博碩士論文 105323029 詳細資訊




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姓名 辜偉豪(Wei-Hao Ku)  查詢紙本館藏   畢業系所 機械工程學系
論文名稱 銅基金屬輔助蝕刻製作半導體奈米結構及光致發光效應
(Forming semiconductor nanostructures with photoluminescence by copper-based metal-assisted etching)
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摘要(中) 本研究是以金屬輔助蝕刻法將銅顆粒為催化劑及HF/H2O2為蝕刻液,在特定的蝕刻時間和電流密度下在各種環境(暗室、日光燈和UV燈)中蝕刻P型矽晶片,以討論其對矽納米結構和光致發光的影響。
我們發現在UV燈照射下深度的蝕刻速率非常慢,但是獲得了緻密的納米結構;此外,在暗室蝕刻和日光燈的照射下,MACE蝕刻存在光致發光現象。
摘要(英) This research focuses on the metal assistance chemical etching which the copper particles is as the catalyst and HF/H2O2 is the electrolyte. We etched a P-type wafer at various environment (darkroom, luminescence lamp, and UV lamp) at a specificial etching time and current density to discuss its influence on silicon nanostructure and photoluminescence.
We discovered the etching rate in depth is very slow under the UV lamp illumination but obtained a densed nanostructure. Moreover, there is a photoluminescence phenomenon while MACE etching was under darkroom etching and the illumination of luminescence lamp.
關鍵字(中) ★ 多孔矽
★ 金屬輔助化學蝕刻
★ 光致發光
關鍵字(英)
論文目次 摘要………………………………………………………………………………………………?
Abstract…………………………………………………………………………………………?
誌謝………………………………………………………………………………………………?
目錄……………………………………………………………………………………………...?
圖目錄…………………………………………………………………………………………..?
表目錄…………………………………………………………………………………………..?
第一章 緒論………………………………………………………………………………….1
1-1前言……………………………………………………………………………………..1
1-2研究目的………………………………………………………………………………2
第二章 原理與文獻回顧……………………………………………………………….3
2-1多孔矽……………………………………………………………………………….…3
2-1-1多孔矽的發現……………………………………………………………..3
2-1-2多孔矽理論模型………………………………………………………….4
2-1-2-1貝爾模型(The Beale Model) ………………………………..4
2-1-2-2擴散限制模型(The Diffusion-Limited Model) ………5
2-1-2-3量子模型(The Quantum Model) …………………………..5
2-1-3以電化學方式進行的多孔矽形成機制……………………….6
2-2金屬輔助化學蝕刻法(Metal-assisted Chemical Etching,
MACE)………………………………………………………………….……………..8
2-3用HF/CuCl2進行銅顆粒沉積,以進行MACE產生多孔
矽……………………………………………………………………………………....10
第三章 實驗步驟及方法……………………………………………………………..14
3-1實驗流程……………………………………………………………………………..14
3-2實驗耗材與藥品………………………………………………………………….15
3-3實驗器具……………………………………………………………………………..16
3-4實驗分析……………………………………………………………………………..17
3-4-1場發射掃描式電子顯微鏡…………………………………………17
3-4-2穿透式電子顯微鏡…………………………………………………….18
3-4-3光致螢光光譜………………………………………………………….…19
3-5實驗步驟……………………………………………………………………………..20
3-5-1試片的裁切與清洗…………………………………………………….20
3-5-2試片表面沉積銅粒子…………………………………………………20
3-5-3 MACE蝕刻出奈米結構………………………………………………21
第四章 結果與討論………………………………………………………………………24
4-1不同沉積時間對銅顆粒形貌之影響………………………………….24
4-2在不同環境下蝕刻對光致發光現象及奈米結構形貌之影
響…………………………………………………………………………………………28
4-2-1在暗室中進行MACE蝕刻..……………………………………….28
4-2-2在日光燈照射下進行MACE蝕刻..……………….………….29
4-2-3在紫外燈照射下進行MACE蝕刻..…………………………..30
4-3光致發光光譜檢測……………………………………………………………..48
4-4 MACE蝕刻原理…………………………………………………………………..53
第五章 結論………………………………………………………………………………..54
參考文獻……………………………………………………………………………………….55
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指導教授 李天錫 審核日期 2018-7-23
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