350nm波長光能量輔助矽晶表面光電平滑化

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陳秉翔(Bing-Siang Chen) 查詢紙本館藏

畢業系所

機械工程學系

論文名稱

350nm波長光能量輔助矽晶表面光電平滑化
(350nm Wavelength of Light-Energy-Assisted Photoelectric Silicon Surface Smoothing)

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★ 矽/石英晶圓鍵合之研究	★ 奈米尺度薄膜轉移技術
★ 光能切離矽薄膜之研究	★ 氮矽基鍵合之研究

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摘要(中)

Smart-Cut®技術在SOI 薄膜轉移製程上已被普遍應用，但轉移時氫離子聚合所造成之損傷，至使轉移層上方形成一層粉碎層，且轉移後之單晶矽薄膜的品質，會對後續元件之製作及效能產生影響，因此通常需要在多一道化學機械研磨(CMP)拋光的程序來將此粉碎層移除。
CMP 程序對於粉碎層移除後，使薄膜的均勻度及厚度產生變化，不易達到奈米等級精準度的要求。故為製作奈米等級的單晶矽層SOI 材料，本研究主要目的在於利用蝕刻的方式，透過腐蝕製程，藉由比較不同結晶矽間的腐蝕速率比，來去除此一粉碎層損傷區域，同時達到表面平滑化的效果。
以稀釋之氫氟酸加上雙氧水所調配之蝕刻液，蝕刻粉碎層與轉移單晶矽層會因腐蝕速率差異可作為腐蝕停止層之用。且本實驗發現若同時添加350nm 波長之紫外光(Ultraviolet)照射，能輔助加速蝕刻反應的進行，進而增加粉碎層移除速率，且有效降低矽晶表面粗糙度，達到矽單晶轉移薄膜層表面平滑化之效果。

摘要(英)

Smart-Cut® SOI technology in the layer transfer process has been widelyapplied, but the hydrogen ion implantation causes the injury to make a lattice-defect smash region formed at the top surface. The transfer of single-crystal silicon film quality has an impact on the follow-up components of the production and performance. Therefore, usually needs an extra chemical mechanical polishing (CMP) process to remove the smash region.
CMP process removing the smash region may cause of film uniformity and thickness of the changes, but is difficult to achieve nanometer scale accurate requirements. Therefore, for the production of nano-scale of single-crystal silicon layer SOI materials, the main purpose of this study is using an etching approach. Through the etching process, with different etch-rate with vary crystalline structure, the smash region will be etched out to achieve the effect of smoothing the surface at the same time.
The etching fluid is hydrofluoric acid with hydrogen peroxide diluted. For etching the smash region and the transfer film of the single crystal silicon layer, the different etch-rate is used for keeping complete silicon layer without change. And if added 350 nm wavelength of UV (Ultraviolet) radiation at the same time, etching can be enhanced, thereby increasing the removal rate, to effectively reduce the silicon surface roughness, and then to achieve the effect of single-crystal silicon thin film transfer surface smoothing.

關鍵字(中)

★ 表面平滑化
★ 光能量
★ 矽晶

關鍵字(英)

★ Light-Energy
★ Silicon Surface Smoothing

論文目次

中文摘要………………………………………………………………………..I
英文摘要………………………………………………………………………..II
誌謝…………………………………………………………………………….III
目錄…………………………………………………………………………… IV
圖目錄………………………………………………………………………….VI
表目錄………………………………………………………………………….IX
一、緒論 .......................................................................................................... 1
1.1 研究背景 ..................................................................................................... 1
1.2 研究動機 ..................................................................................................... 2
二、 SOI 薄膜轉移技術及機制 ....................................................................... 4
2.1 氫在矽中的行為 .......................................................................................... 4
2.2 Smart-Cut®薄膜轉移製程及薄化處理和後續平滑化 .............................. 5
2.3 離子佈值之通道效應 ................................................................................. 6
2.4 多晶矽(Poly-Silicon)遮蔽犧牲層 ............................................................... 7
2.4.1 利用多晶矽犧牲層製作超薄SOI ........................................................... 7
2.4.2 多晶矽遮蔽層對表面粗糙度之影響 ...................................................... 7
2.5 現有之單晶奈米絕緣層矽薄膜之平滑技術 ............................................. 8
2.6 蝕刻機制 ..................................................................................................... 9
2.6.1 非等向性濕式蝕刻 ................................................................................ 10
2.6.2 等向性濕式蝕刻 .................................................................................... 11
2.7 紫外光照射對矽晶圓之應用 ................................................................... 11
三、實驗方法與步驟 ..................................................................................... 27
3.1 實驗流程 ................................................................................................... 27
3.1.1 晶圓準備及清洗 .................................................................................... 27
3.1.2 氧化層生成及多晶矽沉積 .................................................................... 27
3.1.3 離子佈植 ................................................................................................ 28
3.1.4 多晶矽蝕刻移除 .................................................................................... 28
3.1.5 晶圓鍵合 ................................................................................................ 28
3.1.6 薄膜轉移 ............................................................................................... 29
3.1.7 SOI 薄膜表面平坦：粉碎層蝕刻 ......................................................... 29
四、實驗結果與討論 ..................................................................................... 34
4.1 多晶矽與二氧化矽之腐蝕速率比較 ....................................................... 34
4.1.1 多晶矽腐蝕情況 ...................................................................................... 34
4.1.2 二氧化矽腐蝕情況 ................................................................................. 35
4.2 SOI 薄膜粉碎層蝕刻及表面平滑化情形 .................................................. 35
4.2.1 蝕刻液無添加紫外光照射之蝕刻情形 ................................................... 35
4.2.2 蝕刻液添加紫外光照射之蝕刻情形 ....................................................... 36
4.3 討論 .............................................................................................................. 37
五、結論 ............................................................................................................. 58
參考文獻 ............................................................................................................. 60

