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姓名	簡中彥(Chung-yen Chien)  查詢紙本館藏	畢業系所	電機工程學系
論文名稱	掩埋於氮化矽中的鍺量子點及應用於可見光光偵測器最佳工程化研究 (Matrix Engineering of Ge Quantum-dot for Visible Photodetection Applications)
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摘要(中)	本篇論文系統性地探討了一個新穎的鍺量子點催化鄰近含矽層的氧化現象，以及其所產生的鍺量子點移動遷移行為。同時也研究了鍺量子點的內部結構、應力、光激發螢光譜線與光電特性。在此，我們提出一個矽溶入鍺量子點，再進一步擴散至量子點的尾端氧化的兩步驟機制來解釋所觀察到的鍺量子點在含矽層中移動的特殊現象。從氧化複晶矽鍺/氮化矽異質結構的實驗可知，鍺量子點的大小、形貌與空間分佈深深地受到氧化條件與鄰近區域是否有含矽層材料的存在影響。接著，透過溫度與光強度相依的光激發螢光譜線分析可知，熱應力與量子侷限效應的聯合用使鍺量子點具有準直接能隙的特性，並發出肉眼可見的螢光。 以鍺量子點為催化劑的兩階段分解與氧化含矽層的機制為基礎，我們發展了類似千層派堆疊氧化矽鍺的技術，並實作展示了一個簡單、可調控的方法來形成量子點大小均勻或漸變三維鍺量子點陣列。最後，我們也製作出了可調變偵測波長的鍺量子點金氧半光偵測器。此光偵測器的光暗電流比值與鍺量子點在閘介電層中的總體積和閘介電層的厚度息息相關。我們所製作出的鍺量子點金氧半光偵測器具有極低的暗電流(1.5×10-3 mA/cm2) 、優越的光暗電流比值(13500) 、高的光響應度(2.2 A/W) 和快的響應時間(5 ns) ，具有可直接與主流的矽基互補式金氧半電路的整合性。
摘要(英)	This thesis demonstrates a novel migration phenomenon of Ge quantum dot (QD), which catalytically enhances the local oxidation of underlying silicon-containing layers during the planar oxidation of poly-Si1-xGex/Si3N4 heterostructures over the Si substrate. The internal structure, crystal morphology, and chemical composition of Ge QDs formed in this manner are systematically investigated, and consequently a two-step mechanism has been proposed to explain the unique migration behavior of Ge QDs in Si-containing layers. First, the Ge QD enhances the decomposition of Si-containing layers to release Si interstitials. Subsequently, released Si interstitials diffuse through the Ge QD or its surface and eventually get oxidized beyond the Ge QD, leading to the movement of Ge QD. Accordingly, the size, morphology, and spatial distribution of the Ge QDs are significantly influenced by the oxidation conditions and the underlying silicon-containing layers. Temperature- and power-dependent photoluminescence (PL) analysis suggested that the PL emission on the visible wavelength of Ge QDs embedded in SiO2/Si3N4 matrices is a consequence of exciton recombination of Ge QDs thanks to combined effects of strain and quantum confinement. Based on this approach, this thesis further proposes a simple and controllable growth method for placing dense 3D Ge QD arrays in a uniform or a graded distribution by thermally oxidizing stacked poly-SiGe/Si3N4 in a layer-cake technique. Moreover, Ge-QD metal-oxide-semiconductor (MOS) photodetectors were fabricated and featured low dark current density (1.5×10-3 mA/cm2), superior photo-current-to-dark-current ratio (13 500), high photoresponsivity (2.2 A/W), and fast response time (5 ns), showing a great promise for direct integration with prevailing Si complementary metal-oxide-semiconductor (CMOS) electronic circuits. It is also worth to point out that the photo-current-to-dark-current ratio exhibits a strong dependence on the volume of Ge QD in the gate dielectrics and effective gate dielectric thickness.
關鍵字(中)	★ 鍺 ★ 量子點 ★ 光偵測器	關鍵字(英)	★ Germanium ★ Quantum dot ★ Photodiodes
論文目次	摘要 i Abstractii 致謝iv Table of Contentsv List of Figures viii List of Tables xii Chapter 1 Introduction 1 1-1 Introduction 1 1-2 Dissertation Organization 4 Chapter 2 Formation and Growth Mechanisms of Ge QD 6 2-1 Introduction 6 2-2 Review of Formation of Ge QDs from Other Studies 7 2-3 Review of Thermal Oxidation of Si1-xGex Alloy 8 2-4 Formation of Ge QDs Using Thermal Oxidation of Poly-SiGe on SiO2 or S3N4 11 2-4-1 Ge QDs Embedded in SiO2 14 2-4-2 Ge QDs Embedded in Si3N4 15 2-4-3 Chemical Composition of Ge QDs 16 2-4-4 Crystal structure of Ge QDs 18 2-4-5 Unique Migration Behavior of Ge QDs into Si Containing Layers 23 2-4-6 Internal Strain and phonon properties of Ge QDs 29 2-5 Summary 32 Chapter 3 Photoluminescence Properties of Ge QDs in Si3N4 34 3-1 Introduction 34 3-2 Review of PL Spectra of Ge QDs Embedded in SiO2 35 3-3 Power- and Temperature-dependent PL Spectra of Ge QDs 37 3-4 QD Size Dependence of PL Emission Peak Energy 41 3-5 Summary 45 Chapter 4 Multi-layered Ge QDs Array in Layer-cake Technique 46 4-1 Introduction 46 4-2 Formation of dense 3D Ge-QD Array 47 4-3 Effects of Ge Content, Surface roughness, and Buffer Nitride on Ge QD formation 48 4-4 Photoresponse of Ge-QD MOS Diodes 54 4-5 Summary 55 Chapter 5 Optimal Photoresponse of Single-layered Ge-QD MOS Diodes 57 5-1 Introduction 57 5-2 Optimal Photo Current to Dark Current Ratio and Response 58 5-3 Optoelectronic Characteristics of Ge-QDs MOS Diodes 61 5-4 Summary 68 Chapter 6 Conclusion and Future Work 71 6-1 Conclusion 71 6-2 Future Works 72 Reference 74 Publication list 83
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指導教授	李佩雯(Pei-wen Li)	審核日期	2014-11-25
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