博碩士論文 85246001 詳細資訊




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姓名 田春林(Shun-Lin Tian)  查詢紙本館藏   畢業系所 光電科學與工程學系
論文名稱 光學薄膜應力與熱膨脹係數量測之研究
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摘要(中) 本論文提出一種創新的薄膜應力與熱膨脹係數的量測方法,此方法結合相位偏移干涉術及五步相位還原法,利用一種單面拋光的玻璃圓片為基板。基於光學干涉原理將干涉圖轉換為相位圖後,可獲致基板面形的偏移量,此法可精確測定基板在鍍膜前後的面形變化量,據此計算薄膜的平均應力值。此外,利用Zernike多項式擬合法,可得鍍膜前及鍍膜後基板的三維表面輪廓圖,扣除人為誤差項之後可得實際膜面的三維表面輪廓圖及二維應力分佈圖,並可判定薄膜沈積後的應力型態,有助於改善鍍膜品質。本文所提出的方法比其它的量測技術更為簡單、便捷且更為精確。
為研究光學薄膜的力學性質,以離子束濺鍍法製鍍五種金屬氧化膜,應用相移干涉術可同時測定薄膜的熱膨脹係數及彈性模量,利用BK-7和Pyrex兩種材質的玻璃基板,已知其熱膨脹係數、楊氏係數及帕松比,測量金屬氧化膜的應力對溫度變化之關係。將薄膜樣品從室溫加熱至70°C,可分別測得金屬氧化膜同時沈積在BK-7和Pyrex基板的內應力對量測溫度之關係圖,以最小平方法進行線性擬合,從兩直線的斜率即可求得熱膨脹係數和彈性模量。在光學薄膜應力檢測的實驗中,分別探討各種氧化膜的應力行為,最後並建立薄膜應力及熱膨脹係數的資料庫,以提供製鍍光纖通訊用之次奈米窄帶干涉濾光片最佳製程參數。
本論文已成功地研發一套薄膜應力與熱膨脹係數量測系統,其優點為高靈敏度、高精度、操作簡便且重現性高。尤其是系統擴充為控制溫度變化可應用於熱膨脹係數及彈性膜量之測定,在光學薄膜力學性質的研究上極為有用。
摘要(英) This dissertation presents an original method for the measurement of the stress and the thermal expansion coefficient of optical thin films. The measuring method based on the phase shifting interferometry technique and five-step phase reduction algorithm. A circular disk polished on one side was used as the coated substrate during film deposition. The average stress in thin films can be derived by comparing the deflection of the substrate before and after film deposition. The deflection of the substrate by the deposited film was obtained by the phase map. Wavefront aberrations from tilt and defocus should be removed by fitting the Zernike polynomials. Using the Zernike polynomial fitting algorithm, a three-dimensional contour map and two-dimensional stress distribution were generated from the polynomial coefficients to visualize the deformation of the thin film and to examine the tensile or compressive stress after film deposition. The proposed method can facilitate the development of processes that yield more uniform films. Compared with other techniques, the present method is relatively simple, convenient and more accurate.
To investigate the mechanical properties of metal oxide films, five oxide films were prepared by ion-beam sputter deposition (IBSD). This dissertation also reports on the application of the phase shifting interferometry technique for the concurrent measurement of the thermal expansion coefficient and the elastic modulus of optical thin films. The stresses in metal oxide films were measured with the phase shifting interferometry technique using two types of circular disks with known thermal expansion coefficients, Young’s moduli and Poission’s ratios. The temperature-dependent stress behavior of metal oxide films was obtained by heating samples in the range from room temperature to 70 °C. The internal stresses of optical thin films deposited on the BK-7 and Pyrex glass substrates were plotted against the stress measurement temperature, showing a linear dependence. The slope of the line for the difference data was determined by least squares fitting. From the slopes of the two lines in the stress versus temperature plot, the intrinsic stress, the thermal expansion coefficient and the elastic modulus of thin oxide films are then determined. The experiment results of the stress behavior in metal oxide films were given. Finally, the database of the stress and the thermal expansion coefficient of optical thin films were established. It can provide the optimum deposition parameters to manufacture subnanometer bandwidth interference filters used for fiber-optic communication.
