參考文獻 |
[1] P.-W. Hooijmans, “RF front end application and technology Trends,” Design Automation Conf., pp. 73–78, June 2003.
[2] S.-T. Wu, “RF mixer design and characterization,” Master. Thesis, Elect. Eng., National Tsing Hua University, Taiwan, 2004.
[3] V. Liberali, and G. Trucco, “CMOS analog design for wireless communication,” in Proc. of Intl. Conf. on Microelectronics, 2004.
[4] C.-H. Lai, Y. Kambayashi, and M. Fujishima, “60-GHz CMOS down-conversion mixer with slow-wave matching transmission lines,” in Asia–Pacific Microw. Conf., Nov. 2006, pp. 195–198.
[5] F.-C. Chang, P.-C. Huang, S.-F. Chao, and H. Wang, “A low power folded mixer for UWB system applications in 0.18-μm CMOS technology,” IEEE Microw. Compon. Lett., vol. 17, no. 5, pp.367–369, May 2007.
[6] L. Liu and Z. Wang, “Analysis and design of a low-voltage RF CMOS mixer,” IEEE Trans. Circuits Syst. II, vol. 53, no. 3, pp. 212–216, Mar. 2006.
[7] I. Kallfass, H. Massler, A. Leuther, A. Tessmann, and M. Schlechtweg “A 210 GHz dual-gate FET mixer MMIC with >2 dB conversion gain high LO-to-RF isolation and low LO-drive requirements,” IEEE Microw. Compon. Lett., vol. 18, no. 8, pp. 557–559, Aug. 2008.
[8] J. Kim, M.-S. Jeon, D. Kim, J. Jeong, and Y. Kwon, “High-performance V-band cascode HEMT mixer and downconverter module,” IEEE Trans. Microw. Theory Techn., vol. 51, no. 3, pp. 805–810, Mar. 2003.
[9] K.-H. Liang, H.-Y. Chang, and Y.-J. Chan, “A 0.5–7.5 GHz ultra low-voltage low-power mixer using bulk-injection method by 0.18-μm CMOS technology,” IEEE Microw. Compon. Lett., vol. 17, no. 7, pp. 531–533, Jul. 2007.
[10] C.-H. Kuo, B.-H. Huang, C.-C. Kuo, K.-Y. Lin, and H. Wang, “A 10-35 GHz low power bulk-driven mixer using 0.13μm CMOS process,” IEEE Microw. Compon. Lett., Vol. 18, No. 7, pp. 455–457, Jun. 2008.
[11] C.-C. Huang, G.-C. Guu, C.-K. Chen, and C.-W. Huang, “A resistive double-balance mixer using bulk-driven method with low pumping power in 0.18 μm CMOS technology,” in Asia-Pacific Microw. Conf., Nov. 2013, pp. 5-8.
[12] C.-Y. Wang and J.-H. Tsai, “A 51 to 65 GHz low-power bulk-driven mixer using 0.13 um CMOS technology,” IEEE Microw. Compon. Lett., vol. 19, no.8, pp. 521–523, Aug. 2009.
[13] J.-H. Tsai, “Design of 40–108-GHz low-power and high-speed CMOS up-/down-conversion ring mixers for multistandard MMW radio applications,” IEEE Trans. Microw. Theory Techn., vol. 60, no. 3, pp. 670–678, Mar. 2012.
[14] W.-T. Li, H.-Y. Yang, Y.-C. Chiang, J.-H. Tsai, M.-H. Wu, and T.-W. Huang, “A 453 μW 53–70 GHz ultra low power double-balanced source-driven mixer using 90-nm CMOS technology,” IEEE Trans. Microw. Theory Techn., vol. 61, no. 5, pp. 1903–1912, May 2013.
[15] H.–K. Chiou, and H.-T Chou, “An ultra-low power V-Band source-driven down-conversion mixer with low-loss and broadband asymmetrical broadside-coupled balun in 90-nm CMOS technology,” IEEE Trans. Microw. Theory Techn., vol. 61, no. 7, pp.2620–2631, July. 2013.
[16] H.-Y. Yang, J.-H. Tsai, C.-H. Wang, C.-S Lin, W.-H. Lin, K.-Y. Lin, T.-W. Huang, and H. Wang, “Design and analysis of a 0.8-77.5-GHz ultra-broadband distributed drain mixer using 0.13-μm CMOS technology,” IEEE Trans. Microw. Theory Techn., vol. 57, no. 3, pp. 562–572, Mar. 2009.
[17] K.-L. Deng, and H. Wang, “A 3-33 GHz PHEMT MMIC distributed drain mixer,” in Proc. Radio Freq. Integr. Circuits Symp. Dig., May. 2002, pp. 151–154.
