參考文獻 |
[1] J.-H. Lee, G.A. Galli, J.C. Grossman, "Nanoporous Si as an Efficient Thermoelectric Material", Nano Letters, 8 , 3750-3754, (2008).
[2] L. Hu, G. Chen, "Analysis of Optical Absorption in Silicon Nanowire Arrays for Photovoltaic Applications", Nano Letters, 7, 3249-3252, (2007).
[3] 李婉琪,"整合銀染技術與矽奈米線太陽能電池陣列之生醫感測平台研究",奈米科技研究所,交通大學,1-68,(2013).
[4] 歐祖銘,C.-W. Hong,T.-M. Ou,"固態物理與電聲子動態研究磁化矽奈米線熱電晶片".
[5] F.J. Li, S. Zhang, J.W. Lee, "Rethinking of the silicon nanowire growth mechanism during thermal evaporation of Si-containing powders", Thin Solid Films, 558, 75-85, (2014).
[6] N. Wang, Y.Cai, R.Q. Zhang, "Growth of nanowires", Materials Science and Engineering: R: Reports, 60 , 1-51, (2008).
[7] N. Fukata, T. Oshima, T. Tsurui, S. Ito, K. Murakami, "Synthesis of silicon nanowires using laser ablation method and their manipulation by electron beam", Science and Technology of Advanced Materials, 6 , 628, (2005).
[8] N.M. Hwang, W.S. Cheong, D.Y. Yoon, D.-Y. Kim, "Growth of silicon nanowires by chemical vapor deposition: approach by charged cluster model", Journal of Crystal Growth, 218 , 33-39, (2000).
[9] A.I. Hochbaum, R. Fan, R. He, P. Yang, "Controlled Growth of Si Nanowire Arrays for Device Integration", Nano Letters, 5 , 457-460, (2005).
[10] J.R. Arthur, "Molecular beam epitaxy", Surface Science, 500 , 189-217, (2002).
[11] P. Werner, N.D. Zakharov, G. Gerth, L. Schubert, U. Gösele, "On the formation of Si nanowires by molecular beam epitaxy", International Journal of Materials Research, 97 , 1008-1015, (2006).
[12] T. Hanrath, B.A. Korgel, "Supercritical fluid–liquid–solid (SFLS) synthesis of Si and Ge nanowires seeded by colloidal metal nanocrystals", Advanced Materials, 15 , 437-440, (2003).
[13] T. Hanrath, B.A. Korgel, "Nucleation and growth of germanium nanowires seeded by organic monolayer-coated gold nanocrystals", Journal of the American Chemical Society, 124 , 1424-1429, (2002).
[14] R.S. Wagner, W.C. Ellis, "Vapor‐liquid‐solid mechanism of single crystal growth", Applied Physics Letters, 4 , 89-90, (1964).
[15] H.-K. Park, B. Yang, S.-W. Kim, G.-H. Kim, D.-H. Youn, S.-H. Kim, S.-L. Maeng, "Formation of silicon oxide nanowires directly from Au/Si and Pd–Au/Si substrates", Physica E: Low-dimensional Systems and Nanostructures, 37 , 158-162, (2007).
[16] Y. Wu, P. Yang, "Direct Observation of Vapor−Liquid−Solid Nanowire Growth", Journal of the American Chemical Society, 12, 3165-3166, (2001).
[17] V. Schmidt, J.V. Wittemann, S. Senz, U. Gösele, "Silicon Nanowires: A Review on Aspects of their Growth and their Electrical Properties", Advanced Materials, 21 , 2681-2702, (2009).
[18] J.I. Abdul Rashid, J. Abdullah, N.A. Yusof, R. Hajian, "The Development of Silicon Nanowire as Sensing Material and Its Applications", Journal of Nanomaterials, 2013, 16, (2013).
[19] K.W. Kolasinski, "Catalytic growth of nanowires: Vapor–liquid–solid, vapor–solid–solid, solution–liquid–solid and solid–liquid–solid growth", Current Opinion in Solid State and Materials Science, 10, 182-191, (2006).
[20] C.Y. Wen, M.C. Reuter, J. Tersoff, E.A. Stach, F.M. Ross, "Structure, Growth Kinetics, and Ledge Flow during Vapor−Solid−Solid Growth of Copper-Catalyzed Silicon Nanowires", Nano Letters, 10 , 514-519, (2010).
[21] S. Noor Mohammad, "For nanowire growth, vapor-solid-solid (vapor-solid) mechanism is actually vapor-quasisolid-solid (vapor-quasiliquid-solid) mechanism", The Journal of Chemical Physics, 131, 224702, (2009).
[22] J.L. Lensch-Falk, E.R. Hemesath, D.E. Perea, L.J. Lauhon, "Alternative catalysts for VSS growth of silicon and germanium nanowires", Journal of Materials Chemistry, 19, 849-857, (2009).