參考文獻

〔1〕R. R. Schaller, “Moore`s law: past, present and future”, Spectrum, IEEE, Vol. 34, Issue 6, pp. 52-59, (1997).
〔2〕吳志宏、劉丙奄、賴文郎、張嘉福和葉性銓，「SOI 晶圓發展之現況與應用」，機械工業雜誌，257 期，(2004)。
〔3〕 J. B. Lasky, et al., “Silicon-on-Insulator (SOI) by Bonding and Etch-Back”, Electron Devices Meeting, 1985 International, Vol. 31, pp. 684-687, (1985).
〔4〕 H. Xiao 著，「半導體製程技術導論」，羅正忠和張鼎張譯，二版，臺灣培生教育出版，臺北市，(2004)。
〔5〕莊達人，「VLSI 製造技術」，五版，高立圖書有限公司，臺北縣，(2002)。
〔6〕Q.-Y. Tong and U. Gösele, Semiconductor Wafer Bonding: Science and Technology, John Wiley＆Sons, Inc., New York, (1999).
〔7〕S. S. Iyer and A. J. Auberton-Herv'e, Silicon Wafer Bonding Technology for VLSI and MEMS Applications, Inspec, London, (2002).
〔8〕M. Bruel, “Silicon on insulator material technology”, Electronics Letters, Vol. 31, Issue 14, pp. 1201-1202, (1995).
〔9〕J. I. Pankove and N. M. Johnson., “Hydrogen in Semiconductors”, Semiconductors and Semimetetals 34, New York, Academic, (1991).
〔10〕D. S. Ginley and D. M. Haaland, “Observation of grain boundary hydrogen in polycrystalline silicon with Fourier transform infrared spectroscopy”, Applied Physics
Letters, Vol. 39, Issue 3, pp. 271-273, (1981).
〔11〕J. Wang et al., “Microstructure evolution of hydrogen-implanted silicon during the annealing process”, Microelectronic Engineering, pp. 314-319,(2003).
〔12〕N. M. Johnson, et al., “Defects in single-crystal silicon induced by hydrogenation”, Physical Review B, Vol. 35, Issue 8, pp. 4166-4169, (1987).
〔13〕S. Romani and J. H. Evans, “Platelet defects in hydrogen implanted silicon”, Nuclear Instruments and Methods in Physics Research Section B, Vol. 44, Issue 3, pp. 313-317, (1990).
〔14〕K. J. Chang and D. J. Chadi, “Hydrogen bonding and diffusion in crystalline silicon”, Physical Review B, Vol. 40, Issue 17, pp. 11644-11653, (1989).
〔15〕C. G. Van de Walle, et al., “Theory of hydrogen diffusion and reactions in crystalline silicon”, Physical Review B, Vol. 39, Issue 15, pp. 10791-10808, (1989).
〔16〕B. Chen, “Mechanisms of layer-transfer related to silicon-on-insulator structures”, New Jersey Institute of Technology, Ph.D. Dissertation, (2004).
〔17〕T. Hara, et al., “H+ implantation in Si for the void cut SOI manufacturing”, Ion Implantation Technology. Proceedings of the 11th International Conference on, pp. 45-48, Austin, TX, USA, (1996).
〔18 〕J.-P. Colinge, Silicon-on-Insulator Technology: Materials to VLSI, 3rd Edition, Springer Science+Business Media, Inc., New York, (2004).
〔19〕T.-H. Lee, “Semiconductor thin film transfer by wafer bonding and advanced ion implantation layer splitting technologies”, Duke University, Ph.D. Dissertation, (1998).
〔20〕C. Maleville and C. Mazuré, “Smart-Cut® Technology: from 300 mm Ultrathin SOI Production to Advanced Engineered Substrates”, Solid-State Electronics, Vol. 48, Issue 6, pp. 1055-1063, (2004).
〔21〕http://en.wikipedia.org/wiki/Smart_Cut.
〔22〕T. Höchbauer, “On the Mechanisms of Hydrogen Implantation Induced Silicon Surface Layer Cleavage”, Marburg University, Ph.D. Dissertation, (2001).
〔23〕吳志偉，「Engineering Science for MEMS Design and Fabrication」，國立台灣海洋大學，(2005)。
