參考文獻 |
[1]C.Honsberg, O. Jani, A. Doolittle, E.Trybus, G.Namkoong, I. Ferguson, D. Nicole, and A. Payne, “InGaN– A NEW SOLAR CELL MATERIAL”, Proceedings of the 19th European Photovoltaic Science and EngineeringConference,p. 15-20, Paris, France, June 7-11, 2004
[2] J. Wu, W. Walukiewicz, W. Shan, K. M. Yu, J. W. Ager III, E. E. Haller, Hai Lu, and William J. Schaff, “Effects of narrow band gap on the properties of InN”, PHYSICAL REVIEW B, 66, 201403, November 2002
[3] J. Wu, W.Walukiewicz, W. Shan, K. M. Yu, J. W. Ager III, S. X. Li, E. E. Haller, Hai Lu, and William J. Schaff, “Temperature dependence of the fundamental band gap of InN”, JOURNAL OF APPLIED PHYSICS, Vol. 94, No. 7, October, 2003
[4] J. Wu, W.Walukiewicz, K. M. Yu, J. W. Ager III, E. E. Haller, Hai Lu, and William J. Schaff, “Small band gap bowing in 〖In〗_(1-x) 〖Ga〗_x N alloys”, Appl. Phys. Lett., Vol. 80, No. 25, April, 2002
[5] R. R. Pelá, C. Caetano, M. Marques, L. G. Ferreira, J. Furthmüller, and L. K. Teles, “Accurate band gaps of AlGaN, InGaN, and AlInN alloys calculations based on LDA-1/2 approach”, Appl. Phys. Lett., 98, 151907, April, 2011
[6] A. G. Bhuiyan, K. Sugita, A. Hashimoto, and A. Yamamoto, “InGaN Solar Cells: Present State of the Art and Important Challenges”, IEEE J. of Photovoltaics, Vol. 2, No.3, July, 2012
[7] J. F. Muth, J. H. Lee, I. K. Shmagin, R. M. Kolbas, H. C. Casey, Jr., B. P. Keller, U. K. Mishra, and S. P. DenBaars, “Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements”, Appl. Phys. Lett., 77, 2572, September, 1997
[8] G. Yu, G. Wang, H. Ishikawa, M. Umeno, T. Soga, T. Egawa, J. Watanabe, and T. Jimbo, “Optical properties of wurzite structure GaN on sapphire around fundamental absorption edge (0.78 - 4.77 eV) by spectroscopic ellipsometry and the optical transmission method”, Appl. Phys. Lett., 70, 3209-3211, April, 1997
[9] N. M. Ahmed, Z. Sauli, U. Hashim, and Y. Al-Douri, “Investigation of absorption coefficient, refractive index, energy band gap, and film thickness for 〖Al〗_0.11 〖Ga〗_0.89 N, 〖Al〗_0.03 〖Ga〗_0.97 N, and GaN by optical transmission method”, Int. J. Nanoelectronics and Materials, 2, 189-195, 2009
[10] O. K. Jani, “Development of wide-band gap InGaN solar cells for high-efficiency photovoltaics”, Georgia Institute of Technology, phD, August, 2008
[11] M Drechsler, D. M. Hoffmann, B. K. Meyer, T. Detchprohm, H. Amano, and I. Akasaki, “Determination of conduction band electron effective mass in hexagonal GaN”, Jpn. J. Appl. Phys., Vol. 34, L 1187-L 1179, 1995
[12] T. T. Mnatsakanov, M. E. Levinshtein, L. I. Pomortseva, S. N. Yurkov, G. S. Simin, M. A. Khan, “Carrier mobility model for GaN”, Solid-State Electronics, 47, 111-115, June, 2002
[13] M. A. Khan, G. Simin, S. G. Pytel, A. Monti, E. Santi, and J. L. Hudgin, “New developments in gallium nitride and the impact on power electronics”, Power Electronics Specialists Conference, p. 15-26, Recife, Brazil, June, 2005
[14] S. C. Jain, M. Wilander, J. Narayan, and R. Van Overstraeten, “III-nitrides: Growth, characterization, and properties”, J. Appl. Phys., Vol 87, No. 3, February, 2000
[15] J. Wu, W. Walukiewicz, K. M. Yu, W. Shan, J. W. Ager III, E. E. Haller, Hai Lu, William J. Schaff, W. K. Metzger, and Sarah Kurtz, “Superior radiation resistance of 〖In〗_(1-x) 〖Ga〗_x N alloys: Full-solar-spectrum photovoltaic material system”, J. of Appl. Phys., Vol. 94, No. 10
