| 姓名 |
佘貴慧(Guei-Huei She)
查詢紙本館藏 |
畢業系所 |
光電科學與工程學系 |
| 論文名稱 |
矽基光偵測器研製與整合於光學波導系統
(Investigation of Silicon-Based Photodetector and Integration to Optical Waveguide System)
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| 相關論文 | |
| 檔案 |
 [Endnote RIS 格式]
[Bibtex 格式]
 [相關文章]  [文章引用]  [完整記錄]  [館藏目錄]  至系統瀏覽論文 ( 永不開放)
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| 摘要(中) |
本論文提出三種不同結構的850nm光源之矽基光檢測器(Si-based Photodetector)，不但有低溫(室溫)製程與製作簡易之優點，更可藉由調變薄膜厚度提升光偵測器之效能，並成功將所研究之光檢測器整合於矽基光學波導平台系統，未來對於微機電系統整合具有極大的潛力。微機電系統(MEMS)為現在產業趨勢，目前系統中之主動元件常見材料為三五族化合物、鍺(Ge)等，但其有高成本與整合困難等缺點，因此研發矽基光偵測元件製作成本較低、製程技術也非常成熟，而且容易達到積體化及微小化。
本研究以金屬-半導體-金屬(Metal-Semiconductor-Metal, MSM)結構矽基光偵測器為主軸。光偵測器元件退火方式進行優化，但我們利用直流式真空濺鍍系統(DC sputter system )於室溫環境下成長透明導電膜氧化銦錫(In2O3:Sn ,ITO)，並製作成元件。此材料兼具抗反射和有效收集載子等特性，搭配最佳抗反射層厚度得到0.63 A/W的光響應。為了提高訊雜比、降低暗電流且不影響光響應的情況下，針對MSM結構進行優化，方法為於氧化銦錫和矽基板間插入一層5nm的二氧化矽形成金屬-絕緣體-半導體(Metal-Insulator-Semiconductor, MIS)結構，插入絕緣層可使蕭基特能障由0.53 eV (SiO2=0nm)提升至0.64eV (SiO2=5nm)，使暗電流降低兩個數量級，光暗電流訊雜比由13.7提升至309，光響應為0.51 A/W。而本實驗為了配合矽基光學波導平台內的高分子聚合物，使用120 oC、2分鐘退火參數優化MIS光偵測器，使暗電流密度由1.89×〖10〗^(-3) A/cm2至4.04×〖10〗^(-5) A/cm2，光電流部分由1.42×〖10〗^(-3) A提升至1.84×〖10〗^(-3) A。整合於矽基光學波導系統選擇傳統PN結溝光偵測器，其二極體接面使用技術純熟、傳統的離子佈植形成二極體接面搭配退火活化並蓋上一層抗反射二氧化矽層使光響應提升1.5倍，達0.32 A/W。
完整比較三種不同結構光偵測器元件，選擇技術成熟PN光偵測器並成功其整合於矽基光學波導平台，並比較元件和整合於系統端之光偵測器特性表現。元件利用退火900 oC、1分鐘修補晶格缺陷搭配抗反射層可使光響應達0.32 A/W，暗電流為2.74×〖10〗^(-7)A，而系統端光響應可達0.28 A/W，暗電流6.49×〖10〗^(-6) A。
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| 摘要(英) |
In this research, we propose the three different structures of Si-based photodetector for the light source of 850 nm. We modulated thickness of film to improve efficiency of the photodetector at low temperature with brief fabrication steps and successfully integrated it to the Si-based optical waveguide bench. There is great potentiality to apply this technique to the MEMS system in the future. Nowadays, MEMS is getting popular in the industry but Ⅲ-Ⅴcompound is high cost and difficult to fabricate to the active components which are used in MEMS system. Therefore, the Si-based photodetector is a good choice to promote the development of MEMS system because of low cost, mature fabrication technology, convenient to reduce scale and integration.
