| 摘要(英) |
Transparent conductive oxide layer (TCO) with good optical transmittance and conductivity, is often applied to the solar cell. Through the modulation of work function of TCO to align energy band between TCO and semiconductor, enable to improve the fill factor (FF) of the solar cell effectively. In addition, deposition of emitter layer with different machines, its passivation and absorption coefficient effect open-circuit voltage (VOC) and short circuit current density (JSC) of the solar cell respectively because of different film properties
In the first part, we use simulation software AMPS-1D to investigate the effect of the work function of ITO on heterojunction with intrinsic thin layer (HIT) solar cells. And then fabricate indium tin oxide (ITO) of the TCO film with RF magnetron sputtering process. Through different UV-ozone stripper process temperature and time, modulate the work function of ITO from 4.5 eV to 5.0 eV, and applied the result to silicon based solar cells deposited by electron cyclotron resonance chemical vapor deposition (ECR-CVD), in order to investigate its effect on optical properties, electrical properties and conversion efficiency of the solar cells. The results show that increase the work function of ITO to 5.0 eV is applied to the front ITO contacted with the emitter, will effectively improve fill factor from 0.535 to 0.594, the conversion efficiency from 9.76 % to 12.14 %; and decrease the work function of ITO to 4.5 eV is applied to the back ITO in contacted with the back surface field, will effectively improve the fill factor from 0.53 to 0.54, the conversion efficiency from 10.9 % to 11.22 %.
In the second part, we investigate the different structures of heterojunction silicon solar cells with different equipment, and its variation of optical and electrical characteristics. The results show that the emitter of heterojunction silicon solar cell deposited with PECVD get better passivation effect, improving the open circuit voltage 2.98%; and deposited with ECR-CVD have a lower resistivity and absorption, improving the short circuit current 9.25%. And improve the conversion efficiency from 9.25 % to 11.53 %. |
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