參考文獻 |
1.International Technology Roadmap for Semiconductors ITRS.
2.L. F. Thompson,C. G. Willson and M.J.Bowden.,Introduction to
Microlithography,ACS,Washington DC,1994.
3.E. Samaroo, J. Raamot, P. Parry and G.,Robertson.,Electron Lett.(8),
p. 2077, 1972.
4.E. Weber and R. Moore., Solid State Technol.(22), p. 61, 1979.
5.邱燦賓、施敏,"電子束微影技術",科學發展月刊,第28卷第6期,2000。
6.K.Suzuki,S.Matsui and Y.Ochiai., Sub-Half-Micron Lithography for ULSIs, Chapter 4,Cambridge University PressCambridge1999.
7.龍文安,積體電路微影製程,初版,高立圖書有限公司,台北,1998。
8.Y.Nakayama,S.Okazaki and N.Saitou.,Electron-beam Cell Projection Lithography:A New High-throughput Electro-beam Diret-Writing Technology Using a Specially Tailored Si Aperture, J.Vac.Sci.Technol., 6(6), 1836-1840(1990)
9.Y.Sakitani,H.Yoda,H.Todokoro,Y.Shibata,T.Yamazaki and K.Ohbitu., “Electron-beam Cell Projection Lithography” J. Vac. Sci. Technol.,10(6), 2759-2763 (1992)
10.T.B.Chiou,P.Hahmann,M.C.Liaw,T.Y.Huang and M.S,”Evaluation of Fine Pattern Definition with Electron-Beam Direct Writing Lithography” J.SPIE Vol. 3997, 646-657 (2000)
11.吳玫貞, 電子束微影鄰近效應參數測定與鄰近效應修正之研究,交通大學應化所碩士論文, 1997.
12. T. H. P. Chang,Proximity Effect in Electron-Beam Lithography, J.
Vac. Sci. Technol.”B, Vol. 12, No. 6, p. 1271, 1975.
13.S.A.Rishton and D.P.Kern,Point Exposure Distribution Measurements for Proximity Correction in Electron Beam Lithography on a Sub-100 nm Scale,J. Vac. Sci. Technol., 5(1), 135-141 (1987)
14S. J. Wind,M.G.Rosenfield,G.Pepper,W.W.Molzen and P.D.Gerber, "Proximity Correction for Electron Beam Lithography Using a Three-Gaussian Model of the Electron Energy Distribution, J.Vac. Sci. Technol., 7(6), 1507-1512 (1989)
15.Stevens L.,Jonckheere R.;Froyen E.;Decoutere S.; Lanneer D.,etermination of the Proximity Parameters in Electron Beam Lithography Using Doughnut-Structures.,J.Microelectronic EngineeringVol. 54, p. 141, 1986.
16. Akio Misaka, Kenji Harafuji, and Noboru Nomura.,Determination of Proximity Effect Parameters inElectron-Beam Lithography.,J. Appl. Phys., Vol. 68, No. 12, p. 6472,1990.
17Aya Sunao.,Kise Koji.;Yabe Hideki and Marumoto Kenji.,Validity of Double and Triple Gaussian Functions for Proximity Effect Correction in X-ray Mask Writing,Jpn. J. Appl. Phys, Part 1,Vol. 35, No. 3,p1929-1936
,1996.
18 Watson,G. Patrick;Fu, Diana, Berger, Steven D., Tennant, Donald, Fetter, Linus; Novembre, Anthony, Biddick and Christopher.,
Measurement of the Backscattered Coefficient Using Resist Response Curves for 20-100 keV Electron Beam Lithography on Si,J. Vac. Sci. Techonl., B, Vol. 14, No. 6, p. 4277,1996.
19. Lu Wu,ShenHaoying Y.,TaoJingxin X., Gu Ning and Wei Yu.,Improved Proximity Correction Algorithm for Electron-Beam Lithography, J.Proc. SPIE, Vol. 2194, p. 323, 1994.
20. Tamura Takao, Nakajima Ken, Nozue Hiroshi.,Improved Proximity Effect Correction Technique Suitable for Cell Projection Electron Beam Direction Writing System, Jpn. J. Appl. Phys., Part 1, Vol. 33, No.12B,
p.6953, 1994.
