新型噴射磨料的開發及其應用於晶圓再生處理之研究

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姓名

楊子誼(Tzu-Yi Yang) 查詢紙本館藏

畢業系所

機械工程學系

論文名稱

新型噴射磨料的開發及其應用於晶圓再生處理之研究
(The Development of Novel Jet Abrasive and Application of Wafer Reclaim Process)

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摘要(中)

半導體產業日益發展使得矽晶圓使用量大增，衍生原物料短缺之問題。產業對晶圓再生利用的需求性與日俱增，而傳統的晶圓再生製程尚有環境性、加工性等問題急需解決。本研究主要針對磨料噴射加工法於晶圓表面異質層移除的缺點進行改善，因傳統磨料噴射撞擊會造成表面不平整，徒增後續處理之困擾。本研究擬研發微彈性的新型複合磨料，其具有吸收衝擊能量特性，希望藉此能有效改善加工過度、表面粗糙度的問題，進而降低後續製程處理成本。
研究主要分為兩大部分，第一部份為複合磨料的製備及加工性探討：將加熱後之碳化矽(SiC)披覆於聚苯乙烯(PS)球狀顆粒以製成新型複合磨料，實驗證明在設定溫度200℃及披覆粒徑#3000時可獲得形貌完整、披覆均勻的複合磨料，藉由加工性測試可發現複合磨料確實降低裂痕衍生的機率。第二部分則利用田口實驗設計針對晶圓表面異質層處理進行實驗，探討各參數對表面粗糙度與材料移除率的影響。經實驗結果得知，較佳製程參數組合為：披覆磨料號數#3000SiC、衝擊角度30°、噴射距離70mm、噴射壓力0.4MPa及旋轉平台轉速250rpm。可於5分鐘內將晶圓表面異質層完全去除，經EDS檢測證實無其他元素殘留，且達到表面粗糙度0.118 μm Ra。由實驗證明本研究所開發的複合磨料可完全移除晶圓表面異質層且獲得較佳的表面粗糙度。

摘要(英)

That the development of semiconductor industry flourishes vigorously makes the great use of Si wafer and that triggers the problems of original material shortage. The industry insistently demands the wafer reclamation, but the traditional wafer reclaiming process still has some environmental and processing problems. This research aims at improving the shortcomings of the abrasive jet machining working on the wafer surface hetero layer detachment, because the traditional abrasive jet machining could cause rough surface and afterward disturbance. The research plans to develop a new compound abrasive that has the absorption impact energy response in order to improve the problems of excessively processing and the surface roughness, then to reduce the cost of the following system regulation processing.
The study is divided into two parts. The first part focuses on the preparation of the new compound abrasive and the examination of the processing: The SiC is heated before coating on the polystyrene spherical pellet to make a new compound abrasive .The experiment proves that under the setting of temperature 200 ℃ and coating mesh size #3000 SiC, the result obtains the integrity of new compound abrasive .Based on the processing tests, the novel compound abrasive truly reduces the possibility of the cracks. The second part is to use the Taguchi method experiment on wafer surface hetero layer processing to discuss various parameters that influence the surface roughness and the material removal rate. The experiment proves that the good machining parameter combination is Abrasive mesh size 3000 SiC、Impact angle 30°、stand-off distance 70mm、Impact pressure 0.4 MPa and rotation platform speed 250 rpm. The wafer surface hetero layer is completely removed within 5 minutes and the EDS examination confirms that there are no other elements remained and the result also achieves the surface roughness 0.118 um Ra. The experiment proves that the novel compound abrasive can completely remove the hetero layer on wafer surface and obtain the better surface roughness.

關鍵字(中)

★ 精微噴射技術
★ 磨料噴射加工
★ 晶圓再生
★ 複合磨料

關鍵字(英)

★ precision abrasive jet technology
★ wafer reclaim
★ novel compound abrasive

論文目次

中文摘要 i
英文摘要 ii
誌　謝 iii
目　錄 iv
圖目錄 vii
表目錄 ix
第一章緒論 1
1-1 研究背景 1
1-2 研究動機與目的 3
1-3 研究方法 6
1-4 論文架構 8
第二章文獻回顧 9
2-1 磨料噴射加工法 9
2-2 田口實驗法探討 12
第三章實驗原理與設備 14
3-1 磨料噴射加工法 14
3-1-1 磨料噴射加工法基本原理 14
3-1-2 磨料噴射加工脆性材料移除機制 15
3-2 田口品質工程基本原理 16
3-3 實驗設備 20
3-3-1 實驗設備 20
3-3-2 量測觀察設備 23
3-4 實驗材料 26
第四章新型複合磨料之製備 27
4-1 研發需求及概念 27
4-2 製程開發及設備架構 31
4-2-1 實驗設備 31
4-2-2 實驗流程 33
4-3 結果與討論 34
4-3-1 基材選擇 34
4-3-2 磨料溫升曲線 35
4-3-3 披覆材粒徑之影響 36
4-3-4 成型設定溫度之影響 37
4-3-5 披覆材粒徑與成型均勻性之關係 38
4-4 新型複合磨料製備 39
4-5 新型複合磨料成型觀測 40
4-6 新型複合磨料加工性測試 41
4-6-1 定點噴射測試 41
4-6-2 矽基材單一刮痕測試 45
4-7 結論 48
第五章複合磨料運用精微噴射技術於晶圓再生處理 49
5-1 矽基材異質層處理 49
5-1-1 實驗設計規劃 49
5-1-1-1 因子水準設定 51
5-1-1-2 直交表配置 52
5-1-2 實驗結果分析 53
5-1-2-1 因子效果回應分析 53
5-1-2-2 變異數分析及F檢定 57
5-1-2-3 多品質特性參數組合 59
5-1-3 驗證實驗 60
5-2 單因子驗證 61
5-2-1 實驗條件與實驗規劃 61
5-2-2 噴射距離之影響 62
5-2-3 衝擊角度之影響 63
5-2-4 披覆粒徑之關係 65
5-2-5 噴射壓力之影響 66
5-2-6 平台轉速之影響 68
5-3 EDS 檢測 69
5-4 結論 70
第六章結論 71
參考文獻 72
個人簡歷 77

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指導教授

顏炳華(Ping-Hua Yan)

審核日期

2009-7-24

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