鋁金屬誘發多晶矽之研究

以作者查詢圖書館館藏

、以作者查詢臺灣博碩士

、以作者查詢全國書目

、勘誤回報

、線上人數：59

、訪客IP：3.15.192.70

姓名

鄭春皇(Chun-Huang Cheng) 查詢紙本館藏

畢業系所

光電科學與工程學系

論文名稱

鋁金屬誘發多晶矽之研究
(The research of polycrystalline silicon prepared by aluminum induced crystallization)

相關論文

★ 半導體雷射控制頻率	★ 比較全反射受挫法與反射式干涉光譜法在生物感測上之應用
★ 193nm深紫外光學薄膜之研究	★ 超晶格結構之硬膜研究
★ 交錯傾斜微結構薄膜在深紫外光區之研究	★ 膜堆光學導納量測儀
★ 紅外光學薄膜之研究	★ 成對表面電漿波生物感知器應用在去氧核糖核酸及微型核糖核酸雜交反應檢測
★ 成對表面電漿波生物感測器之研究及其在生醫上的應用	★ 探討硫化鎘緩衝層之離子擴散處理對CIGS薄膜元件效率影響
★ 以反應性射頻磁控濺鍍搭配HMDSO電漿聚合鍍製氧化矽摻碳薄膜阻障層之研究	★ 掃描式白光干涉儀應用在量測薄膜之光學常數
★ 量子點窄帶濾光片	★ 以量測反射係術探測光學薄膜之特性
★ 嵌入式繼光鏡顯微超頻譜影像系統應用在口腔癌切片及活體之設計及研究	★ 軟性電子阻水氣膜之有機層組成研究

檔案

[Endnote RIS 格式]

[Bibtex 格式]

[相關文章]

[文章引用]

[完整記錄]

[館藏目錄]

[檢視]

[下載]

本電子論文使用權限為同意立即開放。
已達開放權限電子全文僅授權使用者為學術研究之目的，進行個人非營利性質之檢索、閱讀、列印。
請遵守中華民國著作權法之相關規定，切勿任意重製、散佈、改作、轉貼、播送，以免觸法。

摘要(中)

近年來，低溫多晶矽(LTPS)引起了很多人的關注。本研究旨在探討電子槍蒸鍍非晶矽膜層與射頻磁控濺鍍非晶矽膜層不同的膜質結構對鋁金屬誘發結晶矽製程的影響。首先在室溫下，利用熱電阻蒸鍍系統將鋁金屬蒸鍍到玻璃基板上，再利用電子槍蒸鍍系統或射頻濺鍍系統將非晶矽鍍到玻璃基板上，以形成glass/Al/a-Si的樣品結構，之後再使用高溫爐將樣品做熱退火處理，分別討論不同熱退火溫度與時間對矽薄膜結晶的影響。
實驗中發現，在相同的熱退火時間12小時下，電子槍蒸鍍非晶矽製程熱退火溫度(500℃以上)要比射頻磁控濺鍍非晶矽製程熱退火溫度(400℃以上)高，才會有較明顯的矽結晶現象，主要結晶晶向皆為(111)。而在相同的熱退火溫度550℃下，電子槍蒸鍍非晶矽製程熱退火時間(30分鐘以上)要比射頻磁控濺鍍非晶矽製程熱退火時間(10分鐘以上)長，才會有較明顯的矽結晶現象。

摘要(英)

In recent years, low temperature polycrystalline silicon(LTPS) attracted much attention. In this work, we investigated the effect of different silicon deposition techniques, including e-beam evaporation and RF magnetron sputtering during the process of aluminum-induced crystallization(AIC) of a-Si. First, Al layers were deposited on glass substrates at room temperature by the resistive heator. Then a-Si layers were deposited on Al layers by e-beam evaporation or RF magnetron sputtering to make glass/Al/a-Si samples. The samples were annealed in a furnace and analyzed how different annealing temperature and time influenced a-Si crystallization.
The results revealed that under the same annealing time (12 hours), the procedure of a-Si prepared by e-beam evaporation(＞500℃) had higher annealing temperature than the procedure of a-Si prepared by RF magnetron sputtering(＞400℃) to make crystalline silicon which had preferred orientation(111). Furthermore, at the same annealing temperature(550℃), the procedure of a-Si prepared by e-beam evaporation(＞30 min) had longer annealing time than the procedure of a-Si prepared by RF magnetron sputtering(＞10min) to make crystalline silicon.

關鍵字(中)

★ 鋁金屬誘發結晶
★ 熱電阻蒸鍍
★ 射頻磁控濺鍍
★ 電子槍蒸鍍
★ 低溫多晶矽

關鍵字(英)

★ low temperature polycrystalline silicon
★ aluminum-induced crystallization
★ resistive heator
★ RF magnetron sputtering
★ e-beam evaporation