[23] H.F. Yan, Y.J. Xing, Q.L. Hang, D.P. Yu, Y.P. Wang, J. Xu, Z.H. Xi, S.Q. Feng, "Growth of amorphous silicon nanowires via a solid–liquid–solid mechanism", Chemical Physics Letters, 323, 224-228, (2000).
[24] R.Q. Zhang, Y. Lifshitz, S.T. Lee, "Oxide-Assisted Growth of Semiconducting Nanowires", Advanced Materials, 15 ,635-640, (2003).
[25] H. Han, Z. Huang, W. Lee, "Metal-assisted chemical etching of silicon and nanotechnology applications", Nano Today, 9, 271-304, (2014).
[26] K.Q. Peng, Y.J. Yan, S.P. Gao, J. Zhu, "Synthesis of Large-Area Silicon Nanowire Arrays via Self-Assembling Nanoelectrochemistry", Advanced Materials, 14, 1164-1167, (2002).
[27] A. Nassiopoulou, V. Gianneta, C. Katsogridakis, "Si nanowires by a single-step metal-assisted chemical etching process on lithographically defined areas: formation kinetics", Nanoscale Research Letters,.6, 1-8, (2011).
[28] F. Bai, M. Li, R. Huang, D. Song, B. Jiang, Y. Li, "Template-free fabrication of silicon micropillar/nanowire composite structure by one-step etching", Nanoscale Research Letters, 7, 1-5, (2012).
[29] W.-K. To, C.-H. Tsang, H.-H. Li, Z. Huang, "Fabrication of n-Type Mesoporous Silicon Nanowires by One-Step Etching", Nano Letters, 11, 5252-5258, (2011).
[30] L.A. Osminkina, K.A. Gonchar, V.S. Marshov, K.V. Bunkov, D.V. Petrov, L.A. Golovan, F. Talkenberg, V.A. Sivakov, V.Y. Timoshenko, "Optical properties of silicon nanowire arrays formed by metal-assisted chemical etching: evidences for light localization effect", Nanoscale research letters, 7, 1-6, (2012).
[31] R. Ouertani, A. Hamdi, C. Amri, M. Khalifa, H. Ezzaouia, "Formation of silicon nanowire packed films from metallurgical-grade silicon powder using a two-step metal-assisted chemical etching method", Nanoscale research letters, 9, 1-10, (2014).
[32] S. Li, W. Ma, Y. Zhou, X. Chen, Y. Xiao, M. Ma, F. Wei, X. Yang, "Fabrication of p-type porous silicon nanowire with oxidized silicon substrate through one-step MACE", Journal of Solid State Chemistry, 213, 242-249, (2014).
[33] S. Li, W. Ma, Y. Zhou, X. Chen, Y. Xiao, M. Ma, W. Zhu, F. Wei, "Fabrication of porous silicon nanowires by MACE method in HF/H2O2/AgNO3 system at room temperature", Nanoscale research letters, 9 , 1-8, (2014).
[34] Y. Qu, L. Liao, Y. Li, H. Zhang, Y. Huang, X. Duan, "Electrically conductive and optically active porous silicon nanowires", Nano letters, 9 , 4539-4543, (2009).
[35] M.-L. Zhang, K.-Q. Peng, X. Fan, J.-S. Jie, R.-Q. Zhang, S.-T. Lee, N.-B. Wong, "Preparation of large-area uniform silicon nanowires arrays through metal-assisted chemical etching", The Journal of Physical Chemistry C, 112 , 4444-4450, (2008).
[36] X. Zhong, Y. Qu, Y.-C. Lin, L. Liao, X. Duan, "Unveiling the formation pathway of single crystalline porous silicon nanowires", ACS applied materials & interfaces, 3 , 261-270, (2011).
[37] Y. Qi, Z. Wang, M. Zhang, F. Yang, X. Wang, "A processing window for fabricating heavily doped silicon nanowires by metal-assisted chemical etching", The Journal of Physical Chemistry C, 117 , 25090-25096, (2013).
[38] D.M. Rowe, "CRC handbook of thermoelectrics", CRC press, (1995).
[39] L. Weber, E. Gmelin, "Transport properties of silicon", Applied Physics A, 53 , 136-140, (1991).
[40] A.I. Hochbaum, R. Chen, R.D. Delgado, W. Liang, E.C. Garnett, M. Najarian, A. Majumdar, P. Yang, "Enhanced thermoelectric performance of rough silicon nanowires", Nature, 451 , 163-167, (2008).
[41] A.I. Boukai, Y. Bunimovich, J. Tahir-Kheli, J.-K. Yu, W.A. Goddard Iii, J.R. Heath, "Silicon nanowires as efficient thermoelectric materials", Nature, 451, 168-171, (2008).
