在SOI基板上以快速熱熔法製造高品質鍺及近紅外線光偵測元件之研製

以作者查詢圖書館館藏

、以作者查詢臺灣博碩士

、以作者查詢全國書目

、勘誤回報

、線上人數：33

、訪客IP：3.131.13.37

姓名

王上明(Shang-ming Wang) 查詢紙本館藏

畢業系所

電機工程學系

論文名稱

在SOI基板上以快速熱熔法製造高品質鍺及近紅外線光偵測元件之研製
(High-Quality Ge on SOI for Near Infrared Photodetector by Rapid-Melting-Growth Technique)

相關論文

★ 以熱熔異質磊晶成長法製造之鍺光偵測器	★ 鉭錳合金及銅鍺化合物應用於積體電路後段製程中銅導線之研究
★ 快速熱熔磊晶成長法製造側向PIN(Ge-Ge-Si)光偵測器	★ 二維薄膜及三維塊材Seebeck係數量測
★ 塊材、薄膜與奈米線之熱導係數量測方法探討	★ 以快速熱熔異質磊晶成長法製作鍺矽累增型光偵測器
★ 以快速熱熔融磊晶成長法製作鍺錫合金PIN型光偵測器	★ 利用火花電漿燒結法製備以矽為基底之奈米材料於熱電特性上之應用研究
★ P型金屬氧化物薄膜的製備應用於軟性電子	★ 金屬氧化物製備應用於軟性電子元件
★ 超導材料釔鋇銅氧化物熱電特性量測分析	★ 鎂矽錫合金熱電特性研究及應用
★ 矽基熱電模組開發及特性研究	★ P型金屬氧化物與硫化物之研究
★ 物聯網之熱感測器應用	★ P型金屬氧化物與硫化物合金薄膜之研究

檔案

[Endnote RIS 格式]

[Bibtex 格式]

[相關文章]

[文章引用]

[完整記錄]

[館藏目錄]

至系統瀏覽論文 ( 永不開放)

摘要(中)

隨著高速通訊快速的發展，光傳輸是許多團隊研究的重點，本論文所呈獻之成果為高品質鍺製作成的光偵測器和特性量測，及其在光通訊上的應用潛力。我們利用SOI wafer蝕刻出許多矽長條型結構後，由國家奈米元件中心(NDL)進行離子佈值分別以BF2、As摻雜成為P型以及N型相間的陣列，在P型和N型矽上方鍍上一層鍺膜，再將試片在爐管中進行超過鍺熔點溫度的快速熱退火後，利用拉曼光譜儀以及穿透式電子顯微鏡等分析鍺膜，發現鍺的品質提升。藉由鍺材料在可見光及近紅外光波長下具有較矽為佳的光吸收特性，並搭配P型和N型矽形成P-I-N結構的光偵測器，將可得到和現今矽製程相容的光電元件，並具有良好的光電轉換效率與光響應。

摘要(英)

With the rapid development of high-speed communication, light transmission has been the mainstream in academic researches due to its better light absorption characteristics at near-infrared wavelength and potential applications in optical communications. This thesis presents the high-quality germanium on SOI for photodetectors as well as its characteristics and measurement. The Ge was made by rapid-melting-growth technique and investigated by Raman spectroscopy and standard electron microscopy analysis. The high-quality Ge was integrated with P-type and N-type silicon pillars for the PIN photodetector. This work demonstrated that high-quality Ge can be obtained by COMS-compatible process with good photoelectric conversion efficiency and photoresponsity.

關鍵字(中)

★ 矽鍺
★ 快速熱熔法
★ 近紅外光

關鍵字(英)

論文目次

摘要…………………………………………………………………………………………………I
Abstrate……………………………………………………………………………………II
致謝………………………………………………………………………………………………III
目錄………………………………………………………………………………………………IV
圖表目錄………………………………………………………………………………………V
第一章研究動機………………………………………………………………1
1-1 簡介………………………………………………………………………………1
1-2 鍺/矽異質結構簡介………………………………………………1
1-3 鍺光偵測器研究動機………………………………………………3
第二章鍺光偵測器製作現況與實驗動機…………………7
2-1 前言……………………………………………………………………………7
2-2 光二極體及PIN光偵測器種類和操作原理…7
2-2-1 P-I-N光偵測器操作原理……………………8
2-3 光偵測器之光響應度與截止波長……………………8
2-3-1 光的種類..………………………………………………8
2-3-2 光響應度 (Photoresponsivity)……………………9
2-3-3 截止波長 (Cut-off Wavelength)…………………9
2-4 製作出良好的單晶鍺材料………………………………………………9
第三章 P-I-N光偵測器設計與關鍵製程……………11
3-1 前言……………………………………………………………………11
3-2 鍺光偵測設計構想…………………………………………11
3-3 光偵測器的關鍵製程……………………………………11
3-3-1 關鍵製程-形成良好的單晶鍺材料………12
3-4 單晶鍺光偵測器製作完整流程…………………………………………12
第四章 P-I-N光偵測量測分析與探討………………………22
4-1 前言…………………………………………………………………………………………22
4-2 鍺膜在高溫退火後的拉曼光譜量測分析……………………22
4-3 HRTEM鍺膜退火後影像分析……………………………………………23
4-4 光偵測器光電特性量測分析……………………………………………24
4-4-1 光偵測之波長相依特性…………………………………………24
4-4-2 光偵測之功率相依特性…………………………………………26
第五章結論與未來展望…………………………………………………………33