[18] F. Ellinger, L.-C. Rodoni, G. Sialm, C. Kromer, G.-V. Buren, M.-L. Schmatz, C. Menolfi, T. Toifl, T. Morf, M. Kossel, and H. Jackel, “30–40-GHz drain-pumped passive-mixer MMIC fabricated on VLSI SOI CMOS technology,” IEEE Trans. Microw. Theory Techn., vol. 52, no. 5, pp. 1382–1391, May. 2004.
[19] Y.-S. Lin, C.-L. Lu, Y.-H. Wang, “A 5 to 45 GHz distributed Mixer with cascode complementary switching pairs,” IEEE Microw. Compon. Lett., vol. 23, no. 9, pp. 495–497, Sep. 2013.
[20] H.-Y. Chang, S.-H. Weng, and C.-C. Chiong, “A 30-50 GHz wide modulation bandwidth bidirectional BPSK demodulator / modulator with low LO power,” IEEE Microw. Compon. Lett., vol. 19, no. 5, pp. 332–334, May. 2009.
[21] T.-Y. Yang, “Microwave / Millimeter-wave broadband and low-loss CMOS balun design and applications,” Ph.D. dissertation, Elect. Eng., National Central University, Taiwan, 2008.
[22] S. Hackl, J. Beck, M. Wurzer, and A.L. Scholta, “40 GHz monolithic integrated mixer in SiGe bipolar technology,” in IEEE MTT-S Int. Microw. Symp. Dig., vol. 2, pp. 1241–1244, May.2002.
[23] A. Khy and B. Huyart, “A 35–45 GHz low power direct-conversion Gilbert-cell mixer in 0.13μm GaAs PHEMT,” in Proc. 40th Eur. Solid-State Circuits Conf., Sep. 2010, pp.1058−1061.
[24] J.-H. Tsai, and C.-C. Wang “A 25-55 GHz CMOS sub-harmonic direct-conversion mixer for BPSK demodulator,” in Asia-Pacific Microw. Conf., Dec. 2008, pp. 1−4.
[25] C.-S. Lin, H.-Y. Chang, P.-S. Wu, K.-Y. Lin, and H. Wang, “A 35-50 GHz IQ-demodulator in 0.13-μm CMOS technology,” in IEEE MTT-S Int. Microw. Symp. Dig., Jun. 2007, pp. 1397–1400.
[26] J.-H. Tsai, “Design of 1.2-V broadband high data-rate MMW CMOS I/Q modulator and demodulator using modified Gilbert-cell mixer,” IEEE Trans. Microw. Theory Techn., vol. 59, no. 5, pp. 1350–1360, May. 2011.
[27] J.-H. Tsai, P.-S. Wu, C.-S. Lin, T.-W. Huang, J.-G.-J. Chern, W.-C. Huang, and H. Wang, “A 25–75 GHz broadband Gilbert-cell mixer using 90-nm CMOS technology,” IEEE Microw. Compon Lett., vol. 17, no. 4, pp. 247–249, Apr. 2007.
[28] F. Zhang, E. Skafidas, and W. Shieh, “A 60-GHz double-balanced Gilbert cell down-conversion mixer on 130-nm CMOS,” in IEEE Radio Freq. Integr. Circuits Symp. Dig., Jun. 2007, pp. 141–144.
[29] J.-H. Tsai, H.-Y. Yang, T.-W. Huang, and H. Wang, “A 30-100 GHz wideband sub-harmonic active mixer in 90 nm CMOS technology,” IEEE Microw. Wireless Compon. Lett., vol. 18, no. 8, pp. 554–556, Aug. 2008.
[30] C.-S. Lin, P.-S. Wu, H.-Y. Chang, and H. Wang, “A 9–50-GHz Gilbert-cell down-conversion mixer in 0.13-µm CMOS Technology,” IEEE Microw. Compon. Lett., vol. 16, no. 5, pp.293-295 May. 2006.
[31] M. Kraemer, M. Ercoli, D. Dragomirescu, and R. Plana, “A wideband single-balanced down-mixer for the 60 GHz band in 65 nm CMOS,” in Asia-Pacific Microw. Conf., Aug. 2012. pp. 1849–1852.
[32] D.-H. Kim and J.-S. Rieh, “A single-balanced 60-GHz down-conversion mixer in 0.13-μm CMOS technology for WPAN applications,” in 34th International Conference Infrared, Millimeter, and Terahertz Waves. Sept. 2009, pp. 1–2.
[33] Y.-A. Lai, C.-N. Chen, S.-H. Hung, and Y.-H. Wang, “Compact double-balanced star mixers with novel dual 180° hybrids,” In 11th International Conference Solid-State and Integr. Circuits Tech., (ICSICT) Nov. 2012, pp. 1–4.
