參考文獻 |
1. 陳俊宏, “泡生法生長氧化鋁單晶之數值模擬分析”, 國立中央大學機械工程研究所, 博士論文, 民國一O一年六月.
2. 吳東頤, “KY法生長大尺寸氧化鋁單晶之數值模擬分析”, 國立中央大學機械工程研究所, 碩士論文, 民國一O二年六月.
3. S. Toru, Z. Sakae, “Substrate-orientation dependence of GaN single-crystal films grown by metalorganic vapour phase epitaxy”, Journal of Applied Physics, Vol. 61, pp. 2533–2541 (1987).
4. D. C. Harris, F. Schmid, D. R. Black, E. Savrun, and H. E. Bates, “Factors that influence mechanical failure of sapphire at high temperature,” SPIE, Vol. 3060, pp. 226-235 (1997).
5. D. C. Harris, F. Schmid, J. J. Mecholsky, and Y. L. Tsai, “Mechanism of Mechanical Failure of Sapphire at High Temperature”, SPIE, Vol. 2286, pp. 16-25 (1994).
6. G. B. Stringfellow, “Organometallic Vapor Phase Epitaxy: Theory and Practice”, 1989.
7. M. L. Hitchamn, “Chemical Vapor Deposition: Principle and Application”, 1993.
8. Sugianto, R. A. Sani, P. Airfin, M. Budiman, and M. Barmawi, “Growth of GaN "lm on a-plane sapphire substrates by plasma-assisted MOCVD”, Journal of Crystal Growth, Vol. 221, pp. 311-315 (2000).
9. J. S. Son, K. H. Baik, Y. G. Seo, H. Song, J. H. Kim, S. M. Hwang, and T. G. Kim,” Optimal activation condition of nonpolar a-plane p-type GaN layers grown on r-plane sapphire substrates by MOCVD” , Journal of Crystal Growth, Vol. 326, pp. 98-102 (2011).
10. P. E. Tomaszewski, “Jan Czochralski - Father of the Czochralski method”, Journal of Crystal Growth, Vol. 236, pp. 1-4 (2006).
11. M. S. Akelrod, and F. J. Bruni, “Modern trends in crystal growth and new applications of sapphire”, Journal of Crystal Growth, ARTICLE IN PRESS (2012).
12. M. H. Tavakoli and H. Wilke, “Numerical study of induction heating and heat transfer in a real Czochralski system”, Journal of Crystal Growth, Vol. 275, pp. 85-89 (2005).
13. M. H. Tavakoli and H. Wilke, “Numerical investigation of heat transport and fluid flow during the seeding process of oxide Czochralski crystal growth Part 1: non-rotating seed”, Crystal Research and Technology, Vol. 42, No. 6, pp. 544-557 (2007).
14. M. H. Tavakoli and H. Wilke, “Numerical investigation of heat transport and fluid flow during the seeding process of oxide Czochralski crystal growth Part 2: rotating seed”, Crystal Research and Technology, Vol. 42, No. 7, pp. 688-698 (2007).
15. M. H. Tavakoli, “Numerical Study of Heat Transport and Fluid Flow of Melt and Gas during the Seeding Process of Sapphire Czochralski Crystal Growth”, Crystal Growth and Design, Vol. 7, No. 4, pp. 644-651 (2007).
16. M. H. Tavakoli, F. Samavat, and M. Babaiepour, “Influence of active afterheater on the induction heating process in oxide Czochralski systems”, Crystal Research and Technology, Vol. 43, No. 2, pp. 145-151 (2008).
17. M.H. Tavakoli, “Numerical study of heat transport and fluid flow during different stages of sapphire Czochralski crystal growth”, Journal of Crystal Growth, Vol. 310, pp. 3107-3112 (2008).
18. M. H. Tavakoli, E. Mohammadi-Manesh, and S. Omid, “Simulation of temperature and flow fields in an inductively heated melt growth system”, Crystal Research and Technology, Vol. 45, No. 11, pp. 1117-1122 (2010).
19. Jyh-Chen Chen, and Chung-Wei Lu, “Influence of the crucible geometry on the shape of the melt-crystal interface during growth of sapphire crystal using a heat exchanger method”, Journal of Crystal Growth, Vol. 266, pp. 239-245 (2004).