[42] E. Nasser, "Fundamentals of gaseous ionization and plasma electronics", Wiley-Interscience, (1971).
[43] P.K. Chu, J.Y. Chen, L.P. Wang, N. Huang, "Plasma-surface modification of biomaterials", Materials Science and Engineering: R: Reports, 36, 143-206, (2002).
[44] S. Tachi, K. Tsujimoto, S. Okudaira, "Low‐temperature reactive ion etching and microwave plasma etching of silicon", Applied physics letters, 52, 616-618, (1988).
[45] K.-S. Chen, A. Ayón, X. Zhang, S.M. Spearing, "Effect of process parameters on the surface morphology and mechanical performance of silicon structures after deep reactive ion etching (DRIE)", Microelectromechanical Systems, Journal of, 11, 264-275, (2002).
[46] K. Suzuki, A. Sawabe, H. Yasuda, T. Inuzuka, "Growth of diamond thin films by dc plasma chemical vapor deposition", Applied physics letters, 50, 728-729, (1987).
[47] Y. Osada, "Plasma polymerization processes", Elsevier Science Ltd, (1992).
[48] N. Inagaki, "Plasma surface modification and plasma polymerization", CRC Press, (1996).
[49] D.J. Economou, "Pulsed plasma etching for semiconductor manufacturing", Journal of Physics D: Applied Physics, 47, 303001, (2014).
[50] C.-Y. Tsai, S.-Y. Yu, C.-L. Hsin, C.-W. Huang, C.-W. Wang, W.-W. Wu, "Growth and properties of single-crystalline Ge nanowires and germanide/Ge nano-heterostructures", CrystEngComm, 14, 53-58, (2012).
[51] M.C. Wingert, Z.C. Chen, E. Dechaumphai, J. Moon, J.-H. Kim, J. Xiang, R. Chen, "Thermal conductivity of Ge and Ge–Si core–shell nanowires in the phonon confinement regime", Nano letters, 11 , 5507-5513, (2011).
[52] M. Ghossoub, K. Valavala, M. Seong, B. Azeredo, K. Hsu, J. Sadhu, P. Singh, S. Sinha, "Spectral phonon scattering from sub-10 nm surface roughness wavelengths in metal-assisted chemically etched Si nanowires", Nano letters, Vol.13, 1564-1571, (2013).
[53] M. Brodsky, M. Cardona, J. Cuomo, "Infrared and Raman spectra of the silicon-hydrogen bonds in amorphous silicon prepared by glow discharge and sputtering", Physical Review B, 16, 3556, (1977).
[54] Z. Iqbal, S. Veprek, "Raman scattering from hydrogenated microcrystalline and amorphous silicon", Journal of Physics C: Solid State Physics, 15, 377, (1982).
[55] G. Kumar, G. Prasad, R. Pohl, "Experimental determinations of the Lorenz number", Journal of materials science, 28, 4261-4272, (1993).
[56] M. Holland, "Analysis of lattice thermal conductivity", Physical Review, 132, 2461, (1963).
[57] Y. Ju, K. Goodson, "Phonon scattering in silicon films with thickness of order 100 nm", Applied Physics Letters, 74, 3005-3007, (1999).
[58] D.K. Brice, K.B. Winterbon, "Ion implantation range and energy deposition distributions: Low incident ion energies", Plenum Press, (1975).
[59] S.K. Bux, R.G. Blair, P.K. Gogna, H. Lee, G. Chen, M.S. Dresselhaus, R.B. Kaner, J.P. Fleurial, "Nanostructured bulk silicon as an effective thermoelectric material", Advanced Functional Materials, 19, 2445-2452, (2009).
[60] A.I. Hochbaum, D. Gargas, Y.J. Hwang, P. Yang, "Single crystalline mesoporous silicon nanowires", Nano letters, 9 , 3550-3554, (2009).
[61] J.S. Meena, M.-C. Chu, Y.-C. Chang, H.-C. You, R. Singh, P.-T. Liu, H.-P.D. Shieh, F.-C. Chang, F.-H. Ko, "Effect of oxygen plasma on the surface states of ZnO films used to produce thin-film transistors on soft plastic sheets", Journal of Materials Chemistry C, 1, 6613-6622, (2013).
[62] J. Koo, S. Kim, "Charge transport modulation of silicon nanowire by O2 plasma", Solid State Sciences, 11, 1870-1874, (2009).
[63] R. Jaeger, L. Egerton, "Hot Pressing of Potassium‐Sodium Niobates", Journal of the American Ceramic Society, 45, 209-213, (1962).
[64] M. Tokita, Mechanism of spark plasma sintering, Proceeding of NEDO International Symposium on Functionally Graded Materials, Japan, 22,(1999)
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