[16] A. Yamamoto, Md. R. Islam, Ting-Ting Kang, and A. Hashimoto, “Recent advances in InN-based solar cells: status and challenges in InGaN and InAlN solar cells”, Phys. Status Solidi C, 7, No.5, 1309-1316, 2010
[17] S. Yu Kurin, V. D. Doronin, S. A. Ivanov, H. I. Helava, B. P. Papchenko, A. A. Antipov, A. S. Usikov, and Yu N. Makarov, “Conversion efficiency in a solar splitting system”, J. of Phys.: Conference Series, 572, 2014
[18] C. Yang, X. Wang, H. Xiao, J. Ran, C. Wang, G. Hu, X. Wang, X. Zhang, Jianping Lee, and Jinmin Lee, “Photovoltaic effects in InGaN structures with p-n junctions”, Phys. Stat. Sol. (a), 204, No.12, 4288-4291, October, 2007
[19] O. Jani, H. Yu, E. Trybus, B. Jampana, I. Ferguson, A. Doolittle, and C. Honsberg, “Effect of phase separation on performance of III-V nitride solar cells”, 22nd European Photovoltaic Solar Energy Conf., 64-67, Milan, Italy, September, 2007
[20] P. Misra, C.Boney, N. Medelci, D. Starikov, A. Freundlich, and A. Bensaoula,“Fabrication and characterization of 2.3eV InGaN photovoltaic devices“, 33rd IEEE Photovoltaic Specialists Conf., San Diego, USA, May, 2008
[21] A. Yamamoto, K. Sugita, M. Horie, Y. Ohmura, Md. R. Islam, and A. Hashimoto, “Mg-doping and N^+-P junction formation in MOVPE- grown 〖In〗_x 〖Ga〗_(1-x) N (x~0.4)”, 33rd IEEE Photovoltaic Specialists Conf., San Diego, USA, May, 2008
[22] X. M. Cai, S. W. Zeng, and B. P. Zhang, “Fabrication and characterization of InGaN p-i-n homojunction solar cell”, Appl. Phys. Lett., 95, No. 17, 173504, October, 2009
[23] X. M. Cai, S. W. Zeng, and B. P. Zhang, “Favorable photovoltaic effects in InGaNpinhomojunction solar cell”, Electronics Letters, Vol. 45, No. 24, 1266-1267, November, 2009
[24] B. R. Jampana, A. G. Melton, M. Jamil, N. N. Faleev, R. L. Opila, I. T. Ferguson, and C. B. Honsberg, “Design and realization of wide-band-gap (~2.67eV) InGaN p-n junction solar cell”, IEEE Electron Device Letters, Vol. 31, No. 1, 32-34, January, 2010
[25] C. Boney, I. Hernandez, R. Pillai, D. Starikov, A. Bensaoula, M. Henini, M. Syperek, J. Misiewicz, and R. Kudrawiec, “Growth and characterization of InGaN for photovoltaic devices”, Phys. Status Solidi C, Vol. 8, No. 7, 2466-2668, July, 2011
[26] L. Sang, M. Liao, Y. Koide, and M. Sumiya, “Temperature and light intensity dependence off photocurrent transport mechanisms in InGaN p-i-n homojunction solar cells”, Japanese J. Appl. Phys., 52, 08JF04, 2013
[27] O. Jani, I. Ferguson, C. Honsberg, and S. Kurtz, “Design and characterization of GaN/InGaN solar cells”, Appl. Phys. Lett., 91, 132117, September, 2007
[28] C. J. Neufeld, N. G. Toledo, S. C. Cruz, M. Iza, S. P. DenBaars, and U. K. Mishra, “High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap”,Appl. Phys. Lett., 93, No. 14, 143502, October, 2008
[29] R. Dahal, B. Pantha, J. Li, J. Y. Ling, and H. X. Jiang, “InGaN/GaN multiple quantum well solar cells with long operating wavelengths”, Appl. Phys. Lett., 94, 063505, February, 2009
[30] Ming-JerJeng, Yu-Lin Lee, and Liann-Be Chang, “Temperature dependences of 〖In〗_x 〖Ga〗_(1-x) N multiple quantum well solar cells”, J. Phys. D: Appl. Phys., 42, 105101, 2009
[31] K. Y. Lai, G. J. Lin, Y. L. Lai, Y. F. Chen, and J. H. He, “Effect of indium fluctuation on the photovoltaic characteristics of InGaN/GaN multiple quantum well solar cells”, Appl. Phys. Lett., 96, No. 8, 081103, February, 2010