20. M. H. Tavakoli, H. Wilke and N.Crnogorac, “Influence of the crucible bottom shape on the heat transport and fluid flow during the seeding process of oxide Czochralski crystal growth”, Crystal Research and Technology, Vol. 42, No. 12, pp. 1252-1258 (2007).
21. M. H. Tavakoli, E.M.Manesh, A.Ojaghi, “Influence of crucible geometry and position on the induction heating process in crystal growth systems”, Journal of Crystal Growth, Vol. 311, pp. 4281-4288 (2009).
22. W. J. Lee, Y. C. Lee, H. H. Jo, Y. H. Park, “Effect of crucible geometry on melt convection and interface shape during Kyropoulos growth of sapphire single crystal”, Journal of Crystal Growth, Vol. 324, pp. 248-254 (2011).
23. C. Chen, H. J. Chen, W. B. Yan, C. H. Min, H. Q. Yu, Y. M. Wang, P. Cheng, and C. C. Liu, “Effect of crucible shape on heat transport and melt-crystal interface during the Kyropoulos sapphire crystal growth”, Journal of Crystal Growth, Vol. 388, pp. 29-34 (2014).
24. S. E. Demina, E. N. Bystrova, M. A. Lukanina, V. M. Mamedov, V. S. Yuferev, E. V. Eskov, M. V. Nikolenko, V. S. Postolov, and V. V. Kalaev, “Numerical analysis of sapphire crystal growth by the Kyropoulos technique”, Journal of Crystal Growth, Vol. 30, pp. 62-65 (2007).
25. S. E. Demina, E. N. Bystrova, V. S. Postolov, E. V. Eskov, M. V. Nikolenko, V. S. Yuferev, D. A. Marshanin , and V. V. Kalaev, “Use of numerical simulation for growing high-quality sapphire crystals by the Kyropoulos method”, Journal of Crystal Growth, Vol. 310, pp. 1443-1447 (2008).
26. C. W. Lu, and J. C. Chen, “Numerical simulation of thermal and mass transport during Czochralski crystal growth of sapphire”, Crystal Research and Technology, Vol. 45, pp.371 (2010).
27. C. W. Lu, J. C. Chen, C. H. Chen, C. H. Chen, W. C. Hsu, and C. H. Liu, “Effect of RF coil position on the transport process during the stages of sapphire Czochralski crystal growth”, Journal of Crystal Growth, Vol. 312, pp. 1074-1079 (2010).
28. S. E. Demina, and V. V. Kalaev, “3D unsteady computer modeling of industrial scale Ky and Cz sapphire crystal growth”, Journal of Crystal Growth, Vol. 320, pp. 23-27 (2011).
29. C. H. Chen, J. C. Chen, C. W. Lu, and C. M. Liu, “Effect of power arrangement on the crystal shape during the Kyropoulos sapphire crystal growth process”, Journal of Crystal Growth, Vol. 352, pp. 9-15 (2012).
30. H. Fang, J. Tian, Q. Zhang, Y. Pan, and S. Wang, “Study of melt convection and interface shape during sapphire crystal growth by Czochralski method”, International Journal of Heat and Mass Transfer, Vol. 55, pp. 8003-8009 (2012).
31. M. J. Hur, X. F. Han, D. S. Song, T. H. Kim, N. J. Lee, Y. J. Jeong, and K. W. Yi, “The influence of crucible and crystal rotation on the sapphire single crystal growth interface shape in a resistance heated Czochralski system”, Journal of Crystal Growth, ARTICLE IN PRESS (2013).
32. M. H. Tavakoli, T. A. Abasi, S. Omid, and E. B. Manesh, “The role of inner internal radiation on the melt growth of sapphire crystal”, Crystal Research and Technology, Vol. 48, No. 2, pp. 58-68 (2013).
33. O. M. Bunoiu, Th. Duffar, and I. Nicoara, “Gas bubbles in shaped sapphire”, Progress in Crystal Growth and Characterization of Materials, Vol. 56, pp. 123-145 (2010).
