氮化鋁鎵/氮化鎵場效電晶體之磊晶表面層研究

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李智皓(Chih-Hao Li) 查詢紙本館藏

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論文名稱

氮化鋁鎵/氮化鎵場效電晶體之磊晶表面層研究
(The Investigation of AlGaN/GaN FETs with Different Cap Layers)

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摘要(中)

本論文內容主要探討氮化鋁鎵/氮化鎵場效電晶體使用不同的磊晶表面層對電性的影響進行分析。實驗研究部分分為兩個主題， (1)使用不同活化條件的p型氮化鎵磊晶表面層製作的蕭特基閘極場效電晶體，元件製作前先經過分別為700度5/10/15分鐘氮氣環境中進行活化條件，實驗目的為利用不同的活化條件來活化摻雜於氮化鎵磊晶表面層內的鎂離子，進而改善元件閘極漏電流與暫態特性。(2)使用三種磊晶表面層製作的氮化鋁鎵/氮化鎵金氧半場效電晶體，分別為氮化鎵磊晶表面層(GaN cap)、 p型氮化鎵磊晶表面層(p-GaN cap)、氮化矽磊晶表面層(in-situ SiN cap) ，實驗目的為利用不同的磊晶表面層來提升元件的崩潰電壓和改善元件的閘極漏電流與暫態特性，並尋求取代GaN cap的材料。
不同活化條件的p型氮化鎵磊晶表面層製作的蕭特基閘極場效電晶體，其中p-GaN cap在700℃15分鐘氮氣環境中進行活化條件所製作的元件上有低的閘極漏電流2.74×10-6 A、(I_on/I_off )電流比值為9.06×107、低的次臨界斜率76 mV/dec、較小的電流崩塌現象、和最大的元件崩潰電壓(在汲極電流1 mA/mm下約為1380 V)。其在動態特性方面，元件在汲極電壓100 V下動態電阻比值皆比p-GaN cap 700℃- 10 min與p-GaN cap 700℃- 5 min好。最後利用矽基板偏壓的方式去觀察元件在進行切換開關時電子被表面缺陷或緩衝層缺陷捕捉的情形，其中在p-GaN cap 700℃- 15 min活化條件下的元件在量測結果上觀察到有較不嚴重的表面缺陷暫態行為。
三種磊晶表面層製作的氮化鋁鎵/氮化鎵金氧半場效電晶體，具備in-situ SiN cap元件上有低的閘極漏電流4.16×10-8 A、(I_on/I_off )電流比值為3.83×109、低的次臨界斜率91 mV/dec、較小的電流崩塌現象、較低的介面缺陷密度(Dit)值、最大的元件崩潰電壓(在汲極電流1 mA/mm下約為1248 V)。在動態特性方面，in-situ SiN cap元件在汲極電壓100 V下動態電阻比值皆比p-GaN cap與GaN cap元件好。最後利用矽基板偏壓的方式去觀察元件在進行切換開關暫態分析時，電子被表面缺陷或緩衝層缺陷捕捉的影響程度，其中在in-situ SiN cap元件在量測結果上觀察到比其他二種磊晶表面層元件有較少的表面缺陷，但有較多的緩衝層缺陷，推論元件特性受到表面缺陷影響較大。雖然具p-GaN cap元件的特性比in-situ SiN cap元件較差，但是特性相近，而傳統GaN cap元件特性遠不如上述二種。

摘要(英)

