鑭金屬薄膜應用於氮化鋁鎵/氮化鎵元件之歐姆接觸特性研究

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姓名

吳季倫(Chi-Lun Wu) 查詢紙本館藏

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材料科學與工程研究所

論文名稱

鑭金屬薄膜應用於氮化鋁鎵/氮化鎵元件之歐姆接觸特性研究
(The Role of Lanthanum on Ohmic Contacts to AlGaN/GaN High Electron Mobility Transistors)

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摘要(中)

氮化鋁鎵/氮化鎵高電子遷移率電晶體 (high electron mobility transistors, HEMTs) 由於具有高載子密度與遷移率之二維電子氣 (two-dimensional electron gas, 2DEG)，因此極具潛力成為下一代高頻電子及高功率電晶體之主流材料。為了製作出高效率HEMT元件，低特徵接觸電阻 (specific contact resistance, ρc) 與良好熱穩定之歐姆接觸電極是必須達成的技術指標。此外為了與矽基功率元件競爭並降低其製作成本，開發以互補式金氧半導體 (complementary metal-oxide-semiconductor) 標準製程製造AlGaN/GaN HEMTs於矽晶圓上成為近幾年來國學研單位的研究重點。
本實驗將先探討不同鈦鋁原子比在快速熱退火處理後之電性和表面形態之影響，並研究開發加入鑭 (Lanthanum) 金屬薄膜於歐姆接觸電極中，藉由調控其他金屬層材料厚度，配合適當的退火溫度與氛圍和鑭金屬的使用下，可大幅降低特徵接觸電阻，使鈦/鋁/鑭/銅歐姆接觸可得到低特徵接觸電阻為6.4×10-6 ohm-cm2，與傳統鈦/鋁/鎳/金接觸相比為2.9×10-5 ohm-cm2。表面形態與傳統鈦/鋁/鎳/金、鈦/鋁/鎳/銅和鈦/鋁/銅歐姆接觸金屬比較，得到較為平坦之金屬表面。

摘要(英)

AlGaN/GaN high electron mobility transistors (HEMTs) have been considered as a promising candidate for radio frequency/microwave and power electronics applications because of its high mobility and density of two-dimensional electron gas (2DEG) at the hetero-interface. In order to fabricate high efficiency HEMT devices, ohmic contacts with low specific contact resistance and high thermal stability are necessary. In order to compete with Si-based power devices and lower manufacturing cost, it is desired for AlGaN/GaN HEMTs fabricated on Si wafers with standard CMOS processes. Therefore, Au-free ohmic contacts have recently drawn considerable attention.
In this experiment, we first investigate the influence of different Ti/Al atomic ratios on specific contact resistance and surface morphology after thermal annealing and develop using Lanthanum thin film in ohmic contact. By optimizing the thickness of other metal layers and annealing temperature and the thickness of Lanthanum, we can obtain a low specific contact resistance of 6.4×10-6 ohm-cm2 by using Ti/Al/La/Cu ohmic contacts comparing to 2.9×10-5 ohm-cm2 by using Ti/Al/Ni/Au ohmic contacts. The surface morphology is compared with traditional Ti/Al/Ni/Au, Ti/Al/Ni/Cu and Ti/Al/Cu ohmic contacts, we can acquire a much smoother surface.

關鍵字(中)

★ 氮化鋁鎵/氮化鎵異質結構
★ 歐姆接觸
★ 特徵接觸電阻
★ 高電子遷移率電晶體
★ 二維電子氣

關鍵字(英)

★ AlGaN/GaN heterostructures
★ ohmic contacts
★ specific contact resistance
★ high electron mobility transistors
★ two-dimensional electron gas

論文目次

摘要 i
Abstract ii
致謝 iii
目錄 iv
圖目錄 vi
表目錄 ix
第一章緒論 1
1.1前言 1
1.2 研究背景 4
第二章基礎理論及文獻回顧 5
2.1 金屬半導體接觸理論 5
2.1.1 整流接觸 (Rectified contact) 6
2.1.2 非整流接觸 (Non-rectified contact) 8
2.2 傳輸線模型原理 10
2.3　n型氮化鎵 (n-type GaN) 之發展 16
2.4 氮化鋁鎵/氮化鎵異質結構 (AlGaN/GaN heterostructures) 的歐姆接觸發展 23
2.4.1 氮化鋁鎵/氮化鎵高電子遷移率電晶體之歐姆接觸金屬種類 (Category of ohmic contact metals on AlGaN/GaN HEMTs) 23
2.4.2 凹槽式氮化鋁鎵/氮化鎵高電子遷移率電晶體 (Recessed AlGaN/GaN HEMTs) 37
第三章研究方法與步驟 40
特徵接觸電阻量測與測試結構製備 40
實驗流程 40
氮化鋁鎵/氮化鎵高電子遷移率電晶體晶片結構 41
利用微影製程與電子束蒸鍍製作CTLM電極量測結構 41
特性分析 44
第四章結果與討論 45
4.1 快速熱退火處理對Ti/Al雙層接觸結構之影響 45
4.1.1 鈦鋁原子比對Ti/Al接觸結構表面形態之影響 45
4.1.2 鈦鋁原子比對Ti/Al接觸結構特徵接觸電阻之影響 49
4.2 快速熱退火處理對Ti/Al/Cu接觸結構之影響 50
4.3 快速熱退火處理對Ti/Al/La/Cu接觸結構之影響 55
4.3.1 鑭金屬厚度對特徵接觸電阻之影響 55
4.3.2 Ti/Al/La/Cu接觸在快速熱退火處理後表面形態之影響 56
4.3.3 Ti/Al/La/Cu接觸在快速熱退火處理後特徵接觸電阻之影響 58
第五章結論 60
參考文獻 61

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指導教授

陳一塵(I-Chen Chen)

審核日期

2020-8-20

推文