覆晶式Ka頻段超外差發射機前端電路之研製

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姓名

白禮智(Li-Chih Pai) 查詢紙本館藏

畢業系所

通訊工程學系

論文名稱

覆晶式Ka頻段超外差發射機前端電路之研製
(Implementation of Flip-Chip Superheterodyne Transmitter Front-End Circuits for Ka Band Applications)

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摘要(中)

本論文主要研究內容為毫米波覆晶式射頻前端發射機電路設計，電路應用的系統為Ka頻段的區域多點分散式服務系統（local multipoint distribution service）。利用WIN 0.15μm pHEMT製程研製，包含共面波導功率放大器、寬頻功率放大器、次諧波二極體混頻器以及次諧波電阻性混頻器設計。
電路經量測，共面波導功率放大器的增益為14.5 dB，輸入輸出返回損耗分別為8dB與5.4dB，1dB壓縮點輸出功率與附加功率效率為20.4 dBm與 14.1 %，最大輸出功率與功率效率增益為22.3 dBm與 19.3 %；寬頻功率放大器頻寬為19GHz至31GHz，在頻率為27.1GHz時，增益為21.6 dB，輸入輸出返回損耗分別為10dB與4dB，1 dB壓縮點輸出功率與附加功率效率為21dBm與 18.6 %，最大輸出功率與功率效率增益為23.1 dBm與 21.9 %；次諧波二極體混頻器的轉換損耗（conversion loss）在昇頻模式中為10.5dB，輸入1dB壓縮點-3dBm；而在降頻模式中為11.1dB，輸入1dB壓縮點為1dBm；在昇頻模式中，LO-RF隔離度在所操作的頻段中皆大於19dB，而IF-RF隔離度則大於13dB；在降頻模式中，LO-IF隔離度在所操作頻段皆大於14dB，RF-IF隔離度則大於38dB；次諧波電阻性混頻器的轉換損耗為10.4dB，輸入1dB壓縮點1dBm，LO-RF隔離度在所操作的頻段中皆大於30dB，而IF-RF隔離度則大於16dB。

摘要(英)

Millimeter-wave flip-chip RF front-end transmitter circuits design are the main
research of this thesis, which apply to Ka band local multipoint distribution
service(LMDS). These Ka band circuits are implemented with WIN 0.15μm pHEMT,
including coplanar waveguide power amplifier, broadband power amplifier,
sub-harmonic diode and resistive mixer designs.
The measured results of the circuit are illustrated as follows; for the coplanar
waveguide power amplifier , gain is 14.5 dB, input and output return loss are 8dB and
5.4dB, the output power and power added efficiency at the 1-dB gain compression
point are 20.4dBm and 14.1%, the maximum output power and power added
efficiency are 22.3dBm and 19.3% ; for the broadband power amplifier , bandwidth is
19GHz to 31GHz, gain is 21.6 dB at 27.1GHz, input and output return loss are 10dB
and 4dB, the output power and power added efficiency at the 1-dB gain compression
point are 21dBm and 18.6%, the maximum output power and power added efficiency
are 21.3dBm and 21.9%; for the sub-harmonic diode mixer, operating at up-converter,
the conversion loss is 10.5dB, input power at the 1-dB gain compression point is
-3dBm; operating at down-converter, the conversion loss is 11.1dB, input power at the
1-dB gain compression point is 1dBm; the LO-RF and IF-RF isolation are greater than
19dB and 13dB at up-converter operation, the LO-IF and RF-IF isolation are greater
than 14dB and 38dB at down-converter operation; for the sub-harmonic resistive
mixer, the conversion loss is 10.4 dB, input power at the 1-dB gain compression point
is 1dBm, the LO-RF and IF-RF isolation are greater than 30dB and 16dB

關鍵字(中)

★ 毫米波發射機
★ 次諧波混頻器
★ 功率放大器

關鍵字(英)

★ subharmonic mixer
★ millimeter-wave transmitter
★ power amplifier

論文目次

第一章緒論 1
1-1 研究動機 1
1-2 研究成果 2
1-3 章節簡述 2
第二章共面波導及覆晶技術介紹 3
2-1 前言 3
2-2 共面波導簡介 3
2-2-1 一般共面波導 4
2-2-2 背板金屬共面波導 6
2-2-3 有限接地金屬共面波導 8
2-3 覆晶組裝技術簡介 12
2-3-1 覆晶凸塊設計與製作 13
2-3-2覆晶載具設計 14
第三章毫米波Ka頻段功率放大器設計 16
3-1 區域多點分散式服務系統簡介 16
3-2 GaAs pHEMT製程技術簡介 18
3-3 功率放大器簡介 19
3-3-1 31GHz共面波導功率放大器 20
3-3-2 電路架構及原理 21
3-3-3 設計流程 22
3-3-4 量測結果 23
3-3-5 結果討論 27
3-4 寬頻放大器 28
3-4-1 寬頻功率放大器 30
3-4-2 電路架構及原理 32
3-4-3 量測結果 35
3-3-4 結果討論 39
3-5 覆晶式共面波導功率放大器 39
3-5-1 電路架構及原理 39
3-5-2模擬結果 40
3-5-3 結果討論 44
第四章毫米波Ka頻段次諧波混頻器設計 45
4-1混頻器簡介 45
4-1-1 混頻器分析 46
4-2二極體混頻器 48
4-2-1二極體平衡式混頻器 51
4-2-2次諧波二極體混頻器 56
4-2-3 電路架構及原理 57
4-2-4設計流程 58
4-2-5 量測結果 59
4-2-6 結果討論 66
4-3 場效電晶體電阻性混頻器 67
4-3-1 次諧波電阻性混頻器 68
4-3-2電路架構及原理 71
4-3-3設計流程 73
4-3-4量測結果 75
4-3-5 結果討論 79
4-4 覆晶式次諧波電阻性混波器 80
4-4-1 電路架構及原理 80
4-4-2模擬結果 81
4-4-3結果討論 84
第五章結論 85
參考文獻 87

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指導教授

邱煥凱(Hwann-Kaeo Chiou)

審核日期

2005-7-20

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