A novel measurement system for determining stress and thermal expansion coefficient of optical thin films has been successfully developed and constructed. It has the advantages of inherently high sensitivity, accuracy, easy operation and reproducible performance. In particular, it can be extended to varying-temperature applications and very useful in determining the mechanical properties of optical thin films.
關鍵字(中) ★ 相位偏移干涉術
★ 熱膨脹係數
★ 應力
★ 薄膜
★ 金屬氧化膜
關鍵字(英) ★ thermal expansion coefficient
★ stress
★ optical thin films
★ phase shifting interferometry
★ metal oxide films
論文目次 封面
中文摘要
英文摘要
誌謝辭
目錄
圖目錄
表目錄
符號說明
第一章 緒論
1-1 研究動機
1-2 研究方法
1-3 論文架構
第二章 基本理論
2-1 薄膜應力
2-2 文獻回顧
2-3 理論探討
2-3-1 薄膜內應力
2-3-2 薄膜中的雙軸應力
2-3-3 能量法推導單層膜應力公式
2-3-4 熱應力之探討
2-4 內應力的成因
第三章 薄膜應力量測技術
3-1 前言
3-2 文獻回顧
3-3 傳統的應力量測方法
3-3-1 懸臂樑法
3-3-2 牛頓環法
3-3-3 X光繞射法
3-3-4 雷射干涉法
3-4 雷射光槓桿技術
3-5 光學式懸臂樑法
3-6 相位偏移干涉法
3-7 綜合比較
第四章 薄膜熱膨脹係數及彈性模量之量測
4-1 文獻回顧
4-2 熱膨脹係數對薄膜溫度穩定性之影響
4-3 薄膜熱膨脹係數與彈性模量量測方法
第五章 相位偏移式應力量測系統研製
5-1 研發背景
5-2 相位量測干涉術
5-2-1 相位量測原理
5-2-2 相位量測誤差分析
5-3 應力量測系統研製
5-3-1 系統硬體架構
5-3-2 相位還原演算
5-3-3 Zernike多項式擬合
5-3-4 系統誤差分析
5-3-5 應力量測實例
5-4 熱膨脹係數與彈性模量之測定
5-4-1 基本原理
5-4-2 量測方法
5-4-3 Ta2O5薄膜量測實例
第六章 實驗結果與討論
6-1 實驗方法
6-1-1 薄膜樣品之製鍍
6-1-2 膜厚之測定
6-1-3 薄膜微結構之量測
6-2 單層膜應力量測
6-2-1 不同的鍍膜技術對氧化膜應力之影響
6-2-2 基板對氧化膜應力之影響
6-2-3 濺鍍氣壓對氧化膜應力之影響
6-2-4 離子束轟擊能量對氧化膜應力之影響
6-2-5 熱效應對氧化膜應力之影響
6-2-6 測鍍彈射角對氧化膜應力之影響
6-3 多層膜應力量測
6-4 金屬氧化膜熱膨脹係數之量測
第七章 結論
參考文獻
參考文獻 1.J. Minowa and Y. Fujii, “Subnanometer bandwidth interference filter for optical fiber communication systems”, Appl. Opt., 27, pp.1385-1386, 1988.
2.H. Takashashi, “Temperature stability of thin-film narrow-bandpass filters produced by ion-assisted deposition”, SPIE Vol. 2253, pp. 1343-1353,1994.
3.H. Takashashi, “Temperature stability of thin-film narrow-bandpass filters produced by ion-assisted deposition”, Appl. Opt.,34, pp. 667-675,1995.
4.A. Zoller, R. Gotzelmann, K. Matl, and D. Cushing, “ Temperature-stable bandpass filters deposited with plasma ion-assisted deposition”, Appl. Opt. , 35, pp. 5609-5612, 1996.
5.A. Zoller, R. Gotzelmann, and K. Matl, “Shift free interference coatings deposited with plasma ion assisted deposition”, presented at the OIC 95, Tucson, Arizona, 1995.
6.R. W. Hoffman, in Physics of Thin Films, Vol. 3, Academic Press: New York, p.211, 1966.
7.D.S. Campbell, Mechanical Properties of Thin Films, in Handbook of Thin Film Technology, L. I. Maissel and R. Glang ed., McGRAW-HILL Book Company, New York, Ch.12, 1970.
