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姓名 陳雅雯(Ya-Wen Chen) 查詢紙本館藏 畢業系所 電機工程學系 論文名稱 應用於生理訊號偵測之可調式增益與頻寬讀取電路
(A Design of Read-out Circuit with Programmable Gain and Bandwidth for Bio-signal Detection)相關論文 檔案 [Endnote RIS 格式]
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摘要(中) 隨著無線傳輸技術純熟與網際網路的普及，使得可攜帶的電子產品成為主流，近年來更搭配應用於日常生理訊號的監控與醫療照護，透過感測器偵測人體心跳、肌力等數據，再將數據傳輸至不同的系統介面，但是因為生理訊號極微小，為了能夠完整的放大訊號並應用於可攜式裝置，因此電路設計需朝向低雜訊、低功耗等目標。
本文實現一應用於生理訊號偵測的類比前端放大電路，電路架構採用AC coupling的方式，阻絕電極貼片所造成的直流偏移電壓，電路中將電晶體操作於弱反轉區以降低功耗與雜訊，且利用可調式的虛擬電阻形成低頻極點，並針對不同的生理訊號可選擇適當的增益與頻寬，避免電路發生飽和的情況。
本文採用台積電TN90GUTM CMOS 1P9M 製程實現電路，晶片面積約占0.437 mm2(包含Pad)，電源供應電壓為1 V，整體電路功耗約8.96 μW(包含偏壓電路)，應用頻寬為10 KHz，為了固定輸出訊號大小以利於後端電路的設計，因此當輸入訊號為不同的振幅時，可透過電路中的可調增益放大器將訊號放大至相同的振幅大小，為此當輸入訊號各別為0.3 mV、0.5 mV、1 mV 且頻率皆為250Hz時，為配合達到相同的輸出振幅大小，整體放大器增益各別須為57.6、53.2、47.3 dB，低頻截止頻率點為12.2 Hz，輸入雜訊為20.5 μVrms，雜訊效率因素(NEF)為20.98。摘要(英) With the popularity of the wireless transmission technology and the Internet, the portable electronic products are the mainstream in the market. In recent years, the portable products with the bio-signal acquisition have been applied in daily monitoring and healthcare. Through the sensor detects the heartbeat, muscle and other data of the human, then transmit the bio-signal data to different system interfaces. In order to completely amplify the tiny bio-signal and apply in portable devices, the circuit design is required to be low noise and low power consumption.
This thesis presents a design of read-out circuit for bio-signal detection. AC coupling structure is employed to block the DC offset which is caused by the electrode. The MOS operates in weak inversion to reduce noise and power consumption. Besides, the circuit uses the pseudo resistor to achieve the low-cutoff frequency pole, and also affords programmable gain and bandwidth for different bio-signal to avoid the saturation situation.
The circuit is implemented by TSMC TN90GUTM CMOS 1P9M process and the chip area is 0.437 mm2 (including the PAD). Power consumption is about 8.96 μW for 1 V power
supply (bias circuit is included) and application bandwidth is 10 KHz. When the input signal frequency is 250Hz, the gain of the circuit can achieve 57.6、53.2、47.3 dB in three different amplitudes (0.3 mV, 0.5 mV, 1 mV). The low-cutoff frequency pole is 12.2 Hz. The input-referred noise is 20.5 μVrms (11 Hz – 10 KHz) and the NEF is 20.98.關鍵字(中) ★ 低雜訊類比前端電路
★ 可調式增益放大器
★ 虛擬電阻
★ 弱反轉區關鍵字(英) ★ Low-noise Bioamplifier
★ Programmable gain Bioamplifier
★ Pseudo-resistor
★ Subthreshold Region論文目次 摘要 ............................................................................................................................................ I
Abstract ....................................................................................................................................II
致謝 ......................................................................................................................................... III
目錄 ......................................................................................................................................... IV
圖目錄
..................................................................................................................................... VI
表目錄
.................................................................................................................................. VIII
第一章緒論 ........................................................................................................................1
1.1 研究背景 .................................................................................................................... 1
1.2 研究動機 .................................................................................................................... 2
1.3 論文架構 .................................................................................................................... 3
第二章生醫訊號與需求考量
............................................................................................5
2.1 生理訊號類別 ............................................................................................................ 5
2.2 類比前端放大器之電路系統規格與需求 ................................................................ 6
2.3 非理想效應 ................................................................................................................ 8
2.3.1 熱雜訊 (Thermal noise) .................................................................................... 8
2.3.2 閃爍雜訊 (Flicker noise) ................................................................................... 9
2.3.3 環境雜訊 (Background noise) ........................................................................ 10
2.3.4 直流偏移電壓 (DC offset) .............................................................................. 10
2.4 低雜訊電路技術 ...................................................................................................... 11
2.4.1 自動歸零技術 (Auto-zero technique) ............................................................. 11
2.4.2 截波穩定技術 (Chopper stabilization technique，CHS) ................................ 12
第三章類比前端放大器架構探討
..................................................................................13
3.1 傳統儀表放大器 (Instrument amplifier，IA) ........................................................ 13
3.2 交流耦合放大器 (AC coupled amplifier) ............................................................... 14
3.3 T 型架構放大器 ....................................................................................................... 15
V
3.4 可調式增益放大器 (Programmable gain amplifier，PGA) .................................. 18
第四章可調式增益與頻寬類比前端器
..........................................................................21
4.1 電路架構 .................................................................................................................. 21
4.1.1 第一級放大器 .................................................................................................. 22
4.1.2 第二級放大器 .................................................................................................. 23
4.2 電路架構 .................................................................................................................. 24
4.2.1 運算轉導放大器 .............................................................................................. 24
4.2.2 共模回授電路 .................................................................................................. 31
4.2.3 偏壓電路 .......................................................................................................... 34
4.2.4 虛擬電阻架構 .................................................................................................. 35
第五章晶片模擬、佈局、量測與改善
..........................................................................41
5.1 規格變動 .................................................................................................................. 41
5.2 模擬與佈局 .............................................................................................................. 42
5.3 量測考量與結果 ...................................................................................................... 56
5.3.1 量測環境 .......................................................................................................... 56
5.4 晶片改善 .................................................................................................................. 58
5.4.1 漏電流雜訊 (Leakage noise) .......................................................................... 58
5.4.2 溫度變異與供應電壓變異 .............................................................................. 61
5.4.3 模擬與佈局 ...................................................................................................... 63
第六章結論與未來展望
..................................................................................................79
6.1 結論 .......................................................................................................................... 79
6.2 未來展望 .................................................................................................................. 80
參考文獻
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International Solid-State Circuits Conference, pp. 300–302, 20-24 Feb. 2011.指導教授 薛木添(Muh-Tian Shiue) 審核日期 2016-7-21 推文 plurk
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