〔24〕Hong Xiao, “Introduction to Semiconductor Manufacturing Technology”, Chapter 8. -Ion Implantation.
〔25〕蔣曉白、曾堅信，「低能量離子佈值技術及F+預先非晶化佈值之探討」，NDL 通訊-奈米通訊期刊，第六卷第ㄧ期，(1994)。
〔26〕T.-H. Lee, et al., “ Fabrication of a Nanoscale Single-Crystalline Silicon Thin Film on Insulator” , Electrochemical and Solid-State Letters, 10(7) K17-K19 (2007).
〔27〕T.-H. Lee, et al., “ Nanoscale thick layer transfer of hydrogen-implanted wafer by using polycrystalline silicon sacrificial layer” , Applied Physics Letters 91, 203119 (2007).
〔28〕黃敬涵，「超薄奈米尺度半導體薄膜材料轉移技術」，國立中央大學，博士論文初稿，(2008)。
〔29〕M. Bruel, B. Aspar and A. J. Auberton-Hervé, “Smart-Cut: A New Silicon on Insulator Material Technology Based on Hydrogen Implantation and Wafer Bonding”, Japanese Journal of Applied Physics, Vol. 36, No. 3B, pp. 1636-1641, (1997).
〔30〕C. Malleville, et al., “Wafer Bonding and H-Implantation Mechanisms Involved in The Smart-Cut Technology”, Material Science and Engineering B, Vol. 16, pp. 14-19, (1997).
〔31〕王建榮、林必窕和林慶福，「半導體平坦化CMP 技術」，二版，全華科技圖書股份有限公司，臺北市，(2000)。
〔32〕M. Kulawski, “Advanced CMP Processes for Special Substrates and for Device Manufacturing in MEMS Applications”, VTT Publications 611, 80 p.+ app. 60 p.,
Technical Research Centre of Finland, (2006).
〔33〕N. Sato, T. Yonehara, “Hydrogen Annealed Silicon-on-Insulator”, Applied Physics Letters, Vol. 65, Issue 15, pp. 1924-1926, (1994).
〔34〕S. S. Iyer and A. J. Auberton-Herv'e, Silicon Wafer Bonding Technology for VLSI and MEMS Applications, Inspec, London, (2002).
〔35〕T. Yonehara and K. Sakaguchi, “ELTRAN®; Novel SOI Wafer Technology”, JSAP International, No. 4, pp. 10-16, (2001).
〔36〕W. P. Maszara, et al., “Quality of SOI Film after Surface Smoothing with Hydrogen Annealing, Touch-Polishing”, SOI Conference, 1997. Proceedings., 1997 IEEE
International, pp. 130-131, (1997).
〔37 〕N. Sato, et al., “Suppression of Si Etching during Hydrogen Annealing of Silicon-on-Insulator”, SOI Conference, 1998. Proceedings., 1998 IEEE International, pp. 17-18, (1998).
〔38〕邱文俊，「KOH/醇類蝕刻液系統應用於單晶矽濕式蝕刻之研究」，國立清華大學，博士論文，(2004)。
〔39〕H. Wu, J.Cargo and M. White, “Characterization of Various Etching Techniques for Gate Level Failure Analysis and Substrate Decoration for Advanced Cu/low k Technologies”, Physical and Failure Analysis of Integrated Circuits, 2005. IPFA 2005.
Proceedings of the 12th International Symposium on the, pp. 242-248, Singapore, (2005).
〔40〕J. Ruzyllo et al., “Preoxidation UV Treatment of Silicon Wafers”, Journal of The Electrochemical Society, Vol.134, No.8,pp.2052-2055,(1987).
〔41〕S.L. Holl et al., “UV Activation Treatment for Hydrophobic Wafer Bonding”, Journal of The Electrochemical Society, May 5,pp.G613-616,(2006).
〔42〕V. S. Speriosu, B. M. Paine and M.-A. Nicolet, “X-Ray Rocking Curve Study of Si-Implanted GaAs, Si and Ge”, Applied Physics Letters, Vol. 40, Issue 7, pp. 604-606,
(1982).
〔43〕http://203.64.230.25/EM_folder/931215fareast3.pdf.
〔44〕小川洋輝，崛池靖浩著，「半導體潔淨技術」，顏誠廷譯，普林斯頓國際有限公司，臺北縣，(2003)。

指導教授

李天錫(Tien-Hsi Lee)

審核日期

2008-6-24

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