This study focused on AlGaN/GaN FETs with different cap layers. There were two main parts in this research: (1) HEMTs with p-GaN cap under different activation conditions before device fabrication including 5/10/15 minutes in N2 at 700℃. The purpose was to activate Mg ions in p-GaN cap layer to improve performance on gate leakage and dynamic characteristics. (2) AlGaN/GaN MIS-HEMTs with three kinds of caps including GaN cap, p-GaN cap and in-situ SiN cap. The purpose was to reduce gate leakage, enhance breakdown voltages and dynamic characteristics by alternative cap-layers.
HEMTs with p-GaN cap under different activation conditions showed device with 700C-15min activation has best performanve. Gate leakage of 2.74×10-6 mA/mm, (Ion /????) current ratio of 9.06×107, 76 mV/dec of Subthreshold Swing, and breakdown voltage of 1380 V were observed. For transient characteristics, device with 700C-15min activation showed best performance among all activation conditions.
MIS-HEMT with in-situ SiN cap showed gate leakage of 4.16×10-8 mA/mm, (Ion /????) current ratio of 3.83×107, Subthreshold Swing of 91 mV/dec and breakdown voltage of 1248 V. For transient characteristics, MIS-HEMT with in-situ SiN cap showed the best performance than devices with p-GaN and GaN caps when stress drain voltages being less than 100 V. By using substrate bias scheme, surface trapping behavior is more significant than buffer traps in transient characteristics in this study. Although MIS-HEMT with in-situ SiN cap showed the best performance in DC and transient characteristics, but MIS-HEMT with p-GaN cap showed similar characteristics. Oppoaitely, MIS-HEMT with GaN cap showed the worst device characteristics.

關鍵字(中)

★ 氮化鋁鎵/氮化鎵場效電晶體
★ 磊晶表面層
★ 氮化鋁鎵/氮化鎵
★ 場效電晶體

關鍵字(英)

★ AlGaN/GaN FETs
★ Different Cap Layers
★ AlGaN/GaN
★ FETs

論文目次

摘要 I
Abstract III
致謝 IV
圖目錄 VII
表目錄 XIII
第一章緒論 1
1.1前言 1
1.2氮化鋁鎵/氮化鎵場效電晶體發展與相關表面製程相關研究 3
1.3本論文研究動機與目的 9
1.4論文架構 10
第二章氮化鋁鎵/氮化鎵場效電晶體於矽基板上之結構設計及材料特性分析 11
2.1前言 11
2.2氮化鋁鎵/氮化鎵於矽基板之磊晶結構 11
2.3 X-射線繞射儀量測觀察磊晶品質 15
2.4霍爾量測與分析 19
第三章氮化鋁鎵/氮化鎵場效電晶體特性分析與比較 21
3.1前言 21
3.2氮化鋁鎵/氮化鎵蕭特基場效電晶體製作流程 21
3.3氮化鋁鎵/氮化鎵蕭特基閘極場效電晶體直流電性分析 24
3.4氮化鋁鎵/氮化鎵蕭特基閘極場效電晶體脈衝量測與特性分析 42
3.5氮化鋁鎵/氮化鎵蕭特基閘極場效電晶體動態電阻介紹與暫態特性分析 49
3.6氮化鋁鎵/氮化鎵蕭特基閘極場效電晶體變溫動態電阻量測分析與比較 56
3.7氮化鋁鎵/氮化鎵蕭特基閘極場效電晶體之矽基板偏壓下量測手法簡介與暫態特性分析 62
3.8氮化鋁鎵/氮化鎵蕭特基閘極場效電晶體之矽基板偏壓下變溫特性 70
3.9結論 82
第四章氮化鋁鎵/氮化鎵金氧半場效電晶體特性分析與比較 85
4.1前言 85
4.2氮化鋁鎵/氮化鎵金氧半場效電晶體製作流程 85
4.3氮化鋁鎵/氮化鎵蕭特基閘極場效電晶體直流電性分析 87
4.4氮化鋁鎵/氮化鎵金氧半場效電晶體脈衝量測與特性分析 98
4.5氮化鋁鎵/氮化鎵金氧半電容介紹與萃取介面缺陷密度 101
4.6氮化鋁鎵/氮化鎵金氧半場效電晶體動態電阻介紹與暫態特性分析 107
4.7氮化鋁鎵/氮化鎵金氧半場效電晶體變溫動態電阻量測分析與比較 110
4.8氮化鋁鎵/氮化鎵蕭特基閘極場效電晶體之矽基板偏壓下量測手法簡介與暫態特性分析 116
4.9氮化鋁鎵/氮化鎵蕭特基閘極場效電晶體之矽基板偏壓下變溫特性 121
4.10結論 133
第五章結論與未來展望 136
參考文獻 138
附錄Ⅰp-GaN 700℃-15 min MISHEMT特性 143

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指導教授

辛裕明(Yue-Ming Hsin)

審核日期

2016-8-30

推文