垂直式有機發光電晶體之面板設計與程式控制

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李昆展(Kun-Chan Li) 查詢紙本館藏

畢業系所

光電科學與工程學系

論文名稱

垂直式有機發光電晶體之面板設計與程式控制
(Study of the Panel Design and Program Control on Vertical Organic Light-emitting Transistors)

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摘要(中)

在顯示技術中，主動式矩陣有機發光二極體(Active matrix organic light-emitting diode, AMOLED)顯示器適合發展大尺寸的高解析度、低驅動電壓反應速度快的顯示器，因此成為現今技術主流。
本論文以製作垂直式有機發光電晶體(Vertical organic light-emitting transistors, VOLETs)陣列為目標，以傅立葉紅外線光譜儀(Fourier transform infrared spectroscopy ,FTIR)量測經不同表面預處理的表面鍵結，應用在膠體微影技術上以優化奈米球吸附在高介電常數的超薄介電層表面上，獲得大面積且高均勻性的單層奈米球膜遮罩，以此球膜遮罩得到高孔洞覆蓋率的開孔阻擋層/金屬源極，此開孔金屬源極為製作垂直式有機電晶體的重要需求。
最後設計及初步製作面板陣列，以 Arduino 對有機發光二極體顯示面板進行控制並成功演示指定圖案。

摘要(英)

Nowadays, active matrix organic light-emitting diode (AMOLED) is a mainstream technology for displays, it is suitable for the development of large-size, high-resolution, reaction speed fast and low drive voltage displays.
To achieve the study objectives that fabricate the vertical organic light-emitting transistors (VOLETs) array, analyzing surface bonding with different surface pretreatment by Fourier transform infrared spectroscopy (FTIR) to improve colloidal lithography on ultra-thin high-k dielectric layer to prepare large area, highly uniform nanospheres monolayer as the evaporation mask, the patterned blocking/metal source with high perforations coverage was obtained. It’s an important requirement for fabricating vertical organic transistors.
Finally, designed and preliminary fabricated the organic light-emitting diode display panel, then control to image display by Arduino.

關鍵字(中)

★ 垂直式有機發光電晶體
★ 面板設計
★ 程式控制
★ 高介電常數介電層
★ 膠體微影

關鍵字(英)

★ Vertical Organic Light-emitting Transistors
★ Panel Design
★ Program Control
★ High-k Dielectric Layer
★ Colloidal Lithography

論文目次

摘要 i
Abstract ii
誌謝 iii
目錄 iv
圖目錄 viii
第一章緒論 1
1.1 前言 1
1.1.1 傳統有機薄膜電晶體 4
1.1.2 蕭特基基底垂直式電晶體 6
1.1.3 有機發光二極體 11
1.1.4 有機發光二極體顯示器 13
1.1.5 研究目的與動機 15
第二章基本理論 17
2.1 膠體微影技術 17
2.1.1 無序排列自組裝之單層奈米球膜遮罩 18
2.1.2 界面活性劑之吸附運用 21
2.2 垂直式有機電晶體之工作機制 23
2.2.1 關狀態之工作機制 25
2.2.2 開狀態之工作機制 28
2.2.3 轉移特性曲線與開關電流比 32
2.3 有機發光二極體之工作機制 34
2.3.1 載子注入機制 36
2.3.2 載子傳輸機制 38
2.3.3 能量轉移機制 39
2.3.4 主客體放光機制 42
第三章實驗方法與架構 44
3.1 實驗架構及材料介紹 44
3.1.1 介電層材料 45
3.1.2 主動層材料 46
3.1.3 界面活性劑之奈米球吸附 48
3.1.4 金屬電極材料與能階 49
3.2 實驗儀器 50
3.2.1 手套箱(Glove Box) 50
3.2.2 熱蒸鍍機(Thermal Evaporation Coater) 51
3.2.3 原子層沉積(Atomic Layer Deposition, ALD) 52
3.2.4 旋轉塗佈機(Spin Coater) 53
3.2.5 阻抗分析儀 (LF Impedance Analyzer) 53
3.2.5 紫外光臭氧清洗機(UV-Ozone) 54
3.2.6 半導體參數分析儀(Semiconductor Parameter Analyzer, SPA) 55
3.2.7 場發射掃描式電子顯微鏡(Field-Emission Scanning Electron Microscopy, FE-SEM) 56
3.2.8 手動光罩接合對準器(Mask and Bond Aligner) 58
3.2.9 傅立葉轉換紅外線光譜儀(Fourier Transform Infrared Spectroscopy, FTIR) 59
3.2.10 Arduino 61
3.3 實驗方法與製備 63
3.3.1 垂直式有機電晶體元件製程 63
3.3.2 氧化銦錫導電玻璃圖案化 68
3.3.3 倒置結構有機發光二極體之陣列製程 71
第四章實驗結果與討論 74
4.1 垂直式有機電晶體之開孔源極 74
4.1.1 介電層表面處理對於奈米球膜成長的影響 75
4.1.2 吸附奈米球與開孔源極 80
4.1.3 奈米級開孔源極結構之總結 86
4.2 垂直式有機電晶體之電性探討 87
4.2.1 高功函數金源極之垂直式有機電晶體 88
4.2.2 金源極上阻擋層之關電流密度抑制 89
4.2.3 垂直式有機電晶體之電性總結 91
4.3 面板設計與製作 92
4.3.1 氧化銦錫閘極之圖案化定義 92
4.3.2 金屬源極之光罩設計 95
4.3.3 光阻堤防層(Bank layer)之光罩設計 96
4.3.4 陣列製作測試 97
4.3.5 面板初步製作與設計之總結 100
4.4 矩陣面板之程式控制 101
4.4.1 程式碼編寫與測試 102
4.4.2 被動式矩陣面板之圖像顯示 107
4.4.3 矩陣面板之控制總結 108
第五章結論與未來展望 109
參考文獻 112

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指導教授

張瑞芬(Jui-Fen Chang)

審核日期

2019-1-24

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