氨電漿處理對高介電常數氧化鋯薄膜電容器特性研究

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劉嘉吉(Chia-Chi Liu) 查詢紙本館藏

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機械工程學系在職專班

論文名稱

氨電漿處理對高介電常數氧化鋯薄膜電容器特性研究
(Study on characteristics of high dielectric constant Zirconia thin film capacitors treatment with Ammonia plasma)

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摘要(中)

本論文主旨在研究以具有高介電常數的氧化鋯(ZrO2)薄膜，作為金氧半電容器(MOSC)之介電層，以取代傳統使用的二氧化矽(SiO2)，並藉由金氧半電容之電性及材料分析結果，將氧化鋯薄膜應用於製作鍺鰭式電晶體元件(Ge FinFET)。利用「加熱式原子層沉積系統沉積含有高介電常數及寬能隙的氧化鋯(ZrO2)薄膜應用於製作金氧半電容器(MOSC)及鍺鰭式電晶體元件(Ge FinFET)」，並探討其薄膜電性及相關材料特性。
　　實驗試片之特性量測與分析則包含：
(1)利用電容-電壓(C-V)與電流-電壓(I-V)特性曲線，萃取薄膜的界面缺陷密度與等效氧化厚度(EOT)，並探討MOSC元件的漏電流與散射效應。
(2)利用TEM觀察介電層的厚度及薄膜與基板之間的介面品質。
(3)利用XPS進行表面化學態分析，以了解氧化鍺(GeOx)介面層在氧化鋯介電層與鍺基板之組成關係。
在本研究中，以加熱式原子層沉積系統沉積氧化鋯薄膜，並探討沉積薄膜時表面處理的影響，其鍺鰭式電晶體元件的次臨界擺幅與導通電流比雖仍無法與文獻之最佳結果比擬，但在金氧半元件的等效氧化厚度、界面缺陷密度、漏電流與射散特性方面，則有較佳的表現；故未來研究規劃將持續針對薄膜製程進行改善，並積極開發新的高介電材料。

摘要(英)

The purposes of this thesis is to research the physical and electrical characteristics of MOS-Capacitor on germanium (Ge) with high-κ gate oxide (ZrO2). Moreover, the Ge FinFET are also attempting to fabricate by ZrO2 MOS-Capacitor results. The Rare-earth metal-oxide (ZrO2), that has high dielectric constant and wide bandgap, was deposited by thermal atomic layer deposition. The ZrO2 MOS-Capacitor and Ge GAA-FETs are also conferred by electro property and similar material property.
ZrO2 samples were analyzed and discussed by the following measurements:
(1)C-V and I-V curves: extract interface trap density, equivalent oxide thickness, leakage current, and dispersion effect.
(2)TEM: measure film thickness and film/substrate interface quality.
(3)XPS: this work explores how using the GeOx as the interlayer was the material chemical property was formed between ZrO2 and Ge substrate.
In this study, a ZrO2 film was deposited by the thermal atomic layer deposition system and the effect of surface treatment on the deposited film was investigated Though the sub-threshold swing (S.S.) and on-off current ratio (Ion/Ioff) of ZrO2 Ge FinFET are still not well enough than reported papers, thinner equivalent oxide thickness, low leakage current, low interface trap density and low dispersion effect are obtained. Follow-up research will be continued to further improve the characteristics of ZrO2 gate dielectric on Ge FinFET.

關鍵字(中)

★ 高介電常數
★ 加熱式原子層沉積
★ 等效氧化厚度
★ 閘極介電層
★ 氧化鋯

關鍵字(英)

★ High-κ
★ Atomic layer deposition
★ Equivalent Oxide Thickness(EOT)
★ Gate dielectric
★ Ziconium oxide

論文目次

摘要 ii
ABSTRACT iii
誌謝 iv
目錄 v
表目錄 vii
圖目錄 viii
1. 緒論 1
1.1 研究動機與目的 1
1.2 論文架構 3
2. 理論架構 7
2.1 金氧半電容之簡介 7
2.2 金氧半電容之操作原理 8
2.3 金氧半電容之氧化層缺陷探討 13
2.3.1 介面捕獲電荷(Interface Trapped Charge, Qit) 13
2.3.2 固定氧化層電荷(Fixed Oxide Charge, Qf) 14
2.3.3 移動性離子電荷(Mobile Ion Charge, Qm) 14
2.3.4 氧化層捕獲電荷(Oxide Trapped Charge, Qot) 15
2.4 原子層沉積原理 15
2.4.1 原子層沉積 15
2.4.2 原子層沉積理論與流程 16
2.4.3 ALD 成長Al2O3 薄膜 17
2.4.4 薄膜沉積 19
2.5 濺鍍原理 20
2.5.1 濺鍍 20
2.5.2 濺鍍理論 25
3.加熱式原子層沉積系統應用於氧化鋯之沉積與元件之製作 27
3.1 實驗製程及步驟 27
3.2 晶片清洗 28
3.3 氧化鍺(GeO2)薄膜之沉積 28
3.4 氧化鋯(ZrO2)薄膜之沉積 29
3.5 氧化鋯薄膜的熱退火 29
3.6 閘極金屬電極與背面金屬電極的濺鍍 29
3.7 TEM 量測 29
3.8 化學能譜分析儀(ESCA)量測 32
4. 結果與討論 35
4.1 氧化鍺介面層對於電容器元件之電容-電壓之探討 35
4.2 表面處理對於氧化鋯電容器元件之電性探討 38
4.3 NH3/H2 RPT 表面處理次數對MOSC 元件之電性討論 41
4.4 氧化鋯電容器之TEM 與XPS 分析 44
4.5 鍺鰭式電晶體元件製作與電性分析 47
5. 結論與未來展望 50
5.1 結論 50
5.2 未來展望 51
參考文獻 52

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指導教授

傅尹坤(Yiin-Kuen Fuh)

審核日期

2017-7-18

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