34. V. A. Borodin, T. A. Steriopolo, V. O. Tatarchenko, and T. N. Yalovets, “Control over gas bubble distribution in shaped sapphire crystals”, Crystal Research and Technology, Vol. 20, No. 3, pp. 301-306 (1985).
35. I. Nicoara, D. Nicoara, and V. Sofonea, “Void formation and distribution in shaped sapphire crystals”, Journal of Crystal Growth, Vol. 104, pp. 169-174 (1990).
36. O. M. Bunoiu, I. Nicoara, J. L. Santailler, F. Theodore, and T. Duffar, “On the void distribution and size on shaped sapphire crystals”, Crystal Research and Technology, Vol. 40, No. 9 pp. 852-859 (2005).
37. Irina. Nicoara, O. M. Bunoiu, and D. Vizman, “Voids engulfment in shaped sapphire crystals”, Journal of Crystal Growth, Vol. 287, pp. 291-295 (2006).
38. D. V. Kostomarov, Kh. S. Bagdasarov, S. A. Kobzareva, and E. V. Antonov, “Thermodynamic Analysis of the W–Al2O3 System near the Melting Temperature of Al2O3. I. Evolution of the System in the Pressure Range of 1 ×〖10〗^(–1)–1×〖10〗^(–4) bar”, ISSN 1063-7745, Crystallography Reports, 2010, Vol. 55, No. 2, pp. 318–323 (2010).
39. D. V. Kostomarov, Kh. S. Bagdasarov, S. A. Kobzareva, and E. V. Antonov, “Thermodynamic Analysis of the W–Al2O3 System near the Melting Temperature of Al2O3: II. Chemical Interactions at 1 ×〖10〗^(–5) bar”, ISSN 1063-7745, Crystallography Reports, 2010, Vol. 55, No. 3, pp. 513–517 (2010).
40. D. V. Kostomarov, Kh. S. Bagdasarov, and E. V. Antonov, “Oxidation of Tungsten in the W-Al2O3 System at Temperatures from 2350 to 2500 K and Pressures from 1 to 〖10〗^5 Pa”, ISSN 0020-1685, Inorganic Materials, 2011, Vol. 47, No. 2, pp. 152–155 (2011).
41. H. J. T. Ellingham, “Reducibility of oxides and sulphides in metallurgical processes”, Journal of the Society of Chemical Industry, pp. 125-133 (1944).
42. O. M. Bunoiu, F. Defoort, J. L. Santailler, T. Duffar, and I. Nicoara, “Thermodynamic analyses of gases formed during the EFG sapphire growth process”, Journal of Crystal Growth, Vol. 275, pp. 1707-1713 (2005).
43. W. Gui-gen, Z. Ming-fu, Z. Hong-bo, H. Xiao-dong, and Han. Jie-cai, “Study on inclusions in large sapphire optical crystal grown by SAPMAC Method”, Chinese Journal of Aeronautics, Vol. 19, pp. 31-35 (2006).
44. L. Zhang, H. Zuo, J. Zhou, J. Sun, D. Xing ,and J. Han, “Haze in sapphire crystals grown by SAPMAC method”, Crystal Research and Technology, Vol. 46, No. 7 pp. 669-675 (2011).
45. E. A. Ghezal, H. Li, A. Nehari, G. Alombert-Goget, A. Brenier, K. Lebbou, M. F. Joubert, and M. T. Soltani, “Effect of pulling rate on bubbles distribution in sapphire crystals grown by the micropulling down (μ-PD) technique”, Crystal Growth and Design, Vol. 12, pp. 4098-4103 (2012).
46. E. A. Ghezal, A. Nehari, K. Lebbou, and T. Duffar, “Observation of gas bubble incorporation during Micropulling-Down growth of sapphire”, Crystal Growth and Design, Vol. 12, pp. 5715-5719 (2012).
47. H. Li, E. A. Ghezal, A. Nehari, G. Alombert-Goget, A. Brenier, and K. Lebbou, “Bubbles defects distribution in sapphire bulk crystals grown by Czochralski technique”, Optical Materials, Vol. 35, pp. 1071-1076 (2013).
