氮矽基鍵合之研究

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姓名

廖文甲(Wen-Chia Liao) 查詢紙本館藏

畢業系所

機械工程學系

論文名稱

氮矽基鍵合之研究
(Silicon Nitride to Silicon Nitride Bonding)

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摘要(中)

晶圓鍵合發展的目標，就是希望能讓所有的材料間，不需任何的黏著層，即可有強大的黏結能力將兩種不同屬於不同的材料接合。在已經發展的晶圓鍵合技術裡，包含濕式活化輔助鍵結、陽極鍵結、電漿活化輔助鍵結、真空鍵結等等，不管任何的鍵結方式，都必須再靠退火製程來提升鍵結強度，也因此，熱應力便成為了一個棘手的問題。
本論文的重點旨在討論利用電漿活化輔助鍵結的方式，執行氮矽基材料間的直接鍵合；實驗分成三大部分，首先討論以RIE產生氮電漿活化氮化矽表面而得的表面粗糙度值；其次，架構在先前的討論上，執行Si3N4 –Si3N4薄膜的直接鍵合，並取得最佳的鍵結狀況。而後，討論鍵結後試片在退火時過程中的劣化現象，並提出解決得方案。

摘要(英)

Wafer bonding is a novel technology to bond two different wafers by no any adhesive layer. Various methods have been developed such as chemical activaion, anodic bonding, plasma activation, vacum bonding, etc. Even this, we still cannot get strongly bonding strength without annealing process. The temperature of annealing process is usually too high to let bonding failure by themal stress. So, how to get the high bonding strength with low annealing temperature becomes an important topic today.
This study provided a method to directly bond the wafers there were silicon nitride thin film had been deposited on and get strongly bonding strength at low temperature. There are three main developments in this study. First, the surface roughness of silicon nitride resulted from using RIE-generated N2-plasma to activate that was discussed. Second, in order to obtain the optimum bonding result, direct Si3N4- Si3N4 bonding can be performed by above discussions. Finally, some solutions have been suggestted to improve degrading phenomenon of bonding interface formed during annealing process.

關鍵字(中)

★ 氮化矽
★ 電漿活化
★ 晶圓鍵合

關鍵字(英)

★ plasma activation
★ wafer bonding
★ silicon nitride bonding

論文目次

摘要 ----------------------------------------------------Ⅰ
英文摘要 ----------------------------------------------- Ⅱ
誌謝 --------------------------------------------------- Ⅲ
總目錄 ------------------------------------------------- Ⅳ
圖目錄 ------------------------------------------------- Ⅶ
表目錄 ------------------------------------------------- Ⅹ
第一章前言 -------------------------------------------- 1
1.1 晶圓鍵合的定義 ---------------------------------- 1
1.2 晶圓鍵合計數之應用 ------------------------------ 2
1.3 研究動機 ---------------------------------------- 3
第二章文獻回顧 ---------------------------------------- 5
2.1 電漿活化對表面的影響 ---------------------------- 5
2.1.1 電漿活化的清潔作用 --------------------------- 5
2.1.2 電漿活化導致表面懸浮見數目的增加 ------------- 6
2.1.3 表面化合物的形成 ----------------------------- 7
2.1.4 增加表面粗糙度 ------------------------------- 8
2.2 電漿活化中對鍵結有影響之因子 --------------------- 8
2.2.1 電漿活化過程之可變因子 ----------------------- 9
2.2.2 電漿活化後表面鍵結前的處理 ------------------- 10
2.2.3 預鍵結後退火溫度與時間的影響 ----------------- 12
2.3 氮化矽薄膜的性質及其應用 ------------------------ 13
第三章實驗方法與步驟 ---------------------------------- 28
3.1 試片準備 ---------------------------------------- 28
3.2 電漿活化 ---------------------------------------- 29
3.2.1 反應式離子蝕刻機（RIE）----------------------- 29
3.2.2 電漿活化步驟 --------------------------------- 30
3.3 實驗結果測試方法介紹 ---------------------------- 30
3.3.1 鍵結狀況觀測 --------------------------------- 30
3.3.2 表面能測試 ----------------------------------- 31
3.3.3 表面粗糙度測試 ------------------------------ 32
第四章實驗結果與討論 ---------------------------------- 39
4.1 電漿活化對Si3N4表面粗糙度的影響 ------------------ 39
4.2 電漿活化輔助Si3N4–Si3N4鍵結實例 ----------------- 40
4.2.1 電漿活化瓦數對鍵結強度的影響 ----------------- 40
4.2.2 退火溫度對鍵結情況的影響 --------------------- 41
第五章結論 -------------------------------------------- 51
參考文獻 ----------------------------------------------- 53

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指導教授

李天錫(Tien-Hsi Lee)

審核日期

2007-7-11

推文