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姓名	陳裕斌(Yu-bin Chen)  查詢紙本館藏	畢業系所	電機工程學系
論文名稱	電壓相依穿隧率對於單電子電晶體之電荷傳輸的影響 (Bias-dependent tunneling rate effects on the charge transport of single electron transistors)
相關論文	★ 矽鍺/矽異質接面動態臨界電壓電晶體及矽鍺源/汲極結構之研製 ★ 量子點的電子能階 ★ 應用於數位電視頻帶之平衡不平衡轉換器設計 ★ 單電子電晶體之元件特性模擬 ★ 半導體量子點之穿隧電流 ★ 有機非揮發性記憶體之量測與分析 ★ 鍺奈米線與矽奈米線電晶體之研製 ★ 選擇性氧化複晶矽鍺奈米結構形成鍺量子點及在單電子電晶體之應用 ★ 以微控制器為基礎的智慧型跑步機系統研製 ★ 單電子電晶體耦合量子點的負微分電導效應 ★ 單電子電晶體的熱電效應 ★ 多量子點系統之熱電效應 ★ 多量子點系統之熱整流效應 ★ 單電子電晶體在有限溫度下的模擬 ★ 分子電晶體之穿隧電流與熱電效應 ★ 串接耦合量子點之熱電特性
檔案	[Endnote RIS 格式]    [Bibtex 格式]    [相關文章]   [文章引用]   [完整記錄]   [館藏目錄]   [檢視]  [下載] 本電子論文使用權限為同意立即開放。 已達開放權限電子全文僅授權使用者為學術研究之目的，進行個人非營利性質之檢索、閱讀、列印。 請遵守中華民國著作權法之相關規定，切勿任意重製、散佈、改作、轉貼、播送，以免觸法。
摘要(中)	室溫下操作的單電子電晶體，其量測電位及閘極電壓都非常大。因此穿隧率極易受應用電位及閘極電壓影響。本論文利用WKB近似來計算電壓相依的穿隧率。量子點到左、右電極的穿隧率是應用電位及閘極電壓的指數函數. 不僅如此,量子點能階、穿隧能障厚度及穿隧能障高度對於左、右穿隧率也有重要的影響。我們也發現量子點之電子佔據率深受電位相依的穿隧率影響, 穿隧電流出現類階梯的行為, 及庫倫震盪電流曲線則呈現出震盪波峰高度隨閘極電壓壓上升而升高的情況。模擬結果和實驗量測結果相當吻合.
摘要(英)	The large applied bias and gate voltage of single electron transistors operated at room temperatures lead to the charge transport far away from equilibrium , therefore the tunneling rates of electrons are significantly influenced by the applied bias and gate voltage. Using WKB approximation, we calculate the bias and gate voltage-dependent electron tunneling rates. The left and right tunneling rates of a single quantum dot (QD) are the exponential function of the applied bias and gate voltage. In addition, these tunneling rates also depend on the barrier height, barrier width and QD energy levels. We find that tunneling currents show the quasi- staircase behavior and Coulomb oscillatory current with respect to gate voltage increases with increasing gate voltage. These features get very good agreement with experimental measurements.
關鍵字(中)	★ 單電子電晶體 ★ 電壓相依穿隧率	關鍵字(英)	★ Single electron transistor ★ bias-dependent tunneling rate
論文目次	摘要............................................................................................................................... I Abstract ......................................................................................................................... II 致謝.............................................................................................................................. III 目錄.............................................................................................................................. IV 圖目錄.......................................................................................................................... VI 第一章 導論.................................................................................................................. 1 1-1 單電子電晶體元件史 ..................................................................................... 1 1-2 研究動機 ......................................................................................................... 2 第二章 單電子電晶體之電流-電壓特性曲線 ............................................................ 7 2-1 電流-電壓特性曲線 ........................................................................................ 7 2-2 模型建立 ......................................................................................................... 9 2-3 不考慮電壓相依的穿隧率 ........................................................................... 12 第三章 電壓相依之穿隧率........................................................................................ 14 3-1 電壓相依之穿隧率公式推導 ....................................................................... 14 3-2 對稱的位障寬度對穿隧率的效應 ............................................................... 17 3-2-1 穿隧率和閘極電壓的關係 ........................................................................ 17 3-2-2 穿隧率和應用電位的關係 ........................................................................ 18 3-3 非對稱位障寬度對穿隧率的效應 ............................................................... 19 3-3-1 穿隧率和閘極電壓的關係 ........................................................................ 19 3-3-2 穿隧率和應用電位的關係 ........................................................................ 20 3-4 穿隧位能障高度對於穿隧率的效應 ........................................................... 21 3-4-1 穿隧率和閘極電壓的關係 ........................................................................ 21 3-4-2 穿隧率和應用電位的關係 ........................................................................ 22 第四章 電壓相依的穿隧率對穿隧電流的影響........................................................ 24 4-1 對稱位障寬度 ............................................................................................... 24 4-1-1 穿隧電流和閘極電壓的關係 .................................................................... 24 V 4-1-2 穿隧電流和應用電位的關係 .................................................................... 26 4-2 非對稱位障寬度 ........................................................................................... 28 4-3 穿隧位能障高度 ........................................................................................... 29 第五章 結論................................................................................................................ 31 參考文獻...................................................................................................................... 32
參考文獻	[1] K. K. Likharev, “Correlated discrete transfer of single electrons in ultrasmall tunnel junctions,” IBM Journal of Research and Development, 32, 144, (1988). [2] T. A. Fulton and G.J. Dolan, “Observation of single-electron charging effects in small tunnel junctions,” Physical Review Letters, 59, 109, (1987). [3] Susan J. Angus, Andrew J. Ferguson, Andrew S. Dzurak and Robert G. Clark, “Gate-defined quantum dots in intrinsic silicon,” Nano Letters, 7, 2051, (2007). [4] W. H. Lim, F. A. Zwanenburg, H. Huebl, M. Mottonen, K. W. Chan, A. Morello, A. S. Dzurak”Observation of the single-electron regime in a highly tunable silicon quantum dot” Appl. Phys. Lett. 95, 242102 (2009) [5] Shin, S. J.; Jung, C. S.; Park, B. J.; Yoon, T. K.; Lee, J. J.; Kim, S. J.; Choi, J. B.; Takahashi, Y.; Hasko, D. G.” Si-based ultrasmall multiswitching single-electron transistor operating at room-temperature” Applied Physics Letters, 97(10): 103101(2010) [6] Sejoon Lee, Youngmin Lee, Emil B. Song, and Toshiro Hiramoto”Observation of Single Electron Transport via Multiple Quantum States of a Silicon Quantum Dot at Room Temperature” Nano Lett. 2014, 14, 71−77 [7] V.N. Ermakov,” Resonant electron tunneling through double-degenerate local state with account of strong electron{phonon interaction” Physica E 8 (2000) 99-105 [8] David M.T. Kuo and Y.C.Chang , ”Tunneling current spectroscopy of a nanostructure junction involving multiple energy levels”, Phys. Rev. Lett. 99,086803(2007)
指導教授	郭明庭(Ming-ting Kuo)	審核日期	2015-7-14
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