[32] Y. Kuwahara, T. Fujii, T. Sugiyama, D. Iida, Y. Isobe, Y. Fujiyama, Y. Morita, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano, “GaInN-based solar cells using strained-layer GaInN/GaInNsuperlattice active layer on a freestanding GaN substrate”, Appl. Phys. Express, Vol.4, No. 2, 021001, January, 2011
[33] T. Fujii, Y. Kuwahara, D. Iida, Y. Fujiyama, Y. Morita, T. Sugiyama, Y. Isobe, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano, “GaInN-based solar cells using GaInN/GaInNsuperlattices”, Phys. Status Solidi C, 8, No. 7-8, 2463-2665, June, 2011
[34] H. C. Lee, Y. K. Su, W. H. Lan, J. C. Lin, K. C. Huang, W. J. Lin, Y. C. Cheng, and Y. H. Yeh, “Study of electrical characteristics of GaN-based photovoltaics with graded 〖In〗_x 〖Ga〗_(1-x) N absorption layer”, IEEE Photonics Tech. Lett., Vol 23, No. 6, March, 2011
[35] J. J. Wierer, Jr., D. D. Koleske, and S. R. Lee, “Influence of barrier thickness on the performance of InGaN/GaN multiple quantum well solar cells”, Appl. Phys. Lett., 100, 111119, March, 2012
[36] N. G. Young, R. M. Farrell, Y. L. Hu, Y. Terao, M. Iza, S. Keller, S. P. DenBaars, S. Nakamura, and J. S. Speck, “High performance thin quantum barrier InGaN/GaN solar cell on sapphire and bulk (0001) GaN substrates”,Appl. Phys. Lett., 103, 173903, 2013
[37] N. G. Young, E. E. Perl, R. M. Farrell, M. Iza, S. Keller, J. E.Bowers,S. Nakamura, S. P. DenBaars, and J. S. Speck, “High-performance broadband optical coatings on InGaN/GaN solar cells for multijunction device integration”, Appl. Phys. Lett., 104, 163902, April, 2014
[38] H. Çakmak, E. Arslan, M. Rudziński, P. Demirel, H. E. Unalan, W. Strupiński, R. Turan, M. Öztürk, and E. Özbay, “Indium rich InGaN solar cells grown by MOCVD”, J. Mater. Sci.: Mater. Electron., Vol. 25, No. 8, 3652-3658, June, 2014
[39] S. V. Felip, M. Mukhtarova, L. Grenet, C. Bougerol, C. Durand, J. Eymery, E. Monroy, “Improved conversion efficiency of as-grown InGaN/GaN quantum-well solar cells for hybrid integration”,Appl. Phys. Exp., Vol. 7, No. 3, November, 2014
[40] C. A. M. Fabien, B. P. Cunning, J. J. Merola, E. A. Clinton, and W. A. Doolittle, “Large-Area III-Nitride Double-Heterojunction Solar Cells with RecordHigh In-content InGaN Absorbing Layers”, 42nd Photovoltaic Specialists Conf., 1-3, New Orleans, LA, June, 2015
[41] D. König, K. Casalenuovo, Y. Takeda, G. Conibeer, J. F. Guillemoles, R. Patterson, L. M. Huang, and M. A. Green, “Hot carrier solar cells: Principles, materials and design”, Physica E, 42, 2862-2866, December 2009
[42] K. Y. Lai, G. J. Lin, Y. L. Lai, Y. F. Chen, and J. H. He, “Origin of hot carriers in InGaN-based quantum-well solar cells”, IEEE Electron Device Letters, Vol. 32, No. 2, February, 2011
[43] M. A. Green, “Third generation concepts for photovoltaics”, 3rd world conference on photovoltaic energy conversion, 50-54, Osaka, Japan, May, 2003
[44] Tongtong Zhu and Rachel A. Oliver, “Unintentional doping in GaN”, Phys. Chem. Chem. Phys., 14, 9558-9573, May, 2012
[45] HadisMorkoç, Handbook of Nitride Semiconductors and Devices, WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, Germany, 2008
[46] I-hsiu Ho and G. B. Stringfellow, “Solid phase immiscibility in GaInN”, Appl. Phys. Lett., Vol. 69, No. 18, October, 1996
[47] B. N. Pantha, A. Sedhain, J. Li, J. Y. Lin, and H. X. Jiang, “Electrical and optical properties of p-type InGaN”, Appl. Phys. Lett., 95, 261904, December, 2009
