參考文獻 |
[1] Uhlir A, "Electrolytic shaping of germanium and silicon‚"Bell System Technical Journal, vol. 35(2), pp. 333-347, 1956.
[2] Fuller C S, Ditzenberger J A, "Diffusion of donor and acceptor elements in silicon‚" Journal of Applied Physics, vol. 27(5), pp. 544-553, 1956.
[3] Turner D R, "Electropolishing silicon in hydrofluoric acid solutions," Journal of the electrochemical Society, vol. 105(7), pp. 402-408, 1958.
[4] Archer R J, "Stain films on silicon," Journal of Physics and Chemistry of Solids, vol . 14, pp. 104-110, 1960.
[5] Watanabe Y, Arita Y, Yokoyama T, Igarashi Y, "Formation and properties of porous silicon and its application," Journal of the Electrochemical society, vol. 122(10), pp. 1351-1355, 1975.
[6] Beale M I J, Benjamin J D, Uren M J, Chew N G, Cullis A G, "An experimental and theoretical study of the formation and microstructure of porous silicon, " Journal of Crystal Growth, vol.73(3), pp. 622-636, 1985.
[7] Beale M I J, Chew N G, Uren M J, Cullis A G, Benjamin J D, "Microstructure and formation mechanism of porous silicon, " Applied Physics Letters, vol. 46(1), pp. 86-88, 1985.
[8] Smith R L, Chuang S F, Collins S D, "A theoretical model of the formation morphologies of porous silicon," Journal of Electronic Materials, vol. 17(6), pp. 533-541, 1988.
[9] Smith R L, Collins S D, "Generalized model for the diffusion-limited aggregation and Eden models of cluster growth, "Physical Review A, vol. 39(10), pp. 5409-5413, 1989
[10] Smith R L, Collins S D, "Porous silicon formation mechanisms," Journal of Applied Physics, vol. 71(8), pp. R1-R22, 1992
[11] Read A J, Needs R J, Nash K J, Canham L T, Calcott P D J, Qteish A, "First-principles calculations of the electronic properties of silicon quantum wires, " Physical review letters, vol. 69(8), pp. 1232-1235, 1992.
[12] Sanders G D, Chang Y C, "Theory of optical properties of quantum wires in porous silicon," Physical Review B, vol. 45(16), pp. 9202, 1992. [13] Lehmann V, Gösele U, "Porous silicon formation: a quantum wire effect," Applied Physics Letters, vol. 58(8), pp. 856-858, 1991.
[14] Dimova-Malinovska D, Sendova-Vassileva M, Tzenov N, Kamenova M, "Preparation of thin porous silicon layers by stain etching," Thin Solid Films, vol. 291(1), pp. 9-12, 1997.
[15] Li X, Bohn P W, " Metal-assisted chemical etching in HF/H2O2 produces porous silicon," Applied Physics Letters, vol. 77(16), pp. 2572-2574, 2000.
[16] Smith Z R, Smith R L, Collins S D, "Mechanism of nanowire formation in metal assisted chemical etching," Electrochimica Acta, vol. 92, pp. 139-147,2013.
[17] Qiu T, Chu P K, "Self-selective electroless plating: An approach for fabrication of functional 1D nanomaterials," Materials Science and Engineering: R: Reports, vol. 61(1), pp. 59-77, 2008.
[18] Huang Z, Fang H, Zhu J, "Fabrication of silicon nanowire arrays with controlled diameter, length, and density," Advanced materials, vol. 19(5), pp. 744-748, 2007.
[19] Peng K, Fang H, Hu J, Wu Y, Zhu J, Yan Y, Lee S T, "Metal‐Particle‐Induced, Highly Localized Site‐Specific Etching of Si and Formation of Single‐Crystalline Si Nanowires in Aqueous Fluoride Solution," Chemistry–A European Journal, vol. 12(30), pp. 7492-7947, 2006.
[20]張家彬,“以自發性化學輔助蝕刻法製備矽奈米結構成長控制之研究”,國立中央大學 能源工程所(2010)
[21] Huang Z, Geyer N, Werner P, Boor J, Gösele U, "Metal‐assisted chemical etching of silicon: a review," Advanced materials, vol. 23(2), pp. 285-308, 2011.
[22] Peng K Q, Yan Y J, Gao S P, Zhu J, "Synthesis of large-area silicon nanowire arrays via self-assembling nanoelectrochemistry," Advanced Materials, vol.14(16), pp. 1164-1167, 2002.
[23] Huang Z, Zhang X, Reiche M, Liu L, Lee W, Shimiza T,Senz S, Gösele U, "Extended arrays of vertically aligned sub-10 nm diameter [100] Si nanowires by metal-assisted chemical etching," Nano letters, vol. 8(9), pp. 3046-3051, 2008.
[24] Huang Z, Shimizu T, Senz S, Stephan S, Zhang Z, Zhang X,Lee W, Geyer N, Gösele U, "Ordered arrays of vertically aligned [110] silicon nanowires by suppressing the crystallographically preferred< 100> etching directions," Nano letters, vol. 9(7), pp. 2519-2525, 2009.
[25] Huang Z, Shimizu T, Senz S, Zhang Z, Geyer N, Gösele U, "Oxidation rate effect on the direction of metal-assisted chemical and electrochemical etching of silicon," The Journal of Physical Chemistry C, vol. 114(24), pp. 10683-10690, 2010. |