超薄ITO透明導電膜應用在觸控面板之研究

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姓名

蔡宗典(Tsung-tien Tsai) 查詢紙本館藏

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光電科學研究所碩士在職專班

論文名稱

超薄ITO透明導電膜應用在觸控面板之研究
(Reliability and Stability in Electrical Properties of Ultra-thin ITO for Touch Panel Application)

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摘要(中)

本文使用直流磁控濺鍍在玻璃基板表面沉積ITO透明導電膜，研究超薄的ITO膜厚從2nm到100nm的電阻率、穿透率、微觀結構、表面粗糙度等薄膜特性，以及探討在觸控面板上的環境耐久性與ITO鍍膜製程的關係。
氧化銦錫(ITO)在可見光區擁有高穿透率以及低電阻率的透明導電膜，通常應用在平面顯示器的電阻率約2E-4Ωcm。但是應用在觸控面板的透明導電膜需要較高的電阻率(常見的面阻抗約300 ~1000Ω)，為了得到較高的面電阻，透明導電膜的膜厚需要變得很薄，而膜厚太薄的薄膜會產生許多問題，包括電性的不穩定、面阻抗的不均勻、環境測試能力變差，本論文即要探討研究此改善方向，先針對ITO膜厚對於其結構與光電特性之研究，並且透過調整反應氣體O2的含量以及濺鍍功率密度來改善ITO薄膜特性，以符合觸控面板的透明導電膜之要求。
實驗結果可知，ITO薄膜在膜厚為8nm、濺鍍功率密度為0.38 w/cm2、氧氣含量2.6%，可達到穿透率大於91%，面阻抗值為500Ω/□之ITO導電玻璃，並可符合觸控面板所要求的耐高溫測驗(160℃，30分鐘)、恆溫恆濕測驗(60℃，90%相對濕度，240小時)、以及耐鹼測驗(NaOH 5%，10分鐘)。

摘要(英)

This study uses DC magnetron sputtering to deposit indium tin oxide(ITO) thin film on a soda-lime glass surface to study thin-film properties of an ultra-thin ITO that have a thin-film thickness of 2nm-100nm,Resistivity, transmittance, thin-film structure morphology and surface roughness were determined. This study also examines the relationship between ITO coating processes and reliability testing.
Indium tin oxide is a transparent conducting thin film that has a highly visible transmission and low resistivity. In Flat Panel Display applications, ITO resistivity is typically 2E-4Ωcm. However, in the touch panel applications, the transparent conductivity oxide (TCO) film requires high resistivity (sheet resistance is approximately 300-1000Ω). To increase sheet resistance, the TCO film should be thin; however, this has many disadvantages, including unstable electrical properties, non-uniform sheet resistance, and poor reliability and durability. This study attempts overcome these problems. This study investigated the effects of various ITO thicknesses on thin-film structure and photoelectric properties, and then fine tuned optimal oxygen gas flow and deposition power density to improve ITO thin-film properties, such that they meet touch panel requirements.
Experiments results demonstrate that an ITO thickness of 8nm was deposited using a coating process with a power density of 0.38 w/cm2 and oxygen gas flow of 2.6%, that has 91% transmittance and a sheet resistance of 500Ω/□, the ITO thin film also passed all reliability tests, including heat testing (160℃, 30 mins), humidity testing (60℃, 90%RH, 240hrs) and alkaline testing (NaOH 5%, 10mins).

關鍵字(中)

★ 觸控面板
★ 氧化銦錫
★ 濺鍍

關鍵字(英)

★ sputter coating
★ Touch Panel
★ Indium Tin Oxide

論文目次

摘要 I
Abstract II
目錄 III
圖目錄 VI
表目錄 VIII
第一章緒論 1
1-1研究動機與目的 1
1-2 文獻回顧 2
第二章基本理論 5
2-1氧化銦錫(ITO)透明導電膜之特性 5
2-1-1 簡介 5
2-1-2 電性 6
2-1-3 光學特性 8
2-2磁控濺鍍機制 11
2-2-1 濺鍍原理 11
2-2-2 直流輝光放電 11
2-2-3 磁控濺鍍 14
2-3薄膜成長 15
2-3-1 薄膜成長過程 15
2-3-2 薄膜之微結構 17
2-4觸控式螢幕種類 18
2-4-1 電阻式 19
2-4-2 電容式 21
2-4-3 波動式 22
第三章實驗儀器與架構 24
3-1濺鍍系統 24
3-2量測系統 27
3-2-1 面電阻量測 27
3-2-2 光譜儀 27
3-2-3 橢圓儀 28
3-2-4 原子力顯微鏡(AFM) 28
3-2-5 掃瞄式電子顯微鏡(SEM) 29
3-2-6 能量散佈光譜儀(EDX) 30
3-2-7 環境測試機台 30
第四章實驗結果與分析 31
4-1 ITO膜厚與電阻率的關係 31
4-2 ITO膜厚與穿透率的關係 32
4-3 不同膜厚的ITO薄膜表面特徵 34
4-4 不同ITO膜厚之元素分析 37
4-5 不同ITO膜厚之表面粗糙度比較 38
4-6 ITO膜厚與環境測試的結果 39
4-7 氧氣的影響 41
4-8 濺鍍功率密度的影響 45
第五章結論 46
Conclusion 49
參考文獻 50

參考文獻

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指導教授

李正中(Cheng-Chung Lee)

審核日期

2008-7-22

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