| 參考文獻 |
參考文獻
[1]International Institurte for Applied Systems Analysis, 2012.
[2]http://climate.nasa.gov/key_indicators#globalTemp
[3]https://www.theclimategroup.org/what-we-do/news-and-blogs/global-renewable-en
ergy-capacity-increased-120-since-2000
[4]https://commons.wikimedia.org/wiki/File:Price_history_of_silicon_PV_cells_since
_1977.svg
[5] S. Pizzini, "Towards solar grade silicon: Challenges and benefits for low cost
photovoltaics", Solar Energy Materials & Solar Cells, 94, 1528-1533, 2010.
[6] D. Macdonald, "PHOSPHORUS GETTERING IN MULTICRYSTALLINE
SILICON STUDIED BY NEUTRON ACTIVATION ANALYSIS", IEEE, 2,
0-7803-7471-1, 2002.
[7]M. Kerr and A. Cuevas, “General parameterization of Auger recombination in
crystalline silicon”, Journal of Applied Physics, 91, 2473-2481 ,2002.
[8] S. Muramatsu., et al., “Effect of hydrogen radical annealing on SiN passive solar
cells”. Solar Energy Materials and Solar Cells., 65, 599-606 ,2001.
[9] Y. Lee et al., “Stability of SiN X /SiN X double stack antireflection coating for single
crystalline silicon solar cells”. Nanoscale Research Letters, 7, 1-6 ,2012.
[10] S. Dauwe, L.Mittelstadt, A. Metz, and R. Hezel “Experimental evidence of
parasitic shunting in silicon nitride rear surface passivated solar cells”. Progress in
photovoltaics, 10, 271-278, ,2002.
[11] S. Salemi et al., “The effect of defects and their passivation on the density of
states of the 4H-silicon-carbide/silicon-dioxide interface”, Journal of Applied Physics
113,053703 ,2013.
[12] L.S.Chang, P.L. Gendler, and J.H. Jou, “Thermal, mechanical and chemical 54
effects in the degradation of the plasma-deposited alpha-rich passivation layer in a
multilayer thin-film device”. Journal of Materials Science, 26, 1882-1890 ,1999.
[13] J.H. Jang and K.S. Lim, “Post hydrogen treatment effects of boron-doped
a-SiC:H p-layer of a-Si:H solar cell using a mercury-sensitized photo-chemical vapor
deposition method”, Japanese journal of applied physics part 1-regular papers short
notes & review papers, 36, 6230-6236 ,1997.
[14] S. Sepeai et al., “Surface passivation studies on n +
pp
+
bifacial solar cell”.
International Journal of Photoenergy, 10, 1155-1162, 2012.
[15] J.D. Alamo, J.V. Meerbergen, F. d′Hoore, J. Nijs, “High-low junctions for solar
cell applications”. Solid-State Electronics, 24, 533-538 ,1980.
[16] M. P. Godlewski, C. R. Baraona, W. Henry , “Low-high junction theory applied
to solar cells”, 10th Photovoltaic Specialists′ Conf., IEEE, 29, 131-150, 1990.
[17] https://www.newport.com/f/solar-simulator-accessories
[18] http://pveducation.org/pvcdrom/properties-of-sunlight/atmospheric-effects
[19] http://www.slideshare.net/maliksameeullah/solar-pv-cell-31223997
[20] S. Park, S. Bae, H. Kim, S. Kim, D.Y. Kim, H. Park, S.Kim, S.J. Tark, C.S. Son,
D. Kim, “Effects of controllable process factors on Al rear surface bumps in Si solar
cells”, Current Applied Physics, 12, 17-22,2012.
[21]http://www.solarchoice.net.au/blog/news/quiet-innovations-keeping-screen-printe
d-solar-cells-on-top-080215
[22] J. Zhao, A. Wang, M.A. Green , “High efficiency PERL silicon solar cells on FZ
and MCZ substrates”, Technical digest of the 11th International Photovoltaic Science
and Engineering Conference, 65, 429-435 ,2001.