48. I. Nicoara, D. Vizman, and J. Friedrich, “On void engulfment in shaped sapphire crystals using 3D modelling”, Journal of Crystal Growth, Vol. 218, pp. 74-80 (2000).
49. O. Bunoiu, T. Duffar, F. Theodore, J. L.Santailler, and I. Nicoara, “Numerical simulation of the flow field and solute segregation in Edge-Defined Film-Fed Growth”, Crystal Research and Technology, Vol. 36, No. 7, pp. 707-717 (2001).
50. O. M. Bunoiu, J. L. Santailler, T. Duffar, and I. Nicoara, “Fluid flow and solute segregation in EFG crystal growth process”, Journal of Crystal Growth, Vol. 275, pp. 799-805 (2005).
51. H. Fang, L. Zheng, H. Zhang, Y. Hong, and Q. Deng, “Reducing melt inclusion by submerged heater or baffle for optical crystal growth”, Crystal Growth and Design, Vol. 8, No. 6, pp. 1840-1848 (2008).
52. H. Henry, and A. A. Stavros, “Mathematical modeling of solidification and melting: A review,” Modelling and Simulation in Materials Science and Engineering, Vol. 4, pp. 371-394 (1996).
53. M. N. Ozisik, Heat Conduction, 虹橋書店, Chap. 10 (1980).
54. Daniel Vizmen, Irina Nicoara, and Georg Miller, “Effect of temperature asymmetry and tilting in the vertical Bridgman growth of semi-transparent crystals”, Journal of Crystal Growth, Vol. 212, pp. 334-339 (2000).
55. Z. Liu and T. Carlberg, A model for dopant concentration in Czochralski silicon melts, Journal of the Electrochemical Society, Vol. 140, No. 7, July (1993).
56. K. Abe, T. Kondoh, and Y. Nagano, “A new turbulence model for predicting fluid flow and heat transfer in separating and reattaching flows—I. Flow field calculations”, International Journal of Heat and Mass Transfer, Vol. 37, pp. 139-151 (1994).
57. BUNG RYEOL SEO. B.E., M.E., “A NUMERICAL STUDY OF BUOYANT TURBULENT FLOWS USING LOW-REYNOLDS NUMBER k-ε MODEL”, (2001).
58. COMSOL 4.3 Multiphysics User’s Guide.
59. E. R. Dobrovinskaya, L. A. Lytvynov, and V. Pishchik, Sapphire-Material, Manufacturing, Applications.
60. 姚泰, 韓杰才, 左洪波, 孟松鶴, 張明福, 李常青, “藍寶石單晶的氣孔形成研究”, Journal of Inorganic Materials, Vol. 23, No. 3, pp. 439-442 (2008).
61. 張克從, 張東潓, 晶體生長科學與技術(第二版) 上冊, Chap.6, 科學出版社(1997).
62. 楊琳, 左然, “藍寶石晶體生長中氣泡及熱應力的數值模擬研究”, 江蘇大學碩士學位論文, 西元2012年5月.
63. J. A. Burton, R. C. Prim, and W. P. Slichter, “The distribution of solute in crystals grown from the melt. Part I. Theoretical”, Journal of Chemical Physics, Vol. 21, pp. 1987-1991 (1953).
64. D. T. J. Hurle, “Constitutional supercooling during crystal growth from stirred melt-I”, Solid-State Electronics, Vol. 3, pp. 37-44 (1961).
65. M. C. Flemings, Solidification Processing, McGraw-Hill book company, New York, pp. 60 (1974).
66. 劉哲銘, “氧化鋁單晶強化機制及其表面生長奈微米鎂鋁尖晶石之研究”, 國立中央大學機械工程研究所, 博士論文, pp. 55, 民國九十五年一月.
67. 陳建宏, “柴式法生長氧化鋁單晶過程最佳化熱流場之分析” , 國立中央大學機械工程研究所, 碩士論文, pp. 41, 民國九十七年六月.
68. R. Vichnevetsky, Computer methods for partial differential equations volume. Elliptic equations and the finite-element method (1981).
69. Huili Tang, Hongjun Li, and Jun Xu, Growth and Development of Sapphire Crystal for LED Applications, Chinese Academy of Sciences (2013). |