金屬輔助電化學蝕刻法製備規則有序準直排列矽單晶奈米管陣列結構及其特性研究

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姓名

許秉洲(Ping-Chou Hsu) 查詢紙本館藏

畢業系所

化學工程與材料工程學系

論文名稱

金屬輔助電化學蝕刻法製備規則有序準直排列矽單晶奈米管陣列結構及其特性研究

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摘要(中)

在本研究中，我們報導一種在室溫下透過聚苯乙烯奈米球微影術結合金屬輔助催化蝕刻法與電化學蝕刻法的新穎製程技術，成功在(001)矽單晶基材上以一步驟、安全以及低成本的方式製備出大面積規則準直之矽單晶奈米管陣列結構，不需要額外複雜且昂貴的光照顯影設備以及技術，克服由先前文獻報導製備矽晶奈米管所遭遇到的製程問題。在此新穎製程方法中，我們首先在矽晶基材表面形成尺寸均勻且規則有序之內含奈米尖孔洞之蜂巢狀金薄膜結構作為後續催化與蝕刻位置，透過調控聚苯乙烯奈米球之尺寸與電化學蝕刻時間可以分別控制矽單晶奈米管的外徑以及長度。再經由SEM、TEM影像圖與其相對應之電子選區繞射圖譜鑑定分析可得知所製備出之矽單晶奈米管具有高度準直性且為單晶結構。而所獲得之高長寬比矽單晶奈米管因中空結構能避免孔洞間的空氣薄膜逸出，其疏水性質相較於同樣利用金屬輔助電化學蝕刻法所製備之相同尺寸矽晶奈米線更加優異。在波長範圍400-800 nm的光譜量測結果顯示，因矽單晶奈米管可視為是由奈米線與奈米洞共同組成之複合式奈米材料，相較於矽晶基材與矽單晶奈米線擁有更優異的光吸收能力。實驗結果呈現出令人興奮的前景，所提出之新穎製程技術及結構，相信對各式先進一維奈米中空半導體元件之開發將能提供製程改善之參考。

摘要(英)

In this study, we propose and demonstrate a novel and room-temperature approach combing the polystyrene nanosphere lithography, metal-assisted catalyzed etching and electrochemical etching process. This method successfully fabricates large-area and well-order arrays of vertically-aligned silicon nanotubes on (001)Si substrate. In contrast to earlier techniques, the new approach proposed in this study does not require the use of toxic chemicals, expensive facilities and metal hard masks or sacrificial templates. In this approach, a unique, hexagonally-ordered Au honeycomb consisted of nanohole patterning with uniform size and spacing was first produced on the surface of (001)Si substrate. The Au honeycomb used as the catalyst and the nanohole used as initial pits to etch vertically downward into the Si substrate by Au-catalyzed chemical etching and electrochemical etching respectively. The outer diameter and the length of silicon nanotubes are modulated by controlling the size of the polystyrene nanosphere and the etching time. From SEM, TEM and SAED analysis indicated the silicon nanotubes are highly collimated and single crystalline. Comparing with the flat Si substrate and the Si nanowire samples, the H-terminated hydrophobic Si nanotubes with open-ended and uncovered hollow interiors that fabricated in this study can prevent the air from escaping from the structures and exhibit higher water contact angles. The visible light band spectroscopic measurement revealed that the silicon nanotubes considered as a hole-in-wire structure exhibited excellent light absorption characteristics compared to silicon nanowires. The field emission measurement results show that the turn-on field was 7.22 V μm-1, owing to their thick wall. To achieve the excellent electronic field emission devices, there are many aspects that need to be overcome and improved. The obtained results present the exciting prospects that the new approach proposed here can be extended to the design and fabrication of various 1-D hollow semiconductor nanodevices with multi-function.

關鍵字(中)

★ 奈米球微影術
★ 金屬輔助電化學蝕刻法
★ 矽單晶奈米管

關鍵字(英)

★ Nanosphere lithography
★ Metal assisted electrochemical etching
★ Silicon nanotube

論文目次

目錄
第一章前言及文獻回顧 1
1-1 前言 1
1-2 一維矽單晶奈米管結構 2
1-2-1 一維矽單晶奈米線與奈米管之應用 2
1-2-2 一維矽單晶奈米線之製備 3
1-2-3 一維矽單晶奈米管之製備 4
1-3 電化學蝕刻技術 5
1-3-1 一維準直矽單晶微奈米孔洞之製備 5
1-3-2 電化學蝕刻多孔矽形成機制 6
1-3-3 電化學蝕刻法製備規則有序矽單晶微奈米孔洞陣列結構 10
1-3-4 電化學結合金屬催化蝕刻法製備矽單晶微奈米線陣列結構 11
1-4 水滴接觸角之相關理論 12
1-5 場發射電子元件 14
1-5-1 電子場發射相關理論 14
1-5-2一維奈米結構應用於電子場發射之研究 15
1-5-3一維矽單晶奈米結構應用於電子場發射之研究 16
1-6 研究動機及目標 16
第二章實驗步驟及實驗設備 18
2-1 規則有序且尺寸可調控之矽單晶奈米尖孔洞陣列結構 18
2-1-1 矽晶基材使用前處理 18
2-1-2 自組裝奈米球陣列模板製備 18
2-2 規則有序且準直排列之高長寬比矽單晶奈米孔洞通道陣列結構 19
2-3 規則有序且準直排列之矽單晶奈米線陣列結構 19
2-3-1 蒸鍍純金薄膜 20
2-4 規則有序且準直排列之矽單晶奈米管陣列結構 20
2-5 試片分析 21
2-5-1 掃描式電子顯微鏡 21
2-5-2 穿透式電子顯微鏡 21
2-5-3 影像式水滴接觸角量測儀 22
2-5-4 可見光光譜儀 22
2-5-5 真空電子場發射性質量測系統 23
第三章結果與討論 24
3-1 單層自組裝奈米球模板陣列製備 24
3-2 奈米球微影術結合濕式化學蝕刻法製備矽單晶奈米孔洞陣列 26
3-3 電化學蝕刻法製備矽單晶奈米孔洞通道陣列 27
3-4 奈米球微影術結合金屬輔助電化學蝕刻法製備矽單晶奈米線陣列 29
3-5 奈米球微影術結合金屬輔助電化學蝕刻法製備矽單晶奈米管陣列 30
3-6水滴接觸角量測分析 35
3-6-1 矽單晶奈米線陣列 35
3-6-2 矽單晶奈米管陣列 36
3-7 可見光光譜量測分析 36
3-8 電子場發射性質量測分析 37
第四章結論及未來展望 39
參考文獻 40
表目錄 48
圖目錄 50

參考文獻

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指導教授

鄭紹良(Shao-Liang Cheng)

審核日期

2020-8-18

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