創新進氣擴散系統設計開發– 檔板與垂直噴流設計於水平進氣式腔體

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姓名

林雋幃(Chun-Wei Lin) 查詢紙本館藏

畢業系所

機械工程學系

論文名稱

創新進氣擴散系統設計開發– 檔板與垂直噴流設計於水平進氣式腔體
(Modeling and Design a New Gas Injection Diffusion System by Barrier and Purge on Horizontal MOCVD Reactor)

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摘要(中)

有機金屬化學氣相沉積法（Metal–Organic Chemical Vapor Deposition, MOCVD）為目前製作LED最重要的技術之一，藉由通入有機金屬源與V族氣體於真空的反應腔體，反應源於高溫的旋轉載台上反應成膜，其中進氣系統與反應腔體的設計將影響成膜均勻性與成長速率。本研究採用ANSYS Fluent進行模擬分析，探討現有Veeco垂直進氣式與Aixtron行星式反應腔體之熱流場現象，並於Aixtron自旋長率的部分提出以預測的方式計算，大量縮短運算的時間與效能需求，預測所得結果與文獻結果非常吻合。本論文探討熱輻射對於Veeco腔體的影響，得知熱輻射為MOCVD腔體中主要的熱傳方式之ㄧ，而熱傳的大小將影響長率的結果。Aixtron腔體部分，先進行參數探討，了解各操作參數下腔體之熱流場行為，之後再藉由設計檔板與垂直噴流於常壓環境，此創新進氣系統設計能使腔體在常壓下進行製程，且不需自旋即可達到好的成膜均勻性與成長速率。

摘要(英)

Metal–Organic Chemical Vapor Deposition, MOCVD, is one of the most important technologies to manufacture the LED. By introducing MO source and group V gas into the reactor, then deposits the thin film on the high temperature susceptor. The key components, a gas injection system and the reactor design, play a crucial role in the epitaxial growth rate and uniformity of thin film. In this study, we report a new method to predict the growth rate for Aixtron reactor. The prediction growth rate is in agreement with the previous reported result. In this paper, we also found that the radiation effect has a significant on the growth rate. Finally, we do the parameter analysis to realize the chamber characteristic for Aixtron reactor. Then, we design a new injection system that combines the barrier and purge design to enhance the growth rate and improve the uniformity without wafer spin. Additionally, the new design of MOCVD reactor could be used to epitaxy thin film at atmospheric pressure.

關鍵字(中)

★ 有機金屬化學氣相沉積法
★ 垂直進氣式腔體
★ 行星式反應腔體
★ 熱輻射
★ 檔板設計
★ 垂直噴流設計

關鍵字(英)

★ MOCVD
★ LED
★ Radiation
★ ANSYS Fluent

論文目次

摘要 I
Abstract II
致謝 III
目錄 IV
圖目錄 VII
表目錄 XI
符號說明 XII
一、緒論 1
1.1 前言 1
1.2 MOCVD反應腔體介紹 2
1.3 文獻回顧 4
1.4 研究動機與內容 7
二、基礎理論 8
2.1 腔體熱流場理論 8
2.1.1 熱質傳耦合效應 8
2.1.2 輻射熱傳現象 9
2.1.3 熱流場穩定理論 10
2.2 薄膜沉積理論 12
2.2.1 氣體傳輸機制 12
2.2.2 薄膜沉積反應機制 12
2.3 數值模擬方法 13
2.3.1 數值模擬軟體介紹 13
2.3.2 有限體積法 14
2.3.3 SIMPLE法 16
2.3.4 統御方程式 19
2.3.5 基本假設與邊界條件 20
2.4 混和氣體與固體材料性質 24
2.5 薄膜成長速率計算 27
2.6 自旋成長速率預測計算 28
2.7 網格獨立分析 31
三、結果與討論 34
3.1 Veeco E300 Turbodisc腔體熱輻射效應的影響 34
3.1.1 各輻射模型下的溫場分布 34
3.1.2 各輻射模型下的熱通量分布 35
3.1.3 無因次參數分析 36
3.1.4 小結 42
3.2 Aixtron G2 planetary腔體熱流場與製程參數分析 43
3.2.1 熱輻射對於Aixtron G2 planetary腔體的影響 43
3.2.2 基礎熱流場分析 44
3.2.3 H2 / TMG流率的影響 45
3.2.4 NH3流率的影響 47
3.2.5 腔體壓力的影響 49
3.2.6 小結 51
3.3 創新檔板與垂直噴流設計 52
3.3.1 檔板設計於水平進氣式腔體之影響 52
3.3.2 垂直噴流設計於水平進氣式腔體之影響 55
3.3.3 創新檔板與垂直噴流設計於水平進氣式腔體之影響 58
3.3.4 小結 61
四、結論 63
參考文獻 65

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指導教授

蕭述三(Shu-San Hsiau)

審核日期

2014-7-22

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