標準CMOS製程結合後製程之850-nm矽累崩光檢測器

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黃智愛(Chih-Ai Huang) 查詢紙本館藏

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電機工程學系

論文名稱

標準CMOS製程結合後製程之850-nm矽累崩光檢測器
(850-nm Si Avalanche Photodiodes in Standard CMOS Technology with Back-end Process)

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摘要(中)

本論文利用0.18 µm標準CMOS製程結合後製程實現850-nm矽累崩光檢測器，為了排除基板空乏區外照光而產生之擴散載子，利用後製程來蝕刻元件之背面基板，達到直接排除擴散載子之效果。透過Silvaco公司之二維元件模擬軟體研究，基板厚度的減少可改善擴散載子造成之頻率響應滑落(roll-off)的情形，進而提升3-dB頻寬。同時針對不同的元件結構設計，分別為水平式之累崩光檢測器以及P-I-N結構之光檢測器，將其操作在累崩區來做比較。最後並接著針對矽累崩光檢測器之吸光區尺寸作進一步的分析，透過金屬層區隔累崩區及吸光區，隨著吸光區寬度的減少，所收集到的光電流中擴散載子成份也會下降，使得元件之3-dB頻寬提升至8 GHz。另外也利用光脈衝響應之量測，研究不同元件對脈衝的反應，分析出長尾巴效應(long tail effect)的存在與頻寬的關係。

摘要(英)

This study presents lateral avalanche photodetectors (APDs) implemented in standard 0.18 µm CMOS technology operating at 850-nm wavelength. In order to reduce the slow diffusion carriers generated within the Si substrate, it is necessary to utilize simple back-end processes after standard CMOS process to remove thick Si substrate. Silvaco TCAD simulation is used to verify that the diffusion roll-off in APD could be improved by reducing the diffusion component of photo-current by thinning the Si substrate. Furthermore, this study compared different device structures including avalanche photodetectors and P-I-N photodetectors after substrate thinning. Finally, the different absorption region widths of APDs are discussed. While the absorption region width decreased, the amount of diffusion carriers is reduced in photo-current and thus achieved 3-dB bandwidth of 8 GHz. Besides, long tail effect in connection with frequency response can be verified by the pulse measurement.

關鍵字(中)

★ 光檢測器
★ 標準CMOS製程
★ 後製程

關鍵字(英)

★ Photodiodes
★ CMOS
★ Back-end Process

論文目次

摘要 i
Abstract ii
致謝 iii
圖目錄 vi
表目錄 xi
第一章導論 1
1.1 研究動機 1
1.2 相關研究發展 6
1.3 論文架構 16
第二章光檢測器簡介 18
2.1 簡介 18
2.2 基本原理及特性 18
2.2.1 光檢測器工作原理 18
2.2.2 響應度及累崩增益 20
2.2.3 響應時間分析 23
2.2.4 雜訊分析 24
2.3 以標準CMOS製程實現光檢測器 25
2.4 結論 30
第三章標準CMOS製程結合後製程之累崩光檢測器 31
3.1 簡介 31
3.2 元件模擬及設計 31
3.2.1 頻率響應之分析 31
3.2.2 元件特性比較 35
3.2.3 元件設計與CMOS製程 38
3.3 後製程介紹 41
3.3.1 蝕刻方法 41
3.3.2 元件特性之影響 45
3.4 元件量測結果 50
3.4.1 元件直流特性及響應度 50
3.4.2 元件頻率響應及光脈衝響應 58
3.4.3 元件雜訊 63
3.4.4 元件特性整理 65
3.5 結論 66
第四章累崩光檢測器之吸光區分析 68
4.1 簡介 68
4.2 元件設計 68
4.3 元件量測結果 70
4.3.1 元件直流特性及響應度 71
4.3.2 元件頻率響應及光脈衝響應 79
4.3.3 元件雜訊 83
4.3.4 元件特性整理 84
4.4 元件模擬驗證 86
4.5 結論 88
第五章總結 90
參考文獻 91
附錄 94

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指導教授

辛裕明(Yue-ming Hsin)

審核日期

2014-8-19

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