四面體網格面重心向量開發及其在三維半導體元件模擬之應用

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姓名

簡楷哲(Kai-Che Chien) 查詢紙本館藏

畢業系所

電機工程學系

論文名稱

四面體網格面重心向量開發及其在三維半導體元件模擬之應用
(Finding internal vector from the barycenter of vector in tetrahedron for 3-D semiconductor device simulation)

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摘要(中)

在此篇論文中，為了減少製程上資源的浪費，我們主要使用C語言軟體模擬半導體元件特性，開發出三維重心版模組，以四面體網格當基本元素，模擬三維半導體元件，相較於以往二維重心版模組，三維模組更能應用於不規則接面處，增加網格模組的彈性空間；首先模擬簡單的四面體電阻與PN-Junction的特性曲線來驗證其程式架構，接著把四面體網格模組轉換至梯形網格模組，並將梯形元件延伸至圓柱體元件，分析圓弧面相較於直角網格的差異性，使網格系統能更精確的模擬半導體元件。

摘要(英)

In this thesis, in order to reduce the process cost, we use C language software to simulate characteristics of semiconductor device. We developed 3D barycenter module which is composed of tetrahedral mesh elements to simulate 3D semiconductor device. The 3D module is better than 2D module and it increases the flexibility to fit the environment. First of all, a simple tetrahedral resistor and PN junction will be simulated and compare to the theoretical for verification. Next, the tetrahedral module will be applied to trapezoidal module, and extended to cylindrical semiconductor device. The 3D module can help us improve the accuracy of semiconductor device.

關鍵字(中)

★ 四面體
★ 重心版

關鍵字(英)

★ tetrahedron
★ barycenter

論文目次

目錄
摘要 i
Abstract ii
目錄 iii
圖目錄 iv
表目錄 vi
第一章簡介 1
第二章三維網格模組開發 3
2-1. 基本網格結構介紹 3
2-2. 重心和外心在四面體網格的分析 7
2-3. 內部電場於四面體網格分析 10
第三章四面體半導體模組驗證 18
3-1. 四面體等效電路模型電場驗證 18
3-2. 四面體等效電路模型電子流密度驗證 21
3-3. 四面體等效電路模型電洞流密度驗證 25
第四章四面體網格於三維半導體元件模擬 29
4-1. 四面體網格模組電阻模擬與分析 29
4-2. 四面體延伸至六面體網格模組電阻模擬與分析 31
4-3. P-N二極體接面特性模擬與驗證 35
4-4. 圓柱坐標系模組的開發與驗證 38
第五章結論 43
參考文獻 44

參考文獻

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指導教授

蔡曜聰(Yao-Tsung Tsai)

審核日期

2017-6-29

推文