8.E. Kobeda and E.A. Irene,”In situ stress measurements during thermal oxidation of silicon”, J. Vac. Sci. Technol., B7,pp.163-166,1989.
9.G. J. Leusink, T. G. M. Osterlaken, G. C. A. M. Janssen, and S. Radelaar,”In situ sensitive measurement of stress in thin films”, Rev. Sci. Instrum. 63, pp.4143-3144,1992.
10.A. K. Sinha, H. J. Levistein, and T. E. Smith, “Thermal stresses and cracking resistance of dielectric films on Si Substrates.”, J. Appl. Phys., 49, pp.2423-2426, 1978.
11.W. D. Nix, “ Mechanical Properties of thin films”, Metallurgical Trans., A20, pp.2217-2245, 1989.
12.D. S. Gardner and P.A. Flinn, “Mechanical stress as a function of temperature for aluminum alloy films, “ J. Appl. Phys., 67, pp.1831-1843,1990.
13.Chuen-Lin Tien, Cheng-Chung Lee and Cheng-Chung Jaing “ The measurement of thin film stress using phase shifting interferometry”, J. Mod. Opt. 47, 839-849 ,2000.
14.Chuen-Lin Tien, Cheng-Chung Jaing, Cheng-Chung Lee and Kie-Pin Chuang ” Simultaneous determination of the thermal expansion coefficient and the elastic modulus of Ta2O5 thin film using phase shifting interfurometry”, accepted by J. Mod. Opt. on Mar. 16, 2000.
15.Chuen-Lin Tien, Cheng-Chung Lee and Kie-Pin Chuang “An improved interferometric method for determining mechanical properties of thin films” accepted by SPIE Photonics Taiwan Conferences, No.7048-65, 2000.
16.R. W. Hoffman, in physics of nonmetallic Thin Films, edited by C. H. S. Dupuy and A. Cachard, Plenum Press: New York, p.273, 1976.
16.K. L. Chopra, Mechanical effects in thin films, in Thin Film Phenomena, p.266, McGRAW-HILL : New York, 1969.
17.G. Gore, “On the Properties of Electro-deposited Antimony”, Trans. Roy. Soc. (London), Part 1, p.185, 1858.
18.E. J. Mills, “On Electrostriction”, Proc. Roy. Soc, 26, p.504,1877.
19.G. G. Stoney. “The tension of metallic films deposited by electrolysis”, Proc. Roy. Soc., A82, pp.172-175,1909.
20.K. G. Soderberg and A. K. Graham, “Stress in electro-deposits -Its significance”, Proc. Am. Electroplater’s Soc. ,34, p.97,1947.
21.R. H. D. Barklie and H. J. Davies, “The effect of surface conditions and electrodeposited metal on the resistance of materials to repated stress”, Proc. Inst. Mech. Eng.,p.2 731,1930.
22.C.E. Heussner, A. R. Balden, and L. M. Morse, “Stress Data on Copper Deposits from Alkaline Baths”, Plating ,35, p.719, 1948.
23.A. Brenner and S. Senderoff, “ Calculation of stress in electrodeposits from the curvature of a plated strip “, J. Research of the Nat’l. Bureau of U. S. Standards, 42 (Research paper RP1954), pp. 105-123, 1949.
24.N. N. Davidenkov, “Measurement of residual stress in electrolytic deposits”, Sov. Phys. , 2, pp.1595-2598 ,1961.
25.M. Ohring, The Materials Science of Thin Films, Academic Press:San Diego, p.407, 1992.
26.D. S. Gardner and P.A. Flinn, “Mechanical stress as a function of temperature for aluminum alloy films, “ J. Appl. Phys., 67, pp.1831-1843,1990.
27.K. Kinosita, K. Maki, K. Nakamizo, and K. Takeuchi, “ Stress in vacuum deposited films of silver,” Jpn. J. Appl. Phys., 6, pp. 42-53, 1967.
28.J. D. Wilcock,” Stress in thin films”, Ph. D. Dissertation, Electrical Engineering Department, Imperial College, London University, London, 1967.
29.E. Bauer, A.K. Green, and K. M. Kunz, “The formation of thin continuous films from isolated nuclei,” in Basic Problems in Thin Film Physics, edited by R.Niedermager and H. Mayer, Vandenhoeck and Ruprecht: Gottingen, pp. 135-151, 1966.