[34] J.-L. Bohorquez, A.-P. Chandrakasan, and J.-L. Dawson, “A 350 µW CMOS MSK transmitter and 400 µW OOK super-regenerative receiver for medical implant communications,” IEEE J. Solid-State Circuits, vol. 44, no. 6, pp. 1248–1259, Apr. 2009.
[35] A.-C. Heiberg, T.-W. Brown, T.-S. Fiez, and K. Mayaram, “A 250 mV, 352 µW GPS receiver RF front-end in 130 nm CMOS,” IEEE J. Solid-State Circuits, vol. 46, no. 4, pp. 938–949, Apr. 2011.
[36] B. R. Jackson, and C. E. Saavedra, “A dual-band self-oscillating mixer for C-band and X-band applications,” IEEE Trans. Microw. Theory Techn., vol. 58, no. 2, pp. 318–323, Feb. 2010.
[37] M. J. Roberts, S. Iezekiel, and C. M. Snowden, “A W-band self-oscillating subharmonic MMIC mixer,” IEEE Trans. Microw. Theory Techn., vol. 46, no. 12, pp. 2104–2108, Dec. 1998.
[38] C.-H. Wu, and N.-Y. Wu, “Design of low power up-conversion self-oscillating mixer,” in Proc. China-Japan Joint Microw. Conference, (CJMW) pp. 1–4, Apr. 2011.
[39] J. Ghahramani, M. Rahnama, S. Rezakhani, M. Soleimani Farrokh, and A.-M. Kordalivand, “Design and simulation of 5 GHz up-conversion self-oscillating mixer,” IEEE System Engineering and Technology, Jun. 2011, pp. 96–99.
[40] C.-H. Wu, and G.-X. Jian, “Design of up conversion mixer with enhanced transconductance stage and low power consumption oscillator,” in Proc. International Conf. on Signals and Electronic Systems, pp. 229–232, Sep. 2010.
[41] K. W. Kobayashi, A. K. Oki, D. K. Umemoto, T. R. Block, and D. C. Streit, “A novel self-oscillating HEMT–HBT cascode VCO-mixer using an active tunable inductor,” IEEE J. Solid-State Circuits, vol. 33, no. 6, pp. 1231–1240, Jun. 1998.
[42] J.-Y. Kim; W.-Y. Choi, “30 GHz CMOS self-oscillating mixer for self-heterodyne receiver application,” IEEE Microw. Compon. Lett., vol. 20, no. 6, pp. 334–336, June. 2010.
[43] F. Starzer, P.-H. Forstner, L. Maurer, and A. Stelzer, “A 21-GHz self-oscillating down-converter mixer,” 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF systems (SiRF), Jan. 2012, pp. 93–96.
[44] T.-P. Wang, C.-C. Chang, R.-C. Liu, M.-D. Tsai, K.-J. Sun, Y.-T. Chang, L.-H. Lu, and H. Wang, “A low-power oscillator mixer in 0.18-um CMOS technology,” IEEE Trans. Microw. Theory Techn., vol. 54, no. 1, pp. 88–95, Jan. 2006.
[45] Stanley S. K. Ho, and Carlos E. Saavedra, “A CMOS broadband low-noise mixer with noise cancellation,” IEEE Trans. Microw. Theory Techn., vol. 58, no. 5, pp. 1126–1132, May. 2010.
[46] Ahmed Amer, Emad Hegazi, and Hani F. Ragaie, “A 90-nm wideband merged CMOS LNA and mixer exploiting noise cancellation,” IEEE J. Solid-State Circuits, vol. 42, no. 2, pp. 323–328, Feb. 2007.
[47] A. Liscidini, A. Mazzanti, R. Tonietto, L. Vandi, P. Andreani, and R. Castello, “Single-stage low-power quadrature RF receiver front-end: The LMV cell,” IEEE J. Solid-State Circuits, vol. 41, pp. 2832–2841, Dec. 2006.
[48] M. Camponeschi, A. Bevilacqua, and P. Andreani, “Analysis and design of a low-power single-stage CMOS wireless receiver,” Norchip, 2009.
[49] B. Razavi, RF Microelectronics, 2nd ed. Upper Saddle River, NJ: Prentice Hall, 2011.
[50] K.L. Fong, and R. Meyer, “Monolithic RF Active Mixer Design,” IEEE Trans. on Circuits and Systems-Ⅱ:Analog and Digital Signal Processing, vol.46, pp. 231–239, Mar. 1999.
[51] WIN Semiconductors, “0.25 μm InGaAs pHEMT enhancement / depletion-mode device (E/D-mode) device model handbook,” ver.1.0.4, May. 2014.
