摘要(英) |
As the evolution of semiconductor process technology, the process variation will be more and more serious in device mismatch and parameter variation of components. The performance of many types of analog circuits, like ADC, filter, etc., relies on the implementation of accurate capacitor array ratios. But after the process variation, the capacitance ratio is the same as expected. How to achieve the exact capacitance ratio is a very important issues. Therefore, the approach of mismatch effects becomes a critical issue for better anticipated performance.
In this thesis simulated a method for improving mismatch of elements. In this method, we estimate capacitance placement by spatial correlation. Then simulated linear gradient、oxide gradient、CMP effect and temperature gradient. From the point of view of the correlation coefficient, Process Capability Index to assess the performance of the capacitors array. According to effect users want opposition to make effective placement, it will arrive to perfect capacitor array prevent of systematic variation. Finally, consider the systematic mismatch and random mismatch, we could get truly approaching effect, Through the process capability indicators to determine whether the placement has to meet the needs of users. |
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