30.E. Klokholm and B. S. Berry, “Intrinsic stress in evaporated metal films, “ J. Electrochem. Soc., 115, pp. 823-826, 1968
31.R.W. Hoffman, “Stress in thin films: the relevance of gain boundaries and impurities”, Thin Solid Films, 34, pp185-190, 1976.
32.P. A. Alexander and R. W. Hoffman, “Effect of impurities on intrinsic stress in thin Ni films”, J. Vac. Sci. Tech., 13, pp. 96-98 (1976).
33.F. M. D’Heurle,” Aluminum films deposited by rf sputtering”, Metallurgical Transactions, 1, pp. 725-732,1970.
34.K. H. Muller, “Stress and microstructure of sputter-deposited thin films: Molecular dynamics investigations” J. Appl. Phys., 62, pp. 1796-1799, 1987.
35.H. Windischmann, “An intrinsic stress scaling law for polycrystalline thin films prepared by ion beam sputtering”, J. Appl. Phys.,.62, pp.1800-1807, 1987.
36.C. A. Davis , “A simple model for formation of compressive stress in thin films by ion bombardment “, Thin Solid Films, 226, pp3-14, 1993.
37.R. W. Hoffman and E. C. Crittenden,”Determination of stress in evaporated metal films”, Phys. Rev.,78, pp.349-350,1950.
39.E. Klokholm,”An apparatus for measuring stress in thin films”, Rev. Sci. Instrum. ,40, pp.1054-1058,1969.
40.M. Laugier, “An analysis of the cantilevered plate method of thin film intrinsic stress determination” Thin Solid Films,66, pp. L7-L10,1980.
41.S. N. Sahu, J. Scarminio, and F. Decker, ”A laser beam deflection system for measuring stress variations in thin film electrodes” , J. Electrochem. Soc.,137, pp1150-1154,1990.
42.B. C. Bell and D. A. Glocker, “ In situ measurements of film stress in Al N sputtered onto moving substrates”, J. Vac. Sci. Technol., A9, pp. 2437-2441, 1991.
43.G. Moulard, G. Contoux, G. Gardet, G. Motyl, and M. Courbon, “An improved optical cantilever technique using image processing for measuring in situ stress in thin films”, Surface and Coatings Technology, 97, pp.206-211, 1997.
44.J. D. Finegan and R. W. Hoffman, “Stress anisotropy in evaporated Iron films”, J. Appl. Phys., 30, pp.597-598, 1959.
45.J. A. Aboaf, ”Stress in SiO2 films obtained from the thermal decomposition of tetraethylorthosilicate-effect of heat-treatment and humidity”, J. Electrochem. Soc.:Solid State Science, 116, pp.1732-1736, 1969.
46.S. M. Rossnagel, P.Gilstrap, and R. Rujkorakarn, “Stress measurement in thin films by geometrical optics”, J. Vac. Sci. Technal., 21(4), pp1045-1046,1982.
47.A.E. Ennos, “Stress developed in optical film coatings”, Appl. Opt., 5, pp.51-61, 1966.
48.K. Roll and H. Hoffmann, “Michelson interferometer for deformation measurements in an UHV system at elevated temperatures”, Rev. Sci. Instrum., 47, pp1183-1185, 1976
49.M. Miyagi and N. Funakoshi, “ Internal stress and thermal expansion coefficient of Gda-Si films”, Jpn. J. Appl. Phys., 20, pp. 289-290, 1981.
50.H. Leplan, B. Greenen, J. Y. Robic and Y.Pauleau”, Residual stresses in silicon dioxide thin films prepared by reactive electron beam evaporation”, SPIE Vol. 2253, pp. 1263-1274, 1994
51.E. Kobeda and E.A. Irene,”A measurement of intrinsic SiO2 film stress resulting from low temperature thermal oxidation of Si”, J. Vac. Sci. Technol. B4,pp720-722,1986.
52.T. Aoki, Y. Nishikawa and S. Kato, “An improved Optical lever technique for measuring film stress “, Jpn. J. Appl. Phys.,28, pp.299-300,1989.
53.D. S. Gardner and P.A. Flinn, “Mechanical stress as a function of temperature for aluminum alloy films “, J. Appl. Phys., 67, pp1831-1843,1990.