21Fujino Takeshi,Maeda Hiroshi,Moriizumi Koichi, Kato Takaaki and Tsubouchi Natsuro.,Application of Proximity Effect Correction Using
Pattern-Area Density to Patterning on a Heavy-Metal Substrate and
Cell-Projection Exposure, Lpn. J. Appl. Phys., Part 1, Vol. 33, No.12,B
,p. 6946, 1994.
22. Waas, T. Eisenmann, H.Voellinger, O.and Hartmann H.,Proximity Correction for High CD Accuracy and Process Tolerance,Microelectronic Engineering”Vol. 27, p. 179,1995.
23. Geraint Owen and Paul Rissman.”Proximity Effect Correction for Electron Beam
Lithography by Equalization of Background Dose”J. Appl. Phys.,Vol. 54, No. 6, p. 3573, 1983.
24.K.Morizumi and A. N. Broers.,Tolerance on Alignment Error in GHOST Proximity Effect Correction,J. Vac. Sci. Technol., B, Vol. 11, No. 6, p. 2114, 1993.
25.M.A.Gesley and M.A.McCord.,100 kV GHOST Electron Beam Proximity Correction on Tungsten X-ray Masks.,J. Vac. Sci. Technol., B, Vol.12, No. 6, p. 3478, 1994.
26. Vachette, Thierry, G. Paniez, Patrick, J.Lalanne, Frederic and Madore Michel.,Proximity E-Beam Exposure in Submicron Patterns Using a Silylation Process.,Microelectronic Engineering,Vol. 13, p. 205, 1991.
27.M. M. Ahmed and H.ahmed.,Novel Electron Beam Lithography Technique Novel Electron Beam Lithography Technique for Submicron T-Gate Fabrication,J. Vac. Sci. Technol., B, Vol. 15,No. 2, p.306, 1997.
28. Kee W. Rhee, David I Ma, and Martin C. Peckerar.,Proximity Effect Reduction in X-ray Mask Making Using Thin Silicon Dioxide Layers,
J.Vac.Sci.Technol.,B,Vol. 10, No. 6, p. 3062,1992.
29 E. A. Dobisz, C. R. K. Marrian, L. M. Shirey, and M. Ancona.,Thin Silicon Nitride Films for Reduction of Linewidth and Proximity Effect in Electron-Beam Lithography,J. Vac. Sci. Technol., B, Vol. 10, No. 6,
p.3067-3071, 1992.
30. E. A. Dobisz, C. R. K. Marrian, R. E. Salvino, M. A. Ancona, and F. K. Perkins.,Reduction and Elimination of Proximity Effects,J. Vac. Sci. Technol., B, Vol. 11, No. 6, p. 2733, 1993.
31.C.T.Pan and M.F.Chen.,An efficient method to improve the proximity effect for electron beam optical disc mastering,J. Nanotechnology, v 16, n 4, April, p 410-416,2005
32..邱士峰,低表面能材料於超疏水表面製備與奈米壓印微影技術之應用.,中央大學化材所碩士論文,2005.
33. S. W. Park, J. Kim and Soo Hong Lee.,Application of Acid Texturing
to Multi-Crystalline Silicon Wafers,Korean Physical Society Vol. 43,
No.3, September, pp. 423-426,2003
34. B.M. Damiani1, R. Liidemann ,D.S. Ruby, S.H. Zaidi and A. Rohatgi
,Developement Of RIE-Textured Silicon Solar Cells, Georgia Institute of Technology,777 Atlantic Drive, Atlanta, GA 30332-0250
35. 洪士庭,研製次波長結構之負折射率光子晶體透鏡及太陽能電池抗反射層”國立清華大學原子科學系碩士論文,2005
36. Soon Ho Kim, Sung-Woon Choi, and Jung-Min Sohn.,Mask process proximity correction for next-generation mask fabrication, J. Vac. Sci. Technol.,Volume 21, Issue 6, pp.3041-3045,2003
37. S. Henning and L. Svensson, Production Of Silica Aerogel, Phys. Scripta 23 (1981) 697.
38. L. W. Hrubesh and J. F. Poco, Thin aerogel films for optical, thermal, acoustic and electronic applications, Journal of Non-Crystalline Solids, v 188, n 1-2, Jul 2, p 46,1995 |