論文目次

第一章緒論....................................1
1-1 前言……………………………………………………….1
1-2 多晶矽的結晶方式……………………………………….3
1-2-1 直接沉積多晶矽……………………………………3
1-2-2 固相結晶法…………………………………………3
1-2-3 準分子雷射退火法…………………………………4
1-2-4 金屬誘發結晶法……………………………………6
1-3 研究動機………………………………………………….7
第二章文獻回顧與基本理論......................8
2-1 金屬誘發結晶法………………………………………….8
2-2 鋁金屬誘發結晶的機制………………………………….9
2-3 蒸鍍原理…………………………………………………10
2-3-1 熱電阻蒸鍍原理…………………………………..10
2-3-2 電子束蒸鍍原理…………………………………..11
2-4 濺鍍原理………………………………………………...12
2-4-1 電漿原理…………………………………………..12
2-4-2 射頻磁控濺鍍原理………………………………..13
第三章實驗儀器與內容.........................16
3-1 製鍍儀器………………………………………………...16
3-1-1 電子槍蒸鍍系統…………………………………..16
3-1-2 射頻磁控濺鍍系統………………………………..17
3-1-3 高溫方型爐………………………………………..18
3-2 量測分析儀器…………………………………………....19
3-2-1 X光繞射儀………………………………………....19
3-2-2 拉曼光譜儀……………………………………….. 21
3-2-3 冷場發射掃描式電子顯微鏡/微區元素能量分析儀
……………………………………………………....23
3-3 實驗過程………………………………………………… 24
第四章實驗結果與討論..........................27
4-1非晶矽直接熱退火(無鋁金屬膜層)……………………...27
4-2鋁金屬誘發結晶矽(電子槍蒸鍍非晶矽膜層)…………...31
4-2-1改變退火溫度………………………………………31
4-2-2改變退火時間………………………………………39
4-3鋁金屬誘發結晶矽(射頻磁控濺鍍非晶矽膜層)………...45
4-3-1改變退火溫度………………………………………45
4-3-2改變退火時間………………………………………52
4-4實驗結果討論………………………………………….....58
第五章結論....................................60
參考文獻.........................................61

參考文獻

1. S. O. Kasap,“Pinciple of Electrical Engineering Materials and Devices
,” 2nd ed., McGraw-Hill Company, New York, USA,2002.
2. M. Balkanski and R. F. Wallis, “Semiconductor Physics and Applications
,” Oxford University Press Inc., New York, USA,2000.
3. P. G. Lecomber, W. E. Spear, and A. Ghaith, “Amorphous-Silicon Field
-Effect Device and Possible Application,” Electronics Letters, Vol. 15, No. 6, pp. 179-181, March, 1979.
4. Z. Shengdong, Z. Chunxiang, J. K. O. Sin, J. N. Li, and P. K. T. Mok, “Ultra-thin elevated channel poly-Si TFT technology for fully-integrated AMLCD system on glass”, IEEE Trans. Electron Devices, 47, 569 (2000).
5. N. Kubo, N. Kusumoto, T. Inushima, and S. Yamazaki, “Characterization of polycrystalline-Si thin film transistors fabricated by excimer laser annealing method,” IEEE Trans. Electron Devices, 40, 1876 (1994).
6. G. K. Giust and T. W. Sigmon, “High-performance thin-film transistors fabricated using excimer laser processing and grain engineering”, IEEE Trans. Electron Devices, 43, 561 (1996).
7. M. Cao, S. Talwar, K. J. Kramer, T. W. Sigmon, and K. C. Saraswat, “A high-performance polysilicon thin-film transistor using XeCl excimer laser crystallization of pre-patterned amorphous Si films”, IEEE Trans. Electron Devices, 43, 561 (1996).
8. O. Nast, T. Puzzer, L. M. Koschier, A. B. Sproul, and S. R. Wenham, “Aluminum-induced crystallization of amorphous silicon on glass substrates above and below the eutectic temperature”, Appl. Phys. Lett. 73, 3214 (1998).
9. K. Andrade and J. Jang, “Gold Induced Crystallization of Amorphous
Silicon”, Journal of the Korean Physical Society, 39, 376 (2001).
10. Z. Jin, G. A. Bhat, M. Yeung, H. S. Kwok, and M. Wong, “Nickel induced crystallization of amorphous silicon thin films”, J. Appl. Phys. 84, 194 (1998).
11. S. W. Lee, Y. C. Jeon, and S. K. Joo, “Pd induced lateral crystallization of amorphous Si thin films”, Appl. Phys. Lett. 66, 1671 (1995).
12. S. Iwanari and K. Takayanagi,“Surfactant epitaxy of Si on Si(111) mediated by Sn”,Jpn. J. Appl. Phys. 30,L 1978(1991).
13. G. D. Wilk, R. E. Martinez, John F. Chervinsky, Frans Spaepen, and J. A. Golovchenko,“Low-temperature homoepitaxial growth on Si(111) mediated by thin overlayers of Au”,Appl. Phys. Lett. 65, 866(1994).
14. T. K. Kim, G. B. Kim, Y. G. Yoon, C. H. Kim, B. I. Lee, and S. K. Joo,“Scanning rapid thermal annealing process for poly silicon thin film transistor”, Jpn. J. Appl. Phys. 39, 5773(2000).
15. A. Khakifirooz*, S. Haji, and S. Shamsoddin Mohajerzadeh, “UV-assisted nickel-induced crystallization of amorphous silicon ”,Thin Solid Films, 383, 241(2001).
16. H. Kim, D. Kim, G. Lee, D. Kim, and S. H. Lee,“Polycrystalline Si films formed by Al-induced crystallization(AIC) with and without Al oxides at Al/a-Si interface”,Solar Energy Materials & Solar Cells, 74, 323(2002).
17. D. Dimova-Malinovska, O. Angelov, M. Sendova-Vassileva, V. Grigorov, and J. C. Pivin,“Polycrystalline Si films on glass substrates prepared by metal induced crystallization”, IEEE 27th int. Spring Seminar On Electronics Technology, 530(2004).
18. H. Makihara, A. Tabata, Y. Suzuoki, and T. Mizutani,“Effect of the hydrogen partial pressure ratio on the properties of μc-Si:H films prepared by rf magnetron sputtering”,Vacuum, 59, 785(2000).
19. 李正中,“薄膜光學與鍍膜技術”,台北, 藝軒圖書出版社(第四版), 2004.

指導教授

李正中(Cheng-Chung Lee)

審核日期

2006-10-15

推文