[48] Y. K. Kuo, J. Y. Chang, and Y. H. Shih, “Numerical study of the effects of hetero-interfaces, polarization charges, and step-graded interlayers on the photovoltaic properties of (0001) face GaN/InGaN p-i-n solar cells”, IEEE J. Quantum Electron., Vol. 48, No. 3, 367-374, March, 2012
[49] H. W. Wang, Peichen Yu, Y. R. Wu, H. C. Kuo, Edward Y. Chang, and S. H. Lin, “Projected Efficiency of Polarization-Matched p-〖In〗_x 〖Ga〗_(1-x) N/i-〖In〗_y 〖Ga〗_(1-y) N/n-GaN Double Heterojunction Solar cells”, IEEE J. Photovoltaics, Vol. 3, No.3, July, 2013
[50] O. Ambacher, J. Smart, J. R. Shealy, N. G. Weimann, K. Chu, M. Murphy, W. J. Schaff, L. F. Eastman, W. Rieger, and J. Hilsenbeck, “Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and G-face AlGaN/GaNheterostructures”, J. Appl. Phys., Vol. 85, No.6, 3222-3233, March 1999
[51] I. M. Dharmadasa, “Third gerneration multi-layer tandem solar cells for achieving high conversion efficiencies”, Solar Energy Materials & Solar Cells, 85, 293-300, July, 2004
[52] KK PhD: Mass flow controllers and finding one’s path. September 2013
From:http://laserboyfriend.blogspot.tw/2013/09/mass-flow-controllers-and-finding-ones.html
[53] Axitron: How MOCVD works.
From:http://www.aixtron.com/fileadmin/documents/Brochures/How_MOCVD_works.pdf
[54] Shaoguang Dong, Kanghua Chen, Guojie Chen and Xin Chen,Solar Cells with InGaN/GaN and InP/InGaAsP and InGaP/GaAs Multiple Quantum Wells, Solar Cells-New Approaches and Reviews, Prof. Leonid A. Kosyachenko (Ed.), InTech
[55] “Solar Cell Spectral Response Measurement System QE-R Operation Manual”, Enli Technology Co., Ltd
[56]D. Holec, P. M. F. J. Costa, M. J. Kappers, and C. J. Humphreys,“Critical thickness calculations for InGaN/GaN”, J. Cryst. Growth,303, 314 (2007)
[57]Carl J Neufeld, Samantha C Cruz, Robert M. Farrell, Michael Iza, Jordan R. Lang, StaciaKeller, Shuji Nakamura, Steven P. DenBaars, James S. Speck, and Umesh K. Mishra, “Effect of doping and polarization on carrier collection in InGaN quantum well solar cells”, Appl. Phys. Lett., 98, 243507, 2011
[58] Yuh-Renn Wu, From: http://yrwu-wk.ee.ntu.edu.tw/
[59] G. F. Brown, J. W. Ager III, W. Walukiewicz, J.Wu, “Finite element simulations of compositionally graded InGaN solar cells”, Solar Energy Materials & Solar Cells, 94, 478-483, 2010
[60] Z. Q. Li, M. Lestradet, Y. G. Xiao, and S. Li, “Effects of polarization charge on the photovoltaic properties of InGaN solar cells”, Phys. Status Solidi A, 208, No 4, 928-931, 2011
[61] Jih-Yuan Chang, Bo-Ting Liou, Han-Wei Lin, Ya-Hsuan Shih, Shu-Hsuan Chang, and Yen-KuangKuo, “Numerical investigation on the enhanced carriercollection efficiency of Ga-face GaN/InGaN p-i-nsolar cells with polarization compensation interlayers”, Optics Letters, Vol. 36, No. 17, 2011
[62] J. Y. Chang and Y. K. Kuo, “Simulation of N-face InGaN-based p-i-n solar cells”, J. Appl. Phys., Vol. 112, pp. 033109-1-033109-5, 2012
[63] Z. Q. Li, M. Lestradet, Y. G. Xiao, and S. Li, “Effect of polarization charge on the photovoltaic properties of InGaN solar cells”, Phys. Status Solidi (a), vol. 208
[64] Hsun-Wen Wang, Peichen Yu, Yuh-Renn Wu, Hao-Chung Kuo, Edward Yi Chang, and Shiuan-Huei Lin, “Projected Efficiency of Polarization-Matched p-〖In〗_x 〖Ga〗_(1-x) N/i-〖In〗_y 〖Ga〗_(1-y) N/n-GaN Double Heterojunction Solar Cell”, IEEE Electron Device Society, Vol. 3, Issue 3, 2013 |