參考文獻 |
參 考 文 獻
【1】 J. Bardeen, et al., “The Transistor, A Semi-Conductor Triode”, American Physical Society Sites, Phys. Rev. 74, pp. 230-231, 1948.
【2】 Jack St. Clair Kilby, “Turning Potential into Realities: The Invention of the Integrated Circuit (Nobel Lecture)”, WILEY-VCH-Verlag GmbH, Vol. 2, Issue: 8-9, pp. 482–489, 2001
【3】 P. K. Bondyopadhyay, “Moore′s law governs the silicon revolution”, IEEE, Vol. 86, Issue: 1, pp. 78-81, 1998.
【4】 莊達人,VLSI 製造技術,五版,高立圖書有限公司,臺北縣,民國九十一年。
【5】 G. K. Celler and S. Cristoloveanu, “Frontiers of Silicon-on-Insulator”, Journal of Applied Physics, Vol. 93, Issue 9, pp. 4955-4978, May 2003.
【6】 J. B. Kuo and K.-W. Su, “CMOS VLSI Engineering: Silicon-on-Insulator (SOI)”, Kluwer Academic Publishers, Boston, 1998.
【7】 J.-P. Colinge, “Silicon-on-Insulator Technology: Materials to VLSI, 3rd Edition”, Springer Science+Business Media, Inc., New York, 2004.
【8】 M. Bruel, “Silicon on insulator material technology”. Electronics Letters, Vol. 31, Issue 14, pp. 1201-1202, 1995.
【9】 Q.-Y. Tong and U. Gösele, “Semiconductor Wafer Bonding: Science and Technology”, John Wiley&Sons, Inc., New York, 1999.
【10】 J. B. Lasky et al., “Silicon-on-Insulator (SOI) by Bonding and Etch-Back”, Electron Devices Meeting, 1985 International, Vol. 31, pp. 684-687, 1985.
【11】 T.-H. Lee, “Semiconductor thin film transfer by wafer bonding and advanced ion implantation layer splitting technologies”, Duke University, Ph.D. Dissertation, 1998.
【12】 L. R. Fisher and J. N. Israelachvili, “Direct measurement of effect of meniscus forces on adhesion: A study of the applicability of macroscopic thermodynamics to microscopic liquid interface”, Colloids and surface, Vol. 3, pp. 303-319, 1981.
【13】 R. Legtenberg, et al., “Stiction of surface micromachined structures after rinsing and drying: model and investigation of adhesion mechanisms”, Sensors and Actuators, Vol. 43, pp. 230-238, 1994.
【14】 Q.-Y. Tong and U. Gösele, “A model of low-temperature wafer bonding and its applications”, Journal of the Electrochemical Society, Vol. 143, pp. 1773-1779, 1996.
【15】 Q.-Y. Tong, et al., “Low Vacuum Bonding”, Electrochemical and Solid-State Letters, Vol. 1, pp. 52-53, 1998.
【16】 T. Suni, et al., “Effects of Plasma Activation on Hydrophilic Bonding of Si and SiO2”, Journal of the Electrochemical Society, Vol. 149, pp. G348-G351, 2002.
【17】 G. Whittaker, “Microwave Heating Mechanisms”, http://homepoages.ed.ac. uk/ah05/chla.html, 1994.
【18】 David E. Clark and Willard H. Sutton, “Microwave Processing of Materials”, Annu. Rev. Mater. Sci., Vol. 26, pp. 299-331, 1996.
【19】 A. C. Metaxas, “Microwave heating”, IEE Power Engineering Journal 5, 1991.
【20】 D. Micael et al., “Application of Microwave Dielectric Heating Effects to Synthetic Problems in Chemistry”, Chem. Soc. Rev., 20, pp. 1-47, 1991.
【21】 曾信富,「微波加熱處理與材料特性分析」,國立清華大學,碩士論文,民國九十五年。
【22】 高健玲,「微波加熱與微波萃取教學與實驗教材之設計」,國立高雄師範大學,碩士論文,民國九十一年。
【23】 A. De, et al., Ceram. Eng. Sci. Proc., 11(9-10), pp. 1743-53, 1990.
【24】 Morteza Oghbeei* and Omid Mirzaee, “Microwave versus conventional sintering: A review of fundamentals, advantages and applications”, Journal of Alloys and Compounds, 494, pp. 175-189, 2010.
|