54.F. P. Chiang and T. Y. Kao, “ An optical method of generating slope and curvature contours of bent plates,” Int. J. Solids Structures, 15, pp. 251-260, 1979.
55.A. Segmuller, J. Angilelo and S.J. Laplaca “Automatic X-ray diffraction measurement of the lattice curvature of substrate wafers for the determination of linear strain pattern”, J. App. Phys.,51, pp. 6224-6230,1980.
56.N. Honda, F. Shoji, S. Kidoguchi, Y. Hamada, M. Nagata, and K. Oura, “ In situ stress measurements of sputter deposited films,” Sensor and Actuators, A62, pp. 663-667, 1997.
57.S. Webster, D.N. Batchelder, and D.A. Smith,”Submicron resolution measurement of stress in silicon by near-field Raman spectroscopy”, App. Phys. Lett., l72, pp.1478-1480, 1998.
58.E. Suhir, “An Approximate analysis of stresses in multi-layered elastic thin films”, J. Appl. Mechanics, 55, pp.143-148, 1988.
59.R. Lathlaen and D. A. Diehl, “ Stress in thin films of silane vapor-deposited silicon dioxide,” J. Electrochem. Soc :Solid State Science,116, pp. 620-622, 1969.
60.L .M. Mack, A. Reisman and P.K. Bhattacharya,”Stress measurements of thermally grown thin oxides on (100) Si substrates”, J. Electrochem. Soc., 136, pp.3433-3437,1989.
61.W. Bruckner and H. Griessmann,”Apparatus for the laser-optical measurement of stress in thin films: results on CuNi”, Rev. Sci. Instrum.,69, pp.3662-3665,1998.
62.H. Sunami, Y. Itoh, and K. Sato,”Stress and thermal-expansion coefficient of chemical-vapor-deposited glass films”, J. Appl. Phys., 41, pp.5115-5117, 1970.
63.M. Shimbo and T. Matsuo, “ Thermal stress in CVD PSG and SiO2 films on silicon substrates”, J. Electrochem. Soc., 1, pp. 135-138, 1983.
64.C. Blaauw, ”Stress in chemical-vapor-deposited SiO2 and Plasma-SiNx films on GaAs and Si”, J. .App. Phys., 54, pp.5064-5068,1983.
65.J. T. Pan and I. Blech,”In situ stress measurement of refractory metal silicides during sintering”, J. Appl. Phys., 55, pp. 2874-2880, 1984.
66.D. S. Williams, “Elastic stiffness and thermal expansion coefficient of boron nitride films” , J. Appl. Phys., 57, pp.2340-2342, 1985.
67.M. Y. Han and J. H. Jou, “ Determination of the mechanical properties of r.f.-magnetron-sputtered zinc oxide thin films on substrates” ,Thin Solid Films, 260, pp. 58-64, 1995.
68.H. V. Tiwary and G. D. Sao, “ An electrical method for the measurement of thermal expansion of thin films”, J. Phys. E: Sci. Instrum., 14, pp. 1378-1380, 1981.
69.C. R. Snyder and F. I. Mopsik, “A precision capacitance cell for measurement of thion film out-of-plane expansion. I. Thermal expansion”, Rev. Sci. Instrum., 69, , pp. 3889-3895, 1998.
70.M. Ohring, The materials Science of Thin Films, Academic Press, Ch. 9,1992.
71.P. Hollman, M. Larsson, P.Hedenqvist, and S. Hogmark,” Tensile testing as a method for determining the Young’s modulus of thin hard coatings, “ Surface and Coatings Technology, 90, pp. 234-238, 1997.
72.A. Rouzaud, E. Barbier, J. Ernoult and E. Quesnel, “A method for elastic modulus measurements of magnetron sputtered thin films dedicated to mechanical applications”, Thin Solid Films, 270, pp. 270-274, 1995.
73.T. Shinoda, N. Soga, T. Hanada, and S. Tanabe, “Young’s modulus of RF-sputtered amorphous thin films in SiO2-Y2O3 system at high temperature”, Thin Solid Films, 293, pp. 144-148, 1997.
74.S. A. Jade and J. G. Smits, “Measurement of elastic properties of thin film ZnO by resonance method”, Proc. 1998 IEEE International Frequency Control Symposium, pp. 783-789, 1998.