[23] S. Gatz, K. Bothe, J. Mueller, T. Dullweber, and R. Brendel, “Analysis of local
Al-doped back surface fields for high efficiency screen-printed solar cells”, Energy 55
Procedia, 8, 318–323 ,2011.
[24] A.U. Rehman, S.H. Lee “Review of the Potential of the Ni/Cu Plating Technique
for Crystalline Silicon Solar Cells” Materials, 7(2), 1318-1341, 2014
[25] http://www.panasonic.com/global/home.html
[26] A.U. Rehman, S.H. Lee “ Advancements in n-Type Base Crystalline Silicon
Solar Cells and Their Emergence in the Photovoltaic Industry”, The Scientific World
Journal, 470437, 2013
[27] http://www.pv-tech.org/solar-media-store-shutdown
[28] http://old.hssyxx.com/zhsj/kexue-2/co6-2/6-21/206.htm
[29] M. wolf, H. Rauschenbach, Advanced energy conversion, 3, 455-479 ,1963
[30] S.O. Kasap “Optoelectronics and Photonics Principles and Practices, Prentice –
Hall”, 2001.
[31] H. Hoppe, N. S. Sariciftci, “Organic solar cells”, Journal of materials research,
19, 1924-1945 ,2004.
[32] B. Fischer, “Loss analysis of crystalline silicon solar cells using
photo-conductance and quantum efficiency measurements”, PhD Thesis, University
of Konstanz , 2003.
[33] R. Schimpe, “Theory of reflection at the facet of a semiconductor-laser”,
International Journal of Electronics and Communications, 46, 80-85 ,1992.
[34] A. Das, "Development of high-efficiency boron diffused silicon solar cells", PhD
dissertation, Atlanta, Georgia, Georgia: Institute of Technology, School of Electrical
and Computer Engineering, 2012
[35] A. G. Aberle, Crystalline silicon solar cells: advanced surface passivation and
analysis, University of New South Wales, Sydney NSW 2052, 1999.
[36] J. P. Colinge and C. A. Colinge, “Physics of semiconductor devices”, Kluwer
academic publishers, 2005. 56
[37] S. M. Sze, and K. K. Ng, “Physics of semiconductor devices”, John Wiley &
Sons, Inc., Hoboken, NJ, USA. 2006.
[38] S.J. Choi, et al., “The electrical properties and hydrogen passivation
effect in monocrystalline silicon solar cell with various pre-deposition
times in doping process”, Renewable Energy, 54, 96-100 ,2013.
[39] A. B. Sproul, M. A. Green, and A. W. Stephens, “Accurate determination of
minority carrier-and lattice scattering-mobility in silicon from photo-conductance
decay”, J. Appl. Phys., 72, 4161-4171 ,1992.
[40] M. S. Tyagi and R. V. Overstraeten, “Minority carrier recombination in heavily
doped silicon”, Solid-St. Electron., 26, 577-597 ,1983.
[41] M. J. Kerr and A. Cuevas, “General parameterization of Auger recombination in
crystalline silicon”, J. Appl. Phys., 91, 97-104 ,2002.
[42] W. Shockley and W. Read, “Statistics of the Recombination of holes and
electrons”, Phys. Rev., 87, 835-842 ,1952.
[43] I. Martín, M. Vetter, M. Garín, A. Orpella, C. Voz, J. Puigdollers, and R.
Alcubilla “Crystalline silicon surface passivation with amorphous SiCx:H films
deposited by plasma-enhanced chemical-vapor deposition”, Journal of
Applied Physics, 98, 114912-114921 ,2005.
[44] M. Kerr and A. Cuevas, “General parameterization of auger recombination in
crystalline silicon”, Journal of Applied Physics, 91, 2473-2481 ,2002.
[45] S. Dauwe, “Low-temperature surface passivation of crystalline Silicon and its
application to the rear side of solar cells”, harderberg ,2004.
