不同cusp磁場比例與晶體坩堝旋轉條件對於柴氏生長5吋單晶矽之熱流場及氧雜質傳輸的影響

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姓名

林佑怡(Zumrotul Ida) 查詢紙本館藏

畢業系所

機械工程學系

論文名稱

不同cusp磁場比例與晶體坩堝旋轉條件對於柴氏生長5吋單晶矽之熱流場及氧雜質傳輸的影響
(Effects of different unbalanced cusp-magnetic ratios and crucible rotation conditions on heat and oxygen transport during the Czochralski growth of 5-inch-diameter silicon crystal)

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至系統瀏覽論文 (2024-8-16以後開放)

摘要(中)

此數值模擬進行了一系列，以不同cusp磁場比例與晶體 - 坩堝旋轉條件，探討Czochralski長晶過程中對流場，溫度和氧輸送的影響。對於5英吋晶體尺寸的生長進行軸對稱2D模擬。在cusp磁場（CMF）的不同磁比（MR）下，以四種不同的晶體和坩堝旋轉條件比較10mm長的晶體生長。
數值結果說明，在不同的cusp磁場比例下，固液界面的氧含量受到不同晶體和坩堝旋轉條件產生的熔體流動顯著影響。固液界面的氧含量在低反向和同向旋轉下濃度增加，高反向和同向旋轉配合氧濃度隨著MR增加而降低。通過在低坩堝旋轉情況下使用反向旋轉條件，可以獲得沿c-m界面的低氧含量。由於矽熔體中的流動和熱場影響，高坩堝旋轉情況下的氧濃度具有兩種不同的趨勢。底壁附近的高速流動導致氧原子沿坩堝側壁移動得更快，並在自由熔化表面上蒸發得更多。

摘要(英)

A series of numerical simulation has been performed to clarify the effects of different cusp-magnetic ratios on the flow, temperature, and oxygen transport under different combinations of crystal-crucible rotation conditions during the Czochralski growth process. The axi-symmetric 2D global simulations were conducted for the growth of 5-inch silicon crystal. Four different crystal and crucible rotation conditions under different magnetic ratios (MRs) of cusp-magnetic field (CMF) were numerically compared of a 10 mm long crystal growth.
The results show that oxygen content along the crystal-melt interface is significantly affected by the melt flow motion generated by different crystal and crucible rotation conditions with different cusp-magnetic ratios. The oxygen content along crystal-melt interface increases at low crucible counter- and iso-rotation rates but decreases at high crucible counter- and iso rotation rates with increasing MRs. Low oxygen content along crystal-melt interface can be obtained by using counter-rotation condition at low crucible rotations. Oxygen concentration at high crucible rotation cases has two different tendency due to the effect of flow and thermal field in the silicon melt. Higher speed flow motion near bottom wall leads oxygen atoms to move faster along the crucible side wall and evaporates more at the free-melt surface.

關鍵字(中)

★ Crytsal-坩堝反轉
★ 氧氣運輸
★ 單晶生長
★ 提拉
★ 數值模擬

關鍵字(英)

★ Crystal-crucible counter rotation
★ oxygen transport
★ single crystal growth
★ Czochralski
★ numerical simulation

論文目次

摘要 i
Abstract ii
Table of Contents iii
List of Figures v
List of Tables viii
Nomenclature ix

Chapter 1. Introduction 1
1.1 Czochralski silicon crystal growth 1
1.2 Oxygen transportation during Czochralski process 2
1.3 Application of a Cusp-Magnetic Field (CMF) 4
1.4 Objectives 6

Chapter 2. Theoretical Formulations and Computational Methods 10
2.1 Physical model 10
2.2 Theoretical formulations 11
2.2.1 Governing equations 11
2.2.2 Turbulence flow 12
2.2.3 Boundary condition for flow fields 14
2.2.4 Boundary condition for thermal fields 15
2.2.5 Boundary condition for oxygen transport 15
2.2.6 Physical significance of the dimensionless numbers 17
2.3 Computational methods 19
2.3.1 Numerical methods 19
2.3.2 Grid and tolerance tests 20

Chapter 3. Results and Discussions 27
3.1 Effects of crucible counter- and iso-rotation rates on the flow, temperature and oxygen transport without cusp-magnetic field (CMF) 27
3.2 Effects of different MRs of CMF on the flow, temperature, and oxygen transport under crucible counter-rotations 32
3.3 Effects of different MRs of CMF on the flow, temperature, and oxygen transport under crucible iso-rotations 35
3.4 Effect of different crystal-crucible counter and iso-rotation conditions on the flow and oxygen transport at different MRs of CMF 36

Chapter 4. Conclusions and Future Works 50
4.1 Conclusions 50
4.2 Future works 51

References 52

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指導教授

陳志臣(Jyh-Chen Chen)

審核日期

2019-8-19

推文