| 姓名 |
陳治佑(Chin-Yu Chen)
查詢紙本館藏 |
畢業系所 |
光電科學與工程學系 |
| 論文名稱 |
氮化硼表面的高反射金屬電極
(Highly reflective metal contacts on boron nitride)
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| 相關論文 | |
| 檔案 |
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| 摘要(中) |
深紫外發光二極體(deep ultraviolet light-emitting diodes, DUV LEDs, 波長 ≤ 290 nm)需要高穿透、高導電的P型半導體，才能發出更多的DUV光子。目前，大多數的研究團隊都以氮化鎵(GaN)作為DUV LEDs的P型電極接觸層，但P型氮化鎵的能隙(3.4 eV)太小，會吸收深紫外光，導致LED的外部量子效率(external quantum efficiency, EQE)很難超過10%。為了解決這個問題，我們嘗試以氮化硼(boron nitride, BN)來取代氮化鎵。氮化硼具備高能隙(~ 5.9 eV)與低電洞活化能(30-300 meV)，有潛力展現高穿透、高導電的光電特性，值得應用在DUV LED。
本研究中，我們在BN磊晶層的表面，以不同的製程條件形成含鋁(Al)的金屬電極，希望能取代傳統常用的鎳/金(Ni/Au)電極，希望能降低BN表面的接觸電阻、並提升金屬/BN介面的反射率。若能達到高導電、高反射的金屬/BN介面，就能將之應用在覆晶型(flip-chip) 的DUV LED。我們發現，以Pt/Al/Ti/Au製作BN表面的電極，並以700 °C氮氣退火1分鐘，能將280 nm波段的反射率由25% (Ni/Au電極)，提升至44%，並維持相同的接觸電阻。 |
| 摘要(英) |
Deep ultraviolet light-emitting diodes (DUV LEDs, λ ≤ 290 nm) require high-transparent and high-conductive p-type semiconductor to produce sufficient photons. GaN is currently the most used p-type material for DUV LEDs because of its mature growth/fabrication process. However, since the band gap of GaN is only 3.4 eV, the severe light absorption in the p-type region usually leads to the external quantum efficiencies (EQEs) below 10 % of the device. To address the issue, we adopt boron nitride (BN) as the alternative. The large band gap (~ 5.9 eV) and small hole activation energy (30-300 meV) of BN make it a promising candidate for high transparent and high conductive p-type material in DUV LEDs.
In this study, we propose an Al-based metal contact on BN, aiming to replace the conventional Ni/Au contact. The Al layer is employed to increase the reflectance at the metal/BN interface, which is suitable for flip-chip devices. It is found that Pt/Al/Ti/Au, annealed at 700 °C in N2 for 1 min, can increase the reflectance at 280 nm from 25 % (by Ni/Au) to 44 %, without sacrificing the contact resistance. |
| 關鍵字(中) |
★ 氮化硼
★ 金屬電極
★ 接觸電阻
★ 鎂摻雜
★ 退火 |
關鍵字(英) |
★ BN
★ metal contacts
★ Contact resistance
★ Mg-doped
★ annealing |
| 論文目次 |
論文摘要......................................................................................................Ⅰ
Abstract.........................................................................................................Ⅱ
致謝..............................................................................................................Ⅲ
目錄..............................................................................................................Ⅳ
圖目錄.........................................................................................................Ⅵ
表目錄.........................................................................................................Ⅷ
第一章 緒論
1-1氮化物深紫外光LED的發展現況與技術瓶頸………….….......1
1-2 氮化硼的光電特性與LED的應用優勢.………………………..7
1-3研究動機與內容架構…………………….…………………….....8
第二章 實驗原理、方法與儀器
2-1製程步驟…………………….…………………………………...11
2-2 高真空電子束暨熱阻式蒸鍍機(E-gun&Thermal)……………..15
2-3接觸電阻與片電阻的量測原理………………...……….………17
2-4霍爾量測原理………………………….………………………...19
第三章 結果與討論
3-1 Pt/Al/Ti/Au與Ni/Al/Ti/Au電極對BN電阻值的影響………...23
3-2退火溫度對BN電阻值的影響…….…….……...….………..….29
3-3 Pt/Al/Ti/Au與Ni/Al/Ti/Au反射率比較………………...……...36
3-4 鎂摻雜的影響…………………………………………………...41
第四章 結論與未來展望
4-1結論………………………….…………………………………...44
4-2未來展望…………………………………….…………………...45
參考文獻………………………………….…………………………….46 |
| 參考文獻 |
1. The electromagnetic spectrum, Available at:
https://bestlight.io/blogs/news/92100353-what-are-ultraviolet-lights-good-for
2. Application of UVA,UVB,UVC, Available at:
https://www.idealab.rocks/en_US/wettbewerbe/leds-clean-our-water/
3. D. Liu, et al. 226nm AlGaN/AlN UV LEDs using p-type Si for hole injection and UV reflection. Appl. Phys. Lett. 113, 011111 (2018).
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6. David Arto Laleyan, et al. AlN/h-BN Heterostructures for Mg Dopant-Free Deep Ultraviolet Photonics. Nano Lett. 17, 3738−3743 (2017).
7. E-gun&Thermal, Available at: https://in.ncu.edu.tw/~osc/3_1_2.htm
8. Sheet resistance, Available at:
https://en.wikipedia.org/wiki/Sheet_resistance
9. Hall measurement, Available at:
http://ezphysics.nchu.edu.tw/prophys/basicexp/expnote/hall/hall_97Feb.pdf
10. H. K. Kim, et al. Low-resistance Pt/Pd/Au ohmic contacts to p-type AlGaN. Applied Physics Letters. 84, 1710 (2004).
11. L. C. Chen, et al. Microstructural investigation of oxidized Ni/Au ohmic contact to p-type GaN. Journal of Applied Physics. 86, 3826 (1999).
12. Y. X. Zhu, et al. Effect of different ohmic contact pattern on GaN HEMT electrical properties. Acta Phys. Sin. 63, 11 (2014).
13. X. J. Li, et al. Influence of different annealing temperature and atmosphere on the Ni/Au Ohmic contact to p-GaN. Acta Phys. Sin. 62, 20 (2013).
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15. J. K. Sheu, et al. Lin The effect of thermal annealing on the Ni/Au contact of p- type GaN. Journal of Applied Physics 83, 3172 (1998).
16. H. K. Kim, et al. Low-resistance Pt/Pd/Au ohmic contacts to p-type AlGaN. Applied Physics Letters. 84, 1710 (2004).
17. David Arto Laleyan, et al. AlN/h-BN Heterostructures for Mg Dopant-Free Deep Ultraviolet Photonics. Nano Lett. 17, 3738–3743(2017).
18. Allen J. Bard, et al. The concept of Fermi level pinning at semiconductor/liquid junctions. Consequences for energy conversion efficiency and selection of useful solution redox couples in solar devices. J. Am. Chem. 102 (11), 3671-3677(1980). |
| 指導教授 |
賴昆佑(Kun-Yu Lai)
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審核日期 |
2020-7-24 |
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