深冷電化學矽晶表面以產生奈米晶之研究

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姓名

呂承穎(Cheng-Ying Lu) 查詢紙本館藏

畢業系所

機械工程學系

論文名稱

深冷電化學矽晶表面以產生奈米晶之研究
(Fabrication of Nanocrystal by Cryogenic Electrochemical Anodic Etching on Silicon Substrate)

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摘要(中)

本研究為在重摻本研究為在重摻本研究為在重摻 P型矽晶圓上進行型矽晶圓上進行型矽晶圓上進行深冷電化學蝕刻深冷電化學蝕刻深冷電化學蝕刻，輔以雷射光，輔以雷射光照，觀察低溫狀態對其變化影響。因矽晶片載子遷移率矽晶片載子遷移率矽晶片載子遷移率在室溫約為 120 (cm2/V•s)、-20 ℃時為 108(108(108(108(cm2/V•s)，隨著溫度下降遷移率也之隨著溫度下降遷移率也之隨著溫度下降遷移率也之隨著溫度下降遷移率也之減少。因此本實驗設計於室溫於室溫 (25 ℃)、-20 ℃(乾冰 )環境下進行環境下進行，使用掃描式電子顯微鏡用掃描式電子顯微鏡用掃描式電子顯微鏡用掃描式電子顯微鏡 (SEM)與穿透式電子顯微鏡與穿透式電子顯微鏡與穿透式電子顯微鏡 (TEM) 觀察其多孔觀察其多孔矽結構及晶格變化晶格變化，並使用光激發譜儀並使用光激發譜儀並使用光激發譜儀並使用光激發譜儀 (PL)分析其特性。經實驗分析其特性。經實驗分析其特性。經實驗發現溫度越低其奈米晶粒小，發現溫度越低其奈米晶粒小，發現溫度越低其奈米晶粒小，發現溫度越低其奈米晶粒小，發現溫度越低其奈米晶粒小，電化學蝕刻後光譜電化學蝕刻後光譜電化學蝕刻後光譜電化學蝕刻後光譜也有藍移的現象產也有藍移的現象產也有藍移的現象產也有藍移的現象產生

摘要(英)

In this study, we perform cryogenic laser-assisted electrochemical etching on heavily doped p-type silicon wafer, and observe the influence of low temperature. Since the carrier mobility of silicon wafer is about 120(cm2/V•s) at room temperature, 108(cm2/V•s) at -20℃, the mobility reduces while temperature decrease. Therefore, the etching experiments are performing at room temperature(25℃),-20℃(dry ice), and using scanning electron microscope(SEM), transmission electron microscope(TEM) and photoluminescence(PL) to observe the structure and characteristics of porous silicon. We find that the lower the temperature, the smaller the nanocrystals grain, and the phenomenon of blue-shift is shown in the result of PL.

關鍵字(中)

★ 電化學蝕刻
★ 多孔矽
★ 奈米晶粒
★ 光致發光

關鍵字(英)

論文目次

目錄
摘要 ....................................................... i
Abstract ................................................... ii
誌謝 ...................................................... iii
目錄 ...................................................... iv
圖目錄 ................................................... vii
表目錄 .................................................... xi
第一章緒論 ................................ ................ 1
1-1 研究背景 ................................ ............. 1
1-2 多孔矽製程多孔矽製程 ................................ ........... 3
1-2-1 乾式蝕刻法 ....................................... 3
1-2-2 濕式蝕刻法 ....................................... 4
1-2-3 電化學蝕刻法 ..................................... 5
1-3 多孔矽應用 ........................................... 6
1-4 研究動機與目的 ....................................... 8
第二章原理與文獻回顧原理與文獻回顧原理與文獻回顧 ................................ ..... 10
2-1 多孔矽理論模型多孔矽理論模型多孔矽理論模型 ................................ ...... 10
2-1-1 量子模型量子模型 ................................ ........ 10
v
2-1-2 擴散限制模型 .................................... 11
2-1-3 貝爾模型 ........................................ 12
2-2 多孔矽形成機制 ................................ ...... 13
2-3 多孔矽電化學蝕刻流多孔矽電化學蝕刻流多孔矽電化學蝕刻流多孔矽電化學蝕刻流 -電壓 (I-V)特性曲線 ............... 15
2-4 光電效應 ................................ ............ 17
第三章實驗方法與步驟實驗方法與步驟實驗方法與步驟 ................................ ..... 18
3-1 試片與清洗流程試片與清洗流程試片與清洗流程 ................................ ...... 18
3-2 實驗器材 ................................ ............ 20
3-2-1 雷射光源、偏振片功率計雷射光源、偏振片功率計雷射光源、偏振片功率計雷射光源、偏振片功率計雷射光源、偏振片功率計 .................... 20
3-2-2 電化學實驗器材電化學實驗器材 ................................ .. 22
3-2-3 實驗分析製備及檢測儀器實驗分析製備及檢測儀器實驗分析製備及檢測儀器實驗分析製備及檢測儀器 .......................... 23
3-3 實驗步驟 ................................ ............ 25
3-3-1 常溫光電化學蝕刻常溫光電化學蝕刻常溫光電化學蝕刻 ................................ 25
3-3-2 -20 ℃光電化學蝕刻光電化學蝕刻 ............................... 27
第四章結果與討論結果與討論 ................................ ......... 29
4-1 常溫光電化學蝕刻試片常溫光電化學蝕刻試片常溫光電化學蝕刻試片常溫光電化學蝕刻試片 ................................ 29
4-1-1 日光燈下觀察及日光燈下觀察及 UV燈下觀察結果 .................. 29
4-1-2 FE-SEM觀察多孔矽表面形貌觀察多孔矽表面形貌觀察多孔矽表面形貌 ...................... 34
4-1-3 FE-SEM觀察多孔矽剖面形貌觀察多孔矽剖面形貌觀察多孔矽剖面形貌 ...................... 37
vi
4-2 -20 ℃光電化學蝕刻試片光電化學蝕刻試片光電化學蝕刻試片 ............................... 40
4-2-1 日光燈下觀察及日光燈下觀察及 UV燈下觀察結果 .................. 40
4-2-2 FE-SEM觀察多孔矽表面形貌觀察多孔矽表面形貌觀察多孔矽表面形貌 ...................... 45
4-2-3 FE-SEM觀察多孔矽剖面形貌觀察多孔矽剖面形貌觀察多孔矽剖面形貌 ...................... 48
4-3 蝕刻深度與速率蝕刻深度與速率蝕刻深度與速率 ................................ ...... 53
4-4 奈米晶粒 ................................ ............ 55
4-5 多孔矽之光激發光譜 .................................. 57
第五章結論 ................................ ............... 60
第六章參考文獻 ........................................... 61

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指導教授

李天錫

審核日期

2019-7-4

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