[46] H. Park et al, “Effect of the phosphorus gettering on si heterojunction solar cells“,
International Journal of Photoenergy, 794867, 2012.
[47] G. Singh, V. Amit, R. Jeyakumar “Fabrication of c-Si solar cells using boric acid 57
as a spin-on dopant for back surface field“, The Royal Society of Chemistry, 4, 4225–
4229 ,2014.
[48] A. Das, "Development of high-efficiency boron diffused silicon solar cells", PhD
dissertation, Atlanta, Georgia, Georgia: Institute of Technology, School of Electrical
and Computer Engineering , 2012.
[49] J. Peter , "The influence of diffusion-Induced dislocations on high efficiency
silicon solar cells", IEEE Transactions on electron devices, 53, 3 ,2006.
[50] H. Park et al, “Effect of the phosphorus gettering on si heterojunction solar cells“,
International Journal of Photoenergy, 794867 ,2012.
[51] K.S. Ryu, “DEVELOPMENT OF LOW-COST AND HIGH-EFFICIENCY
COMMERCIAL SIZE N-TYPE SILICON SOLAR CELLS”. PhD
dissertation ,Georgia Institute of Technology , 2015
[52] V. D. Mihailetchi, Proc. 25
th
Eur. Photovoltaic Sci. Eng. Conf., 1446–1448 ,2010.
[53] G. Singh, The Royal Society of Chemistry, 4, 4225–4229 ,2014.
[54] J. LIBAL. et al., Proceedings of the 22
th
European Photovoltaic Solar Energy
Conference, 1382-1386 , 2007.
[55] J. Y. Lee and S. W. Glunz, Proc. 19
th
EU-PVSEC, 998-1001 ,2004.
[56] G. Bueno, Proc. 20
th
EU-PVSEC, 1458-1461 ,2005.
[57] A. Das, "Development of high-efficiency boron diffused silicon solar cells", PhD
dissertation, Atlanta, Georgia, Georgia: Institute of Technology, School of Electrical
and Computer Engineering , 2012.
[58] C. Gao, Y. Lu, P. Dong, J. Yi, X. Ma, and D. Yang, “Boron deactivation in
heavily boron-doped Czochralski silicon during rapid thermal anneal: Atomic level
understanding”, Applied Physics Letters, 104, 032102 ,2014.
[59] F. Ma et al, “Two-dimensional numerical simulation of boron diffusion for pyramidally textured silicon”, J. Appl. Phys., 116, 184103 ,2014.
[60] B. Bazer-Bachi et al., “Higher emitter quality by reducing inactive phosphorus”,
Solar Energy Materials & Solar Cells, 105, 137-141 ,2012.
[61]T. Joge et al, “Low-Temperature Boron Gettering for Improve the Carrier
Lifetime in Fe-Contaminated Bifacial Silicon Cells with n
+
pp
+
Back-Surface-Field
Structure”, Jpn. J. Appl. Phys., 42, 5397-5404 ,2003.
[62] Y. Wu, X. Yu, H. He, P. Chen and D. Yang “Suppression of boron-oxygen
defects in Czochralski silicon by carbon co-doping”, Applied Physics Letters, 106,
102105 ,2015.
[63] N. Ganagona, L. Vines, E. V. Monakhov, and B. G. Svensson, “Transformation
of divacancies to divacancy-oxygen pairs in p-type Czochralski-silicon mechanism of
divacancy diffusion”, J. Appl. Phys., 115, 034514 ,2014.
[64] D. Kumar, S. Saravanan and P. Suratkar ”Effect of oxygen ambient during
phosphorous diffusionon silicon solar cell”, Journal of Renewable and Sustainable
Energy 4 ,033105, 2012 |
[Endnote RIS 格式]
[相關文章]
[文章引用]
[完整記錄]
[館藏目錄]
[檢視]
plurk
funp
live
udn
HD
myshare
netvibes
friend
youpush
delicious
baidu
Google bookmarks
del.icio.us
hemidemi
facebook
twitter
google
reddit