75.P. Hariharan, B.F. Oreb, and T. Eiju, “Digital phase-shifting interferometry: a simple error-compensitng phase calculation algorithm”, Appl. Opt., 26, pp2504-2506, 1987.
76.C. K. Jim, “Polynomial fit of interferograms”, Appl. Opt., 21, pp. 4521-4525,1982.
77.C. K. Jim, “Polynomial fit of interferograms”, Ph. D. Dissertation, University of Arizona, Tucson,1982.
78.Zygo catalog, ZMI 2000 displacement measuring interferometer system ,1997.
79.徐德衍” 剪切干涉儀概論”, 科儀新知,第21卷,第二期, p.92, 1989.
80.K. Creath, Phase-measurement interferometry techniques, in Progress in Optics XXVI, edited by E. Wolf, Elsevier Science Publishers, 1988.
81.G. W. Johnson, D. C. Leiner, and D. T. Moore,” Phase-locked interferometry”, Proc. SPIE. Vol. 152, 1977.
82.G. W. Johnson, D. C. Leiner, and D. T. Moore,” Phase-locked interferometry”, Opt. Eng., 18, 46, 1979 .
83.R. Crane, “ Interference phase measurement”, Appl. Opt., 8, pp.538-542, 1969.
84.C. L. Kolipoulos, “Interferometric optical phase measurement”, Ph. D. Dissertation, University of Arizona, Tucson, 1981.
85.J. H. Bruning, D. R. Herriott, J. E. Callagher, D. P. Rosenfeld, A. O. White, and D. J. Brangaccio,” Digital Wavefront measuring interferometer for testing optical surfaces and lenses”,Appl. Opt., 13, pp.2693-2703, 1974.
86.P. Carre, “Installation et Utilisation du comparatear Photoelectricoue et Interferentiel du Bureau International des poids de. Mesures”, Metrologia, 2, 13-23, 1966.
87.N. Y. Cheng and J. C. Wyant, “Phase shifter calibration in phase-shifting interferometry”, Appl. Opt. 24, pp.3049-3052, 1985.
88.J. E. Greivenkamp and J. H. Bruning, “Phase shifting interferometry”, in Optical Shop Testing, ed. by D. Malacara,1992.
89.J. Schwider, R. Burow, K. E. Elssner, J. Grzanna, R. Spolaczyk, and K. Merkel, “Digital wave-front measuring interferometry: some systematic error sources”, Appl. Opt., 22, pp. 3421-3432,1983.
90.J. R. Taylor, “An Introduction to error analysis,” University Science Books, California, Ch. 3, 1982.
91.B. Edlen,” The refractive index of air”, Metrologia, 2, pp.71-80,1966.
92.K. N. Prettyjohns, “Charge-coupled device image acquisition for digital phase measurement interferometry,” Opt. Eng., 23, pp371-378, 1984.
93.J.R. Sites, P. Gilstrap and R.Rujkorakarn, “Ion beam sputter deposition of optical coatings, “Opt. Eng., 22, pp.447-449,1983.
94.J.R. McNeil, A.C. Barron, S.R. Wilson, and W.C Hermann “Ion-assisted deposition of optical thin films:low energy vs high energy bombardment, “Appl. Opt., 3, pp. 552-559,1984.
95.P. J. Martin ,H. A. Macleod, R. P. Netterfield, C. G. Pacey, and W. G. Sinty, “ Ion-beam-assisted deposition of thin films”, Appl. Opt, 22, pp. 178-184, 1983.
96.G. N. Strauss, N. Q. Danh, and H. K. Pulker, “ Mechanical stress in thin SiO2 and Ta2O5 films produced by reactive-low-voltage-ion-plating(RLVIP)”, J. Non-Crystalline Solids, 218, pp. 256-261, 1997.
97.J. Edlinger, J. Ramm, and H.K. Pulker,” Properties of ion-plated Nb2O5 films”, Thin Solid Films , 175, pp.207-212, 1989.
98.H.K. Pulker, “Characterization of optical thin films”, Appl. Opt., 18, pp.1969-1977, 1979.