In this investigation, we focused on the structure of Metal-Semiconductor-Metal Si-based Photodetector. Annealing which can improve film quality or good ohmic contact is the common way to optimize the components but we used DC sputter system to sputter athe layer of transparent conducting oxide, In2O3: Sn (ITO) which provides good anti-reflection and efficient electrons or holes collection. The layer is used to fabricate photodetector components and the best responsivity is 0.79 A/W with anti-reflection layer for 850nm. In order to improve MSM structure by inducing the Iphoto/ Idark ratio、decreasing dark current without impacting on responsivity, we inserted the layer about 3.5nm SiO2 between ITO and N-type Silicon to form Metal-Insulator-Semiconductor structure. Because of the insulator, the Schottky barrier height was induced from 0.53eV (SiO2=0nm) to 0.64eV (SiO2=3.5nm) and the dark current was reduced by two orders of magnitude and the Iphoto/ Idark ratio was enhanced from 13.7 to 309, the responsivity of MIS photodetector was 0.51 A/W. Then, we optimized MIS photodetector at 120 oC process for 2 minutes. The result was that the dark current density was reduced from 1.89×〖10〗^(-3) A/cm2 to 4.04×〖10〗^(-5) A/cm2 and the photo current was increasing from 1.42×〖10〗^(-3) A to 1.84×〖10〗^(-3) A. In addition to MSM and MIS structures, we choosed PN photodetector that formed diode junction by traditional ion implantation as a reference. The responsivity of PN photodetector was 1.5 times larger than the one without anti-reflection layer. The responsivity of PN photodetector with anti-reflection was 0.32 A/W.
We have compared three different structure of photodetectors; in addition it was successful to integrate the PN photodetector to the Si-based optical waveguide bench. Then, the PN photodetector component was compared with it that integrating in system. The responsivity of PN photodetector component was 0.33 A/W and the dark current was 2.74×〖10〗^(-7)A. Otherwise, the responsivity of photodetector in system was 0.28 A/W and the dark current was 6.49×〖10〗^(-6) A.
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| 關鍵字(中) |
★ 矽基光偵測器
★ 金屬-半導體-金屬
★ 金屬-絕緣層-半導體 |
關鍵字(英) |
★ Si-based photodetector
★ MSM
★ MIS |
| 論文目次 |
摘要I
AbstractII
致謝III
目錄i
圖目錄iv
表目錄v
第一章 緒論1
1-1前言1
1-2研究動機3
1-3研究目的與本文架構4
第二章 基本原理及文獻回顧 5
2-1光偵測器工作原理5
2-2 P-N結構及其製程方法7
2-2-1 PN結構7
2-2-2 PN製程方法9
2-3 MSM (Metal-Semiconductor- Metal)結構及文獻回顧10
2-3-1 MSM結構10
2-3-2 金屬-半導體-金屬結構光偵測器文獻回顧12
2-4 金屬-絕緣體-半導體結構及文獻回顧15
2-4-1 金屬-絕緣體-半導體結構15
2-4-2 金屬-絕緣體-半導體結構光偵測器文獻回顧 17
第三章 實驗步驟、設備及分析儀器20
3-1實驗步驟20
3-1-1二極體接面製備20
3-1-2 PN、MSM、MIS結構偵測器製備流程21
3-2製程設備介紹24
3-2-1直流離子濺鍍機(DC-Sputtering)24
3-2-2反應式偶合電漿化學氣相沉積系統(BMR CVD)24
3-2-3快速退火爐(Arts-RTA)25
3-2-4電子槍蒸鍍系統(E-Gun)25
3-2-5反應離子蝕刻機(Reactive-ion-etching)25
3-2-6光罩對準曝光機(Q-Aligner)25
3-3分析儀器27
3-3-1橢圓偏振儀(Spectroscopy Ellipsometer, SE)27
3-3-2 霍爾測量系統(Hall effect sensor)28
3-3-3原子力顯微鏡(Atomic Force Microscopy, AFM)28
3-3-4 穿透式電子顯微鏡(Transmission Electron Microscopy, TEM)28
3-3-5 光電子能譜儀(x-ray photoelectron spectroscopy ,XPS)29
3-3-6 紫外光-可見光-紅外光譜儀(UV-VIS-NIR Spectrum)29
3-3-7 電源供應器(型號:Keithley2400)30
第四章 光電元件製備之結果討論31
4-1 PN結構31
4-1-1 PN結構-薄膜31
4-1-2 PN結構-光偵測器元件34
4-2 MSM (Metal-Semiconductor- Metal)結構39
4-2-1 MSM結構-薄膜39
4-2-2 MSM結構-光偵測器元件44
4-3 MIS (Metal-Insulator-Semiconductor)結構47
4-3-1 MIS結構-薄膜47
4-3-2 MIS結構-元件49
4-4 矽基光測器結構比較分析53
4-4-1 PN與MSM結構比較53
4-4-2 熱退火對暗電流影響57
4-5整合於矽基光學波導系統58
4-5-1矽基光學感測平台系統架構58
4-5-2 矽基光學波導系統整合流程59
4-5-3 PN光偵測器整合至矽基光學波導系統成果探討61
第五章 結論與未來展望62
5-1 結論62
5-2 未來展望63
參考文獻65
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| 參考文獻 |
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| 指導教授 |
張正陽(Jenq-Yang Chang)
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審核日期 |
2015-7-22 |
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