摘要(英) |
In recent years, III-nitride compounds exhibit excellent properties in wide applications of light-emitting diodes, displays, backlight modules, medical components, etc. Understanding the crystal properties of InGaN quantum wells is the key step to further improve the performances of nitride-based emitters.
In this research, we studied nanostructured semipolar {10-11} InGaN/GaN multiple quantum wells (MQW) using temperature-dependent, power-dependent and time-resolve photoluminescence (PL) spectra. The semipolar MQW were grown on (100) Si substrates by metal-organic chemical vapor deposition(MOCVD). To relieve the huge lattice strain between Si and GaN and to attain the semipolar crystal plane, ZnO nanorods were employed as the buffer layer.
From the results of temperature and power-dependent PL studies, the semipolar MQW display clear S-shape spectra and varied quantum-confined Stark effect (QCSE), indicating a quantum-dot-like structure due to indium segregation. The internal quantum efficiency is estimated to be 66%. From time-resolve PL, the carrier lifetime in the semipolar MQW is around 0.5 ns, much shorter than that (3.7 ns) of the conventional planar polar MQW. The result is attributed to the alleviated strain brought by the ZnO nanorods, as well as the mitigated QCSE. |
參考文獻 |
[1]網路資料 : 維基百科,發光二極體平衡態示意圖,取自https://zh.wikipedia.org/wiki/File:Pn-junction-equilibrium.png#filehistory
[2] Y. Koide, N. Itoh, K. Itoh, N. Sawaki, I. Akasaki. Effect of AlN Buffer Layer on AlGaN/α-Al2O3 Heteroepitaxial Growth by Metalorganic Vapor Phase Epitaxy. Jpn. J. Appl. Phys. 27 1156_(1988)
[3] I. Akasaki, H. Amano, K. Hiramatsu, and N. Sawaki. Hight efficiency blue LED utilizing GaN film with AlN buffer layer grown by MOVPE. Inst. Phys. Conf. Ser., 91, 633-636 (1988)
[4]網路資料:維基百科,纖鋅礦結構示意圖,取自http://www.wikiwand.com/zh-tw/%E6%B0%A7%E5%8C%96%E9%8B%85
[5]網路資料:維基百科,閃鋅礦結構示意圖,取自http://www.wikiwand.com/zh-tw/%E6%B0%A7%E5%8C%96%E9%8B%85
[6] E. Kuokstis, C. Q. et al. Polarization effects in photoluminescence of - and -plane GaN/AlGaN multiple quantum wells. Appl. Phys. Lett. 81, 4130 (2002)
[7]網路資料:材料世界網,不同維度奈米尺寸的吸收光譜,取自http://www.materialsnet.com.tw/DocView.aspx?id=8247
[8] Jasprit Singh. Physics of semiconductors and their heterostructures. Singapore : McGraw-Hill. 1993 .
[9] Fabio Bernardini , Vincenzo Fiorentini, David Vanderbilt. Spontaneous polarization and piezoelectric constants of III-V nitrides. Phys. Rev. B 56, R10024(R)(1997)
[10] Fabio Bernardini1 , Vincenzo Fiorentini. Spontaneous versus piezoelectric polarization in III-V nitrides:conceptual aspects and practical consequences. Phys. Stat. sol. (b)216, 391 (1999)
[11]網路資料:https://theness.com,不同情況下壓電效應示意圖,取自https://theness.com/neurologicablog/index.php/piezoelectric-roads/
[12]日本上智大學下村研究室,量子史塔克效應對載子分布的影響,http://pweb.cc.sophia.ac.jp/shimolab/qcse.html
[13]網路資料:www.ledinside.com,螢光產生示意圖,取自https://www.ledinside.com.tw/knowledge/20120525-21281.html
[14]網路資料:www.olympus-lifescience.com,賈布朗斯基電子能態轉換圖,取自https://www.olympus-lifescience.com/en/microscope-resource /primer /java /jablonski/jabintro/
[15] J. Mickevi?ius, M. S. et al.Time-resolved experimental study of carrier lifetime in GaN epilayers. Appl. Phys. Lett. 87, 241918 (2005);
[16] Lai Wang*, Yuchen Xing, Zhibiao Hao, and Yi Luo. Study on carrier lifetimes in InGaN multi-quantum well with different barriers by time-resolved photoluminescence. Phys. Status Solidi B 252, No. 5, 956–960 (2015)
[17] Lai Wang*, Yuchen Xing, Zhibiao Hao, and Yi Luo. Study on carrier lifetimes in InGaN multi-quantum well with different barriers by time-resolved photoluminescence. Phys. Status Solidi B 252, No. 5, 956–960 (2015)
[18]網路資料:www.picoquant.com,單光子計數系統紀錄光子示意圖,取自https://www.picoquant.com/products/category/tcspc-and-time-tagging-modules/picoharp-300-stand-alone-tcspc-module-with-usb-interface#images
[19]網路資料: www.boselec.com,多循環累積光子訊號示意圖,取自https://www.boselec.com/product-category/photon-counting-applications-techniques/
[20] X. A. Cao, S. F. LeBoeuf, and L. B. RowlandC. H. Yan and H. Liu. Temperature-dependent emission intensity and energy shift in InGaN/GaN multiple-quantumwell light-emitting diodes. Appl. Phys. Lett. 82, 3614 (2003)
[21] Petr G. Eliseev, Piotr Perlin, Jinhyun Lee, and Marek Osi?ski. Blue temperature-induced shift and band-tail emission in InGaN-based light sources. Appl. Phys. Lett. 71, 569 (1997)
[22] Yong-Hoon Cho, G. H. Gainer, A. J. Fischer, and J. J. SongS. Keller, U. K. Mishra, and S. P. DenBaars. “S-shaped” temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells. Appl. Phys. Lett. 73, 1370 (1998)
[23] Yong-Hoon Cho, G. H. Gainer, A. J. Fischer, and J. J. SongS. Keller, U. K. Mishra, and S. P. DenBaars.“S-shaped” temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells.Appl. Phys. Lett. 73, 1370 (1998)
[24] Huining Wang,1 Ziwu Ji. et al. Influence of excitation power and temperature
on photoluminescence in InGaN/GaN multiple quantum wells. Optics Express Vol. 20, Issue 4, pp. 3932-3940 (2012)
[25] Young S. Park,1 Christopher C. S. et al. Reduced Stark shift in three-dimensionally confined GaN/AlGaN asymmetric multiquantum Disks. Optical Materials Express. Vol. 5, No. 4 (2015)
[26] K. Totsuka, M. A. I. Talukder, M. Matsumoto, and M. Tomita. Excitation-power-dependent spectral shift in photoluminescence in dye molecules in strongly scattering optical media. Phys. Rev. B 59, 50(1991)
[27] Ya-Ju Lee. et al. Study of the Excitation Power Dependent Internal Quantum Efficiency in InGaN/GaN LEDs Grown on Patterned Sapphire Substrate. IEEE Journal of Selected Topics in Quantum Electronics ( Volume: 15, Issue: 4, July-aug. 2009 ) |