by micro-anode guided electroplating (MAGE))

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摘要(中)

本研究採用微陽極導引電鍍法(Micro anode guided electroplating ，MAGE)，在0.80M硫酸銅鍍液中析鍍銅金屬。分為單步析鍍、步進析鍍的實驗探討偏壓、間距對析鍍範圍、形貌及電場強度的影響。
單步析鍍結果顯示：間距5μm、偏壓3.2V，金屬析鍍範圍為217.91μ
m；在相同的間距(5um)、偏壓2.9V下，金屬析鍍範圍為129.69μm，金屬的析鍍範圍會隨著偏壓減小而縮小。在間距5μm、偏壓3.2V，析鍍所得表面平滑度較差；但在偏壓2.9V下，析鍍物表面均勻、細緻。利用有限元素分析法可估算金屬析鍍成長所需最低電場強度為4200V/m。
步進析鍍研究結果得知：間距5μm、偏壓在2.9~3.2V之間，金屬析鍍臨界範圍之直徑分別為206.75、228.25、307.25及327.75μm，金屬臨界析鍍範圍分別隨著偏壓增加而擴大。間距5μm時，偏壓由2.9增加至3.2V時，析鍍物的顆粒粒徑分別為0.69、1.05、2.15~7.6及4.01~15.86，顯示析鍍物顆粒隨偏壓增加而加粗；固定偏壓在2.9V時，間距由5增加至10μm，析鍍物的顆粒粒徑分別為由0.69下降至0.45μm，顯示析鍍顆粒隨著兩極間距增加而減小。採用有限元素分析法可估算金屬開始析鍍的臨界電場強度為69.9V/m。

摘要(英)

Micro-anode guided electroplating(MAGE) method was investigated to deposit Cu micrometer column in 0.8M sulfate bath using single-step、stepping and constant period electroplating . The effect of electrical bias、inter-electrode gap , on the coverage area, morphology and microstructure of the deposit was interest.
The single-step electroplating resulted in that for the inter-electrode gap at 5um, the coverage area of the dposit on the substructure decreases from 217.69 um to 129.69 um with decrease the bias from 3.2 to 2.9V. The morphology of the micrometer Cu-columns exhibits a rough surface at higher bias (ie. 3.2V) at a gap of 5um. It displays uniform and fine-particle micro meter colums at lower bias (ie. 2.9V). Estinating the electric field for the growth of the micrometer columns by finite element analsis leads for a lowest field strength of 4200V/m to grow the micrometer columns.
Stepping electroplating resulted in the follow order for the diameter of the coverage area of micrometer Cu-columns ：206.75<228.25<307.25<327.75 um with decrease the bias from 3.2V to 2.9V at inter-electrode gap of 5um. The SEM morphology exhibits that the particles deposited increses their diameter on the order 0.69<1.05<2.15~7.6<4.01~15.68um with increase the bias for 2.9 to 3.2V at a gap of 5um. Fixing at a bias of 2.9V and varying the gap from 5 to 10um, the particles deposited decrease their diameter for 0.69 to 0.45um. It is evident that the particle size of the deposits increase with bias but decrease with the gap between electrodes. The electrical field was estimated to be at least 69.9V/m for commense of coverage on the substrate for MAGE plating.

關鍵字(中)

★ 微陽極導引電鍍
★ 析鍍範圍
★ 析鍍形貌
★ 電場強度

關鍵字(英)

★ MAGE
★ coverage area
★ morphology
★ electrical fiel

論文目次

摘要 I
目錄 III
表目錄 VI
圖目錄 VIII
第一章、前言 1
第二章、文獻回顧與原理學說 3
2.1文獻回顧 3
2.1.1國外發展 3
2.1.2國內發展 5
2.2電鍍原理 6
2.3局部微電鍍概念 7
2.4微陽極導引電鍍法 8
2.4.1微電極的特性 8
2.4.2微電極的限制 10
2.4.3濃度極化現象之影響 10
2.5電場與電力線 10
2.5.1庫倫定律 10
2.5.2電場 11
2.5.3電力線 11
2.5.4電位差 12
2.5.5等位面 13
第三章、實驗與設備 14
3.1實驗之流程圖 14
3.2電極與試片製作 14
3.2.1陽極製作流程 14
3.2.2陰極製作流程 14
3.2.3電解槽 15
3.3實驗方法 15
3.3.1微陽極導引電鍍實驗 15
3.3.2 哈氏槽電鍍 17
3.4實驗儀器簡介 17
3.4.1實驗儀器 17
3.4.2檢測儀器 18
第四章、結果 20
4.1單步(single step)析鍍結果 20
4.1.1金屬析鍍範圍 20
4.1.2析鍍物形貌 21
4.1.3沈積電流取樣 21
4.1.4成長電場強度模擬 22
4.2步進析鍍的結果 23
4.2.1臨界析鍍範圍 23
4.2.2析鍍物組織結構 26
4.2.3析鍍電流 27
4.2.4臨界析鍍電場強度模擬 28
4.3固定時間析鍍行為 29
4.3.1析鍍範圍 29
4.3.2顆粒的粒徑 29
4.3.3電鍍電流 30
4.4哈氏槽試驗結果 31
第五章、討論 32
5.1電場對析鍍物覆蓋範圍的影響 32
5.1.1單步析鍍實驗中偏壓、間距對於覆蓋範圍的影響

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指導教授

林景崎(Jing-Chie Lin)

審核日期

2006-7-18

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