磁控濺鍍法製作高品質多晶砷化鎵薄膜 之研究

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姓名

石邱毅(Chiu-Yi Shih) 查詢紙本館藏

畢業系所

光電科學與工程學系

論文名稱

磁控濺鍍法製作高品質多晶砷化鎵薄膜之研究
(Fabrication of High Quality Polycrystalline Gallium Arsenide Thin Films by Magnetron Sputtering Deposition)

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摘要(中)

本研究使用磁控濺鍍法在鍺矽基板上生長高品質多晶砷化鎵薄膜，藉著磁控濺鍍沉積大面積製程，且在磊晶過程中不會使用有毒氣體等優勢，但較難磊晶成長，所以著重於薄膜生長之研究，若能成功於鍺矽基板生長高品質砷化鎵薄膜，就能取代機械強度較弱與成本較高的鍺晶圓。我們藉由基板溫度、濺鍍功率以及氫氣流量製程參數的調變，成功於鍺矽基板生長高品質多晶砷化鎵薄膜，由於氫能與砷化鎵薄膜鍵結形成(H-Ga, H-As)而減少缺陷結構，最後藉由熱退火製程使晶格重新排列，讓薄膜結構更為完整，且降低了表面粗糙度。本實驗使用Raman(拉曼光譜)、XRD(X射線繞射)、EBSD(電子背向散射繞射)、TEM(穿透式電子顯微鏡)、AFM(原子力顯微鏡)進行量測分析與討論。

摘要(英)

In this study, high-quality polycrystalline gallium arsenide thin films have been grown on the germanium silicon substrates by using a magnetic sputtering method. The advantages of the sputtering method were it is a low-cost and secure process method to replace the expensive and fragile germanium wafer by the germanium silicon one. The high-quality polycrystalline gallium arsenide films can be grown on the germanium silicon substrates by odjusting the substrate temperature, sputtering power, and hydrogen flow during the process. After the process, Raman spectrometer, XRD, EBSD, TEM and AFM were used to analyze the properties of crystallization.

關鍵字(中)

★ 磁控濺鍍
★ 砷化鎵薄膜

關鍵字(英)

★ Magnetron Sputtering Deposition
★ Gallium Arsenide Thin Films

論文目次

目錄
摘要 I
Abstract VI
致謝 VII
目錄 VIII
圖目錄 XI
表目錄 XVI
第一章緒論 1
1-1前言 1
1-2研究動機與目的 4
1-3論文架構 6
第二章文獻回顧 7
2-1砷化鎵薄膜材料特性與應用 7
2-2砷化鎵薄膜之生長機制 9
2-3砷化鎵薄膜之製程方法比較 10
2-4濺鍍法製作砷化鎵薄膜之研究文獻 11
2-5相關砷化鎵磊晶薄膜之研究文獻 12
第三章實驗流程與實驗設備 14
3-1 實驗流程 14
3-2 濺鍍設備 (RF Sputtering) 15
3-3 熱退火製程 (Thermal annealing) 17
3-4 X射線繞射儀 (X-Ray Diffraction, XRD) 17
3-5 拉曼光譜儀 (Raman scattering) 19
3-6 電子背向散射繞射 (Electron backscatter diffraction, EBSD) 20
3-7 原子力顯微鏡 (Atomic-force microscopy, AFM) 22
第四章砷化鎵薄膜濺鍍磊晶與分析 24
4-1 改變基板對砷化鎵薄膜之影響 24
4-1-1 Raman 量測結果分析 25
4-1-2 XRD 量測結果分析 27
4-1-3 EBSD 量測結果分析 29
4-1-4 TEM 量測結果分析 32
4-1-5 AFM 量測結果分析 33
4-2 改變基板溫度對砷化鎵薄膜之影響 37
4-2-1 Raman 量測結果分析 37
4-2-2 XRD 量測結果分析 39
4-2-3 AFM 量測結果分析 42
4-3 改變濺鍍功率對砷化鎵薄膜之影響 45
4-3-1 Raman 量測結果分析 45
4-3-2 XRD 量測結果分析 47
4-3-3 EBSD 量測結果分析 49
4-3-4 AFM 量測結果分析 51
4-4改變氫氣流量對砷化鎵薄膜之影響 55
4-4-1 Raman 量測結果分析 55
4-4-2 XRD 量測結果分析 58
4-4-3 EBSD 量測結果分析 60
4-4-4 AFM 量測結果分析 63
第五章熱退火優化砷化鎵薄膜 67
5-1 熱退火實驗流程 67
5-2 不同溫度熱退火對砷化鎵(不通氫)薄膜影響 68
5-2-1 OM 量測結果分析 68
5-2-2 SEM 量測結果分析 69
5-2-3 Raman 量測結果分析 70
5-2-4 XRD 量測結果分析 72
5-2-5 AFM 量測結果分析 74
5-3 不同溫度熱退火對砷化鎵(通氫)薄膜影響 78
5-3-1 OM 量測結果分析 78
5-3-2 SEM 量測結果分析 79
5-3-3 Raman 量測結果分析 81
5-3-4 XRD 量測結果分析 83
5-3-5 EBSD 量測結果分析 85
5-3-6 AFM 量測結果分析 87
第六章結論與未來工作 91
6-1 結論 91
6-2 未來工作 92
參考文獻 94

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指導教授

陳昇暉、曹昭陽(Sheng-Hui Chen Chao-Yang Tsao)

審核日期

2017-8-22

推文