以非晶化及再結晶消除奈米尺度矽晶薄膜之晶格缺陷

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姓名

張祐綸(You-lun Zhang) 查詢紙本館藏

畢業系所

機械工程學系

論文名稱

以非晶化及再結晶消除奈米尺度矽晶薄膜之晶格缺陷
(Crystallographic Defect Elimination of Silicon Nano-Membrane by Amorphousization and Recrystallization)

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★ 熱力微照射製作絕緣層矽晶材料之研究	★ 微波活化對被植入於矽中之氫離子之研究
★ 矽/石英晶圓鍵合之研究	★ 奈米尺度薄膜轉移技術
★ 光能切離矽薄膜之研究	★ 氮矽基鍵合之研究

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摘要(中)

本研究目標為使用智切法技術製作超薄絕緣層矽晶材料，其矽薄膜厚度低於100奈米，因離子佈植能量受限，要製作100奈米的矽薄膜必須配合犧牲層技術，在此厚度下矽薄膜會因離子佈植而產生晶格缺陷，因此本論文核心為透過非晶化及再結晶去修復矽薄膜中的晶格缺陷，以雲式離子佈植取代離子束佈植以達到非晶化矽薄膜的效果，並討論不同薄膜轉移條件下對於矽薄膜再結晶的影響，再結晶時的實驗參數包含溫度、時間、環境氣氛，經過再結晶後的試片以X光繞射測得其晶體結構為單晶矽薄膜，此實驗理論基礎為結晶動力學，本研究成果對於未來製作超薄絕緣層矽晶材料的相關研究深具啟發意義，並有助於解決半導體製程尺寸微縮的問題。

摘要(英)

The goal of this research is to use Smart-Cut to produce ultra-thin Silicon-on-Insulator. The thickness of silicon film is less than 100 nm which is due to the energy constrained from ion implantation. In order to make a 100 nm, sacrificial layer technology must be used because of the thickness of the silicon ion implantation to produce lattice defects. Therefore, the aim of this research is to repair defects in the crystal lattice of silicon thin film by amorphousization and recrystallization, to use the Ion-Shower implanter to replace the Ion-Beam implanter in order to achieve amorphous silicon films and discuss the impact of the transfer film silicon thin film under different conditions recrystallization. The experimental parameters comprise temperature, time, and atmosphere. After recrystallization specimen obtaining from crystal X-Ray diffractometer, the results showed that it’s single-crystal silicon thin film structure. This theoretical basis of this experiment is for the kinetics of crystallization. The research findings is helpful for future production of ultra-thin Silicon-on-Insulator material inspirational significance and help solve scaling down the size of the semiconductor manufacturing process problems.

關鍵字(中)

★ 智切法
★ 絕緣層矽晶材料
★ 非晶化
★ 再結晶

關鍵字(英)

論文目次

目錄
中文摘要 I
英文摘要 II
致謝 III
目錄 IV
圖目錄 VI
表目錄 VIII
第一章緒論
1.1研究背景 1
1.2研究動機與目的 4
第二章原理與文獻回顧
2.1智切法製程製作薄膜之非晶化現象 13
2.2氣泡與微裂縫形成機制 16
2.3晶體結構再結晶機制 19
第三章實驗準備與研究流程
3.1實驗試片製備 24
3.1.1晶圓清洗 24
3.1.2沉積氧化層 24
3.1.3沉積多晶矽犧牲層 25
3.1.4雲式離子佈植注入氫離子 26
3.1.5移除多晶矽犧牲層 27
3.2晶圓鍵合 28
3.3薄膜轉移 28
3.3.1透過高溫熱處理 29
3.3.2透過低溫熱處理 29
3.3.3透過微波 29
3.4薄膜再結晶 29
3.5實驗器材與檢測儀器 30
第四章實驗結果與討論
4.1氫離子濃度分布在活化過程中造成晶格缺陷之討論 37
4.2熱處理消除晶格缺陷之討論 37
4.3於再結晶過程非晶化對消除晶格缺陷之影響 39
第五章結論 51
參考文獻 53

參考文獻

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指導教授

李天錫

審核日期

2014-6-16

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