[52] On San A. Tang and Colin S. Aitchison, “A very wide-band microwave MESFET mixer using the distributed mixing principle,” IEEE Trans. Microw. Theory Techn., vol. 33, no. 12, pp. 1470–1478, Dec. 1985.
[53] S.-H. Chen, Y.-C. Liu, S.-H. Weng, H.-Y. Chang, K. Chen, and S.-H. Wu, “A monolithic DC-31 GHz distributed amplifier using cascode HBT-NMOS gain cell in 0.18 μm SiGe technology,” in Asia-Pacific Microw. Conf., Dec. 2012, pp. 211–213.
[54] F. Eshghabadi, M. Dousti, F. Temcamani, B. Delacressoniere, and J.-L. Gautier, “A 2.4-GHz front-end system design for WLAN applications using 0.35μm SiGe BiCMOS technology,” in Proc. IEEE 3rd Int. Conf. ICTTA, Damascus, Syria, Apr. 2008, pp. 1–5.
[55] S.-H. Weng, H.-Y. Chang, C.-C. Chiong, and Y.-C. Wang, “Gain-bandwidth analysis of broadband Darlington amplifiers in HBT-HEMT process,” IEEE Trans. Microw. Theory Techn., vol. 60, no. 11, pp. 3458–3473, Nov. 2012.
[56] K.-C. Lin, H.-K. Chiou, K.-H. Chien, T.-Y. Yang, P.-C. Wu, C.-L. Ko, and Y.-Z. Juang, “A 4.2-mW 6-dB gain 5–65-GHz gate-pumped down-conversion mixer using Darlington cell for 60-GHz CMOS receiver,” IEEE Trans. Microw. Theory Techn., vol. 61, no. 4, pp. 1516–1522, Apr. 2013.
[57] W.-C. Wang, “Design of microwave / millimeter-wave broadband mixers and low noise amplifiers,” Master. Thesis, Elect. Eng., National Central University, Taiwan, 2014.
[58] H.-C. Chiu, “Active wideband down-converter for microwave and millimeter-wave applications,” Master. Thesis, Elect. Eng., National Central University, Taiwan, 2011.
[59] S.-B. Cohn, “A class of broadband three-port TEM-mode hybrid,” IEEE Trans. Microw. Theory Techn., vol. 19, Issue 2, pp. 110–116, Feb. 1968.
[60] “Sonnet® User’s Guide,” 13th ed. Sonnet Softw. Inc., North Syracuse, NY, 2009.
[61] A. Suárez, and R. Queré, Stability Analysis of Nonlinear Microwave Circuits, Boston, MA: Artech House, 2003, Chapter 2.
[62] G. Gonzalez, Microwave Transistor Amplifiers: Analysis and Design, Englewood Cliffs, N.J.: Prentice-Hall, 1984, Chapter 5.
[63] L. Samoska, K.-Y. Lin, H. Wang; Y.-H. Chung, M. Aust, S. Weinreb, and D. Dawson, “On the stability of millimeter-wave power amplifiers,” in IEEE MTT-S Int. Microw. Symp. Dig., Jun. 2002, pp. 429–432.
[64] Stephen A. Mass, Nonlinear Microwave and RF Circuits second edition, Artech House, 2003.
[65] T. Koivisto and E. Tiiliharju, “A self-oscillating LNA-mixer,” Norchip, 2010.
[66] WIN Semiconductors, “0.5-μm InGaAs pHEMT enhancement / depletion-model device (E/D-mode) device model handbook,” ver.1.3.3, Sep, 2010.
[67] A. Hajimiri and T. H. Lee, “A general theory of phase noise in electrical oscillators,” IEEE J. Solid-State Circuits, vol. 33, no. 2, pp. 179–194, Feb. 1998.
[68] J. Lin, K.-Y. Chen, D.-A. Humphrey, R.-A. Hamm, R.-J. Malik, A. Tate, R.-F. Kopf, and R.-W. Ryan, “Ka-band monolithic InGaAs/InP HBT VCO’s in CPW structure,” IEEE Microw. Guided Wave Lett., vol. 5, no. 11, pp. 379–381, Nov. 1995.
[69] B. Razavi, “A study of injection locking and pulling in oscillators,” IEEE J. Solid-State Circuits, vol. 39, pp. 1415–1424, Sep. 2004.
[70] X. Zhang, X. Zhou, and A.-S. Daryoush, “A theoretical and experimental study of the noise behavior of subharmonically injection locked local oscillators,” IEEE Trans. Microw. Theory Techn., vol. 40, no. 5, pp. 895–902, May. 1992.
|