穩健且具高抗損率的迴歸估計

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許嘉仁(Jian-Run Hsu) 查詢紙本館藏

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統計研究所

論文名稱

穩健且具高抗損率的迴歸估計

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摘要(中)

在元件之直流特性方面，1.0 mm ’ 50 mm之元件，其汲極飽和電流為215 mA/mm，夾止電壓為 -1.9 V；元件最大轉移電導gm為152 mS/mm。在高頻特性方面，元件偏壓在VDS = 2.0 V，VGS = 0 V時，量測求得電流增益截止頻率(ft)為8 GHz，功率增益截止頻率(fmax)為25 GHz。
另外，為了改善元件之崩潰特性與鈍化層的處理，針對表面植入氧之元件進行研究。經由實驗證明，氧的植入確實能有效改善元件之崩潰特性，更可以省略表面鈍化層的製程，但只對於元件之直流和高頻特性帶來了少許的傷害。

關鍵字(中)

★ 離子佈植
★ 砷化鎵金屬半導體場效電晶體

關鍵字(英)

★ Ion-implantation
★ MESFET

論文目次

目錄
第一章緒論…………………………………………………………1
§1.1 無線通訊的發展………………………………………………1
§1.2 論文架構………………………………………………………4
第二章砷化鎵金屬半導體場效電晶體…………………………5
§2.1 砷化鎵場效電晶體……………………………………………5
§2.2 離子佈植砷化鎵場效電晶體…………………………………8
§2.2.1 離子佈植法………………………………………………8
§2.3.2 P型埋藏層………………………………………………13
第三章離子佈植後之最佳活化溫度與時間……………………15
§3.1 活化的概念和應用…………………………………………15
§3.2 霍耳效應量測………………………………………………18
§3.3 電容-電壓特性量測…………………………………………23
第四章離子佈植砷化鎵場效電晶體之製程……………………27
§4.1 離子佈植……………………………………………………29
§4.2 清洗晶片……………………………………………………30
§4.3 快速加熱處理………………………………………………30
§4.4 元件的隔離…………………………………………………31
§4.5 歐姆接觸電極製作…………………………………………32
§4.5.1 歐姆接觸之最佳退火溫度與時間………………………32
§4.5.2 歐姆接觸電極製程………………………………………35
§4.6 閘極掘入和閘極電極製作…………………………………36
§4.6.1 閘極掘入…………………………………………………37
§4.6.2 閘極電極製程……………………………………………38
§4.7 覆蓋鈍化層與製作介層洞…………………………………40
§4.8 金屬連線的製作……………………………………………41
第五章離子佈植砷化鎵場效電晶體之特性與討論……………43
§5.1 元件的直流特性與討論……………………………………43
§5.2 元件的高頻特性與討論……………………………………48
第六章特殊氧植入離子佈植砷化鎵場效電晶體之研究……54
§6.1 元件製成上的修正…………………………………………54
§6.2 元件特性上的改變…………………………………………55
§6.2.1 元件直流特性上的改變…………………………………55
§6.2.2 元件高頻特性上的改變…………………………………59
第七章結論………………………………………………………62
參考文獻……………………………………………………………64

參考文獻

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指導教授

鄭松壽(Sung-Shou Cheng)

審核日期

2002-1-15

推文