金屬有機化學氣相沉積反應腔體承載盤熱流場之數值分析與實作驗證

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何國鴻(Kuo-hung Ho) 查詢紙本館藏

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能源工程研究所

論文名稱

金屬有機化學氣相沉積反應腔體承載盤熱流場之數值分析與實作驗證
(Numerical analsis and experimental verification for thermal fluid field of susceptor in MOCVD reactor)

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摘要(中)

MOCVD為製造發光二極體(LED)中ㄧ個極為重要的製程，因其製程為高溫環境，因此在承載盤溫度場以及腔體流場分佈上有別於一般情況，而在磊晶的過程中，對於承載盤表面之溫度均勻性要求也極高，而熱場與流場所產生的效應是息息相關的，因其對於薄膜沉積均勻性與成長速率、晶格品質和材料使用率有極大的影響，故反應腔體內部的熱流場分析是必要的，因其可以決定一個LED元件的優劣，所以熱場分析在承載盤、磊晶區域、加熱器及反應腔體是非常重要的，並進一步對腔體流場相關參數像是質量流率和轉速分析其造成的影響，最後耦合熱場及流場在腔體內的分佈情形，探討承載盤表面溫度場之均勻性。
由於原本的石墨承載盤有使用週期過短的缺點，而使用碳化矽鍍膜之石墨承載盤，不僅能提高使用壽命，也有可能因此而改善承載盤整體的熱傳導率。基於上述原因，此異質材料之承載盤的熱場分析也是必要的。
最後將以上結果應用到自行建置之高溫驗證平台進行實作驗證，並搭配模擬結果相互比對，建立模擬與實作間高準確性的能力。

摘要(英)

MOCVD is the main process for LED. Because of its high temperature environment, the temperature distribution on the surface of susceptor and the flow field of chamber are different with commercial case. The temperature distribution on the surface of susceptor requires high uniformity under Epitaxy process. And the effect of thermal and flow field generated is closely related due to it influences extremely the uniformity of the deposited process, growth rate of film, the lattice quality and the material utilization. Therefore, the analysis of thermal flow field inside the chamber is necessary. Because it can make a decision on the pros and cons of a LED device, and the analyses of the thermal field on the susceptor, the area of epitaxy, heater and the chamber of reactor are very important. In addition, we analyzes the effect of the various flow parameters such as mass flow rate and rotation rate in the chamber. Finally, we couple the distribution of thermal and flow field in the chamber to investigate the uniformity of temperature distribution on the surface of susceptor.
Because the graphite susceptor has a disadvantage such as short lifetime. However, with using silicon carbide coating, it not only rises the lifetime but also improves the total thermal conductivity. As the results of these reasons, the analysis of thermal flow field on the heterogeneoussilicon carbide coated surface is necessary.
Consequently, we built a high temperature verification chamber and use this chamber to verify the result of simulation on their high accuracy.

關鍵字(中)

★ 熱流場分析
★ 承載盤表面溫度場之均勻性
★ 碳化矽鍍膜

關鍵字(英)

論文目次

摘要 I
Abstract II
致謝 III
目錄 IV
圖目錄 VI
表目錄 X
第一章緒論 1
1-1前言 1
1-2 研究動機與背景 3
1-3 參考文獻 6
1-4 研究內容 11
第二章MOCVD磊晶系統 13
2-1 加熱系統 14
2-2 氣體傳輸系統 19
2-3 反應腔體 23
2-4 溫度量測 27
2-5 尾氣處理系統 31
第三章相關理論 32
3-1 薄膜沉積理論 32
3-2 傳導熱傳遞[40] 35
3-3 對流熱傳遞[40] 41
3-4 輻射熱傳遞[40] 44
第四章結果與討論 47
4-1 研究架構 47
4-1-1研究流程 47
4-1-2 模擬邊界條件及統御方程式設定 50
4-1-3 溫度擷取方式及分析方法 50
4-1-4 實驗內容 52
4-2原始承載盤 54
4-3 加入SiC coating比較 58
4-4承載盤底部加厚比較 62
4-5縮小承載盤整體半徑比較 73
4-6 腔體加入氣流場比較 78
4-7 最佳化結果實作比對 85
第五章結論與未來展望 89
參考文獻 90

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指導教授

利定東

審核日期

2015-7-30

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