99.H. Sunami, Y. Itoh, and K. Sato,”Stress and thermal-expansion coefficient of chemical-vapor-deposited glass films”, J. Appl. Phys., 41, pp.5115-5117, 1970.
100.E. A. Irene, “ Residual stress in silicon nitride films”, J. Electronic Materials, 5, pp.287-298, 1976.
101.H.A. Macleod, “Thin-Film Optical Filters”,2nd edition, Adam Hilger Ltd, Bristol, 1986.
102.P. J. Martin and R. P. Netterfield, Ion-Assisted Dielectric and Optical Coatings, in Handbook of Ion Beam Processing Technology, edited by J. J. Cuomo, S. M. Rossnagel and H. R. Kaufman, Noyes Publication: New Jersey, Ch. 19,1989.
103.K. Wasa and S. Hayakawa, Handbook of Sputter Depositin Technology-Principle, Technology and Appplications, Noyes Publication: New Jersey, Ch. 4,1992.
104.D. T. Wei, H. R. Kaufman and C. C. Lee, Ion Beam Sputtering, in Thin Films for Optical System, edited by F. R. Flory, Marcel Dekker: New York, Chap. 6,1995.
105.H.K.Pulker,Coatings on Glass, Elsevier Science B.V.,Fourth ed.,1996
106.李正中,薄膜光學與鍍膜技術,藝軒圖書出版社,pp.273-286,1999.
107.J. C. Manifacier, J. Gasiot and J. P. Fillard,”A simple method for the determination of the optical constants n, k and the thickness of a weekly absorbing thin film”, J. Physics E, 9 , PP. 1002-1004, 1976.
108.J. M. Bennett and L. Mattsson, Introduction to Surface Roughness and Scattering , Optical Society of America, Washington DC. 1989.
109.C. Ruppe and A. Duparre, “Roughness analysis of optical films and substrates by atomic force microscope” ,Thin Solid Films,288, pp.8-13,1996.
110.G. N. Strauss, W. Lechner, and H. K. Pulker, “ Gas pressures on the optical and mechanical properties of Ta2O5 films produced by reactive-low-voltage-ion-plating (RLVIP)” ,Thin Solid Films,351, pp. 53-56, 1999.
111.J. Edlinger, J. Ramm and H.K. Pulker, “Properties of ion-plated Nb2O5 films”,Thin Solid Films, 175, pp.207-212, 1989.
112.D. Konopka, D. E. Morton and F. T. Zimone,”Bipolar pulsed DC sputtering of optical films”, Proceedings of the 42th Annual SVC Technical Conference, pp. 217-222, 1999.
113.P. J. Martin, A. Bendavid, M. Swain, R. P. Netterfield, T. J. Kinder, W. G. Sainty, D. Drage and L. Wielunski “Properties of thin films of tantalum oxide deposited by ion-assisted deposition”, Thin Solid films, 239, pp181-185, 1994.
114.M. Cevro and G.Carter, “Ion-beam and dual-ion-beam sputter deposition of tantalum oxide films”, Opt. Eng.,34, , pp. 596-606, 1995.
115.K. Ishiyama and Y. Taga, “Ejection anagle dependence of electrical properties of ion beam sputtered tantalum oxide films”, Appl. Phys. Lett. 58, p577-579, 1991
116.H. Leplan and B. Geenen,” Residual Stresses in evaporated silicon dioxide thin films: Correlation with deposition parameters and aging behavior” J. Appl. Phys,78, pp962-968, 1995.
117.W. Fang, H. C. Tsai and C. Y. Lo, “Determining thermal expansion coefficients of thin films using micromachined cantilevers”, Sensors and Actuators,77,pp.21-27, 1999.
118.C.R. Ottermann and K. Bange ,”Correlation between the density of TiO2 films and their properties”,Thin Solid Films,286, pp.32-34, 1996.
119.M. A. Scobey and P. Stupik,”Improved temperature and humidity stability of ultra-narrow band filters”, 37th Annual Technical Conference Proceedings, Society of Vacuum Coaters, pp. 47-52,1994.
120.A.K. Chu, H.C. Lin and W.H. Cheng,”Temperature dependence of refractive index of Ta2O5 dielectric films’, J. Electro. Mater., 26, pp.889-892, 1997.
指導教授 李正中(Cheng-Chung Lee) 審核日期 2000-6-21
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