新型氮化鎵蕭特基二極體之製作與特性分析

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姓名

陳英杰(Ying-chien Chen) 查詢紙本館藏

畢業系所

物理學系

論文名稱

新型氮化鎵蕭特基二極體之製作與特性分析
(Fabrication and analysis of a novel GaN Schottky Diodes)

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摘要(中)

本研究之目標乃是利用AlGaN/GaN 異質結構製作高崩潰電壓與高順向電流之蕭特基二極體，為了改善傳統蕭特基二極體具有大約1 V 開啟電壓（Von）以及過大之漏電流問題，本論文提出一個新穎的整流二極體結構，即P 型氮化鎵-場效蕭特基二極體（P-FESBD），此乃結合雙閘極金屬之蕭特基二極體與pn 接面二極體的設計概念，結構之特點乃是在閘極區域嵌入歐姆金屬，以降低元件的開啟電壓，而p-n 空乏區的作用則是在不需要recessed製程的情況下便達到常關型（normally-off）的操作特性同時降低反向漏電流，此外，由於P 型氮化鎵閘極的表面為歐姆接觸，因此當元件操作於順向偏壓時，P 型氮化鎵閘極會提供電洞注入通道降低開啟後電阻（Ron），完成後之元件獲得0.5 V 的低開啟電壓，開啟後電阻與崩潰電壓（VB）則分別為24 mΩ-cm2 與22 V，經由SIMS 與緩衝層電流量測的分析後發現鎂（Mg）的擴散以及緩衝層材料的阻值皆是影響P-FESBD 元件特性的關鍵因素。另一方面為了改善傳統大面積蕭特基二極體因材料缺陷導致良率偏低的問題，本研究利用打線（wire bonding）並聯的方式製作陣列式蕭特基二極體，1.5 V 時可得順向電流432 mA，同時崩潰電壓仍維持在160 V。

摘要(英)

In this thesis a new AlGaN/GaN high electron mobility transistor basedrectifier, i.e. P-field effect Schottky barrier diode (P-FESBD), is proposed andfabricated. It consists of a p-n diode and a Schottky diode connected in parallel.With the additional p-type GaN gate, the rectifier is expected to operate in the normally-off mode with low reverse leakage current and low on-resistance. The
turn-on voltage, on-state resistance and breakdown voltage of the one finger rectifier with 500×35 μm2 gate area is 0.5 V, 24 mΩ-cm2 and 22 V, respectively. According to secondary ion mass spectroscopy measurement and electrical
characterization, diffusion of the p-type dopant, Mg, and leakage current of the GaN buffer layer are concluded to be the main reasons for poor breakdown voltage.
Furthermore, in order to increase the forward current and yield of GaN Schottky diodes with multi-finger or large gate area, tested Schottky diodes are connected in parallel by wire bonding. Forward current of 432 mA at 1.5 V is achieved on a six-diode device with 160 V breakdown voltage.

關鍵字(中)

★ 氮化鎵
★ 蕭特基二極體

關鍵字(英)

★ Schottky diode
★ GaN

論文目次

目錄
中文摘要 ................................................ i
英文摘要 ............................................... ii
誌謝 ...................................................iii
目錄 ....................................................iv
圖目錄 ................................................. vi
表目錄 ................................................. ix
第一章緒論 ............................................. 1
1.1 前言 ................................................ 1
1.2 氮化鎵蕭特基二極體之發展概況 ........................ 5
1.3 研究動機 ............................................12
第二章 P-GaN/AlGaN/GaN 蕭特基二極體的元件製作與特性分析 18
2.1 元件結構與製程步驟 ................................. 18
2.2 元件的電流-電壓特性與分析 .......................... 27
2.3 本章結論 ............................................38
第三章雙重蕭特基金屬之整流二極體的元件製作與特性分析 ...39
3.1 前言 ................................................39
3.2 FESBD 與Recessed-gate FESBD 的元件結構及製程步驟 ... 40
3.3 FESBD 的元件特性與分析 ..............................43
3.4 Recessed-gate FESBD 的元件特性與分析 ................45
3.5 本章結論 ........................................... 49
第四章高順向電流蕭特基二極體之元件分析 ................ 50
4.1 前言 ................................................50
4.2 陣列式AlGaN/GaN 蕭特基二極體的元件製作與特性分析 ... 52
4.3 元件串聯阻值分析 ....................................60
4.4 不同電極窗口設計之元件特性分析 ..................... 68
4.5 本章結論 ........................................... 71
第五章結論 ............................................ 72
參考文獻 ................................................73

參考文獻

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指導教授

綦振瀛、粘正勳
(Jen-inn Chyi、Cheng-Hsun Nien)

審核日期

2009-1-19

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