參考文獻……………………………………………………………………………34

參考文獻

[1] R. Chau et al., “Silicon nano-transistors for logic applications,” Physica E:Low-dimensional Systems and Nanostructures, vol. 19, p. 1, 2003.
[2] Y. Cui et al., “High performance silicon nanowire field effect transistors,” Nano Lett., vol. 3, p. 149, 2003.
[3] N. Singh et al., “High-performance fully depleted silicon nanowire (diameter ≦ 5 nm) gate-all-around CMOS devices,” IEEE Electron Device Lett., vol. 27,p. 383, 2006.
[4] S. E. Thompson et al., “A 90-nm logic technology featuring strained-silicon,”IEEE Trans. Electron Devices, vol. 51, p. 1790, 2004.
[5] F. K. LeGoues et al., “Anomalous strain relaxation in SiGe thin films and superlattices,”Physical Review Letters, vol. 66, p. 2903, 1991.
[6] Roosevelt people, “Physics and application of GexSi1-x/Si strained-layer heterostructures,” IEEE Journal of Quantum Electronics, vol. 22 (9), p. 1696,1986.
[7] J. Michel, J. Liu and L. C. Kimerling,“High-performance Ge-on-Si photodetectors.”Nature Photonics, 4, p527, 2010.
[8] J. Liu et al., “Ge-on-Si optoelectronics, ”Thin Solid Films,520,3354,(2012).
[9] S. B. Samavedam and E. A. Fitzgerald, “Novel dislocation structure and surface morphology effects in relaxed Gee/Si-Ge(graded)/Si structure,” Journal of Appl.
Phys. Lett., vol. 81, p. 3108, 1997.
[10] J. L. Liu, et al., “High-quality Ge films on Si substrates using Sb surfactant-mediated graded SiGe buffers,” Appl. Phys. Lett., 79, 3431, 2001.
[11] H. C. Luan et al., “High-quality Ge epilayers on Si with low threading –dislocation densities,” Appl. Phys. Lett., vol. 75, p. 2909, 1999.
[12] Q. Li et al., “Selective growth of Ge on Si(100) through vias of SiO2 nanotemplateusing solid source molecular beam epitaxy,” Appl. Phys. Lett.,vol.
83, p. 5032, 2003.
[13] W. C. Dash et al., “Intrinsic optical absorption in single-crystal germanium and silicon at77℃ and 300 ℃,” Physical Review, vol. 99, p. 1151, 1955.
[14] S. Luryi et al., “New infrared detector on a silicon chip,” IEEE Transactions on Electron Devices, vol. 31 (9), p. 1135, 1984.
[15] B. D. Soole and H. Schumacher, “InGaAs metal-semiconductor-metal photodetectors for long wavelength optical communication,” IEEE Journal of
Quantum Electronics, vol. 27 (3),p. 737, 1991.
[16] 郭銘浩，““量身訂作”鍺量子點以應用於近紅外光偵測元件之研製”，碩士論文，國立中央大學，民國102年。
[17] E. Monroy, E. Muñoz, F. J. Sánchez, F. Calle, E. Calleja, Beaumout,P. Gibart, J.A. Muñoz, and F. Cussó,“High-performance GaN p–njunction photodetectors
for solar ultraviolet applications,＂ Semicond. Sci.Technol., vol. 13,pp.1042-1046, June 1998.
[18] R.P.Riesz, “High Speed Semiconductor Photodiode”,Phys.Rev.116,84 (1995).
[19] Z. C. Huang, J. C. Chen, and D. Wickenden, “Characterization of GaN using
thermally stimulated current and photocurrent spectroscopies and its application to UV detectors,＂ J. Cryst. Growth, vol. 170, pp. 362-362, Jan. 1997.
[20] Yaocheng Liu, Micheal D. Deal, and James D. Plummer, “High-quality single-crystal Ge on insulator by liquid-phase epitaxy on Si substrates,”APPLIED PHYSICS LETTERS,vol. 84,(2004)
[21] Placzek G.: ”Rayleigh Streeung und Raman Effekt”, In: Hdb. der Radiologie, Vol.VI., 2, 1934, p. 209.
[22] A. Singha, P. Dhar, and Anushree Roy, Am. J. Phys. 73(3), 224(2005).
[23]吳梓豪，“生成鍺奈米量子點與鍺奈米殼於絕緣層基板上之應用研究”，碩士論文，國立中央大學，民國102年。
[24]Cho, A. Y.; Arthur, J. R.; Jr. Molecular beam epitaxy. Prog. Solid State Chem.1975, 10: 157–192.
[25]D.Ahn et al., “High performance, waveguide integrated Ge Photodetectors,”Optic Express,15,3961,(2007).
[26] J. Liu et al., “Ge-on-Si optoelectronics,” Thin Solid Films, 520, 3354–3360,2012.

指導教授

辛正倫(Cheng-lun Hsin